_KEC SEMICONDUCTOR 2N5401S KOREA ELECTRONICS €O.LTD. TECHNICAL DATA IAL PLANAR PNP TRANSIS GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES + High Collector Breakdwon Voltage Venor=160V, Vero=-150V r + Low Leakage Current solos Teyo-B0NA(Max.) @Veu=-120V oe Saturation Voltage { Veri=-O5V(Max,) @k=-50mA, + Low Noise : NF=8dB (Max.) MAXIMUM RATINGS CI 1 ers CHARA RATING | UNIT 5 Suen Collector-Base Voltage wo |v Collector-Emitter Voltage Vewo ~150 Vv SOT-23 Emitter-Base Voltage Viuo v Colleetor Current k 600 ma Marking Base Current A “100 | mal Collector Power Dissipation | Pe 30 | mW type Name || Junction Temperature Ty 150 v Storage Temperature Range 55~150 v 1998. 6. Revision No 1 KEC 22N5401S ELECTRICAL CHARACTERISTICS (Ta25 CHARACTERISTIC SYMBOL TEST CONDITION wan. | Typ. | Max. | UNIT Ves-120V, =O 0 | nA Collector Cut-off Current Jew fe, Pa=100 0 | HA Emitter Cut-off Current vo | Vine-3V, k=0 | na Collector Base 5 awl. | Breakdown Voltage Vise 10 \ Collector-Emitter = = ; re Brealelown Voltage Vawern | e--ImA, v0 150 V Emitter-Base Breakdown Voltage Vien _|- | % te(l) | Veu=-5V, ke=-1ma 0 DC Current Gain +] tw | Vee=-9V, e=10ma © 240 ee 50 Collector-Emitter + |_Nettaol [Her-10ma,_he-ImA 02 Saturation Voltage 5 5] “ “ Veriai® 5mA 05 Base-Emitter 2 | Vem Io==1ma 10 saturation Voltage 5 V . Vitiae® 5mA 10 Transition Frequency fr mA, f=100ME2 | 100 300 | Miz Collector Output Capacitance Ca fe=0, f-IMHez 6 | ot Small-Signal Current Gain hi Ima, Ikllz 10 200 DHA Noise Figure NE Coren terete 8 | ap Pulse Test ? Pulse Width =300S, Duty 1908, 6.15 Revision No #1 KEC 22