MARKING SCHEME: PHYSICS(042) Code: 55/1/2 Q.No. VALUE POINTS/EXPECTED ANSWERS Marks | Total Marks SECTION -A 1 (b) Decreases in both A and B. 1 1 2. x z © «, dt 3. [war T I 4, | Since no option is correct award I mark even if student does not attempt. T T 3. (d) 95 nm 1 1 6. (c) Number of protons in nucleus. z i a (c) 1 1 Vv t (a) repelled by boih the poles T T .. (c) 0.19 V 1 1 10. | (b) it becomes a p-type semiconductor T T 11. (d) 0.01 eV 1 : 12. (a) 1 a: Ya A 13. | Since no option is correct award I mark even if student does not attempt. T T 14, (c) 1 1 7 5 F i 7 oF 16. (a) Both Assertion (A) and Reason (R) are true and reason (R) is the correct 7 iz explanation of the Assertion (A). 17, (b) Both Assertion (A) and Reason (R) are true, but reason (R) is not the 1 1 Z@LLEGEw,correct explanation of the Assertion (A). 18, (@ Assertion (A) is false and Reason (R) is also false. SECTION-B 19, ‘ormation of potential barrier The diffusion current due to concentration gradient at the junction forms a space charge region consisting of immobile charge carriers. Due to this an electric field is generated at the junction giving rise to drift current in a direction opposite to diffusion current. The potential at which diffusion current becomes equal to drift current is called potential barrier. 20. @ Difference between intrinsic and extrinsic semiconductor 2 Intrinsic semiconductor Extrinsic semiconductor T. Pure semiconductor. Semiconductor is Doped with impurities. 2, Low conductivity atroom | High conductivity at room temperature. temperature, 3.ne= Mh Te # Mh (Any one) Note: Give full credit ifa student writes any other relevant correct answer. OR (b) Circuit diagram for forward and reverse biased p-n junction diode Kt \V-l characteristic (Forward and Reverse bias) Kew Ly, —_ Forward Bias Reverse Bias TL “eK Z@LLEGEw,Characteristics of silicon Diode wee 21 Calculation of acceleration of alpha particle 2 =4(0B) = qQx10Fx(0.4+0.37)N (0.9x10R)N ma= 4(0.9x10° ON F F £0,.9x10°h)ms* = 4.8 107 x0.9 x10° & ms? = 4.32 x 10? & ms? Note: Deduct 4 mark if'a student does not mention the direction of acceleration. 22, a) Mentioning direction of electric field and magnetic field vectors 1 b) Finding ratio of energy densities i a) Electric field vector and magnetic field veetor are along y-axis and 2 or vice versa. Bee ee Uy Note: Award full credit of 1 mark even if'a student finds ratio by taking us and up as equal. Z@LLEGEw,23, @ Ray diagram 7 Proof of Snell’s law of refraction i AB is incident wave front, incident at an angle i. Let rbe time taken by the ‘wavefront to travel distance BC. BC= vi t where vi is speed of wave in medium 1. To determine shape of refracted wave front, we draw a sphere of radius, v2 T, where v2 is speed of wave in medium 2. CE represents a tangent drawn from point C on sphere, CE is the refracted wave front, oC Ive AC AC sinr= 4B St AC AC sini oo i -f. sin ‘Note: Give full credit if student derives Snell’s law by taking incident wavefront in denser medium. Incident wavefront Retracted wavetront Z@LLEGEw,o oR Reason for preferring reflecting type telescope over refracting telescope Kt Justification wt 1 No Chromatic Aberration - No refraction in mirrors 2 No Spherical Aberration - Due to use of parabolic reflector 3. Easy mechanical support required - Mirrors weigh less and can be supported over entire back surface. 4 High resolving power ~ Due to Mirror with large diameter are better. | +1 5 Brighter image ~ Large mirrors gather more light waves (Any two) 2 m4 Calculation of radius of curvature 2 % % s 2 us) @ % ae OR 1 + =0.25m=25 em 4 : 2 3 Calculation of wave length of second Tine of Lyman series z tea 4 207 af For second line of Lyman series = 1, m=3 % Fat aao| tL a F =1.to'|1-+ 9 =1ixtox8 9 Z@LLEGEw,88 S10 : A= 2x10 m a8 = 1.023 x107%m ' = 103A a 2 SECTION-C 36. yay Energy level diagram for hydrogen atom 1% ‘Transitions corresponding to ultraviolet region, visible region and infrared region Yt th “a Wy % 4 es % Note: Award 1 % mark for energy level diagram ifa student does not show the transitions. OR ») Diagram to show variation i ‘Two features of diagram Ath Reason for nuclear fusi 1 1 Mays mumter (Note: Award full credit even if student does not mark so many elements and does not mention the values of Evo.) Features of diagram (any two) 1. Binding energy per nucleon is practically independent of atomic number for nuclei of middle mass number (30 170) ‘Two lighter nuclei fuse together to form heavier nuclei as the binding energy per nucleon of fused heavier nuclei is more than the binding energy per nucleon of the lighter nuclei. Thus the final system is more tightly bound than initial system. Alternatively To attain the stability wee 27. Calculation of wave length of incident light 3 4, =3315A Koa = 1.25 eV = 1.251.610 7 =2x10"S =0.2x10%F he Work function = 4, = © %, a 6.6310 x 310° 3315x10" Using hv= 9, + Kyu 0.6107 J he b, + Ky (0.6% 10" + 0.210") 0.81087 phe _ 6.63 x10 3x10 08x10" = 24,86 x10 m = 2486 x10! m= 2486 A 28, a) Calculation of Voltage 1 b) Calculation of current 1 ©) Calculation of average power 1 Np =650, Ne= 25 ,Vp =240V, Ip =1.5A Z@LLEGEw,29. [fay Difference between resistance and impedance 1 Obtaining expression for impedance 2 1, Resistance is the opposition offered to both altemating current and direct 2. Resistance is independent of frequency of source while impedance depends on frequency. 3, Resistance is opposition offered by material of the conductor while impedance is combined opposition offered by different electrical components such as resistor, inductor or capacitor. (Any One) (Note: Give credit of this part if a student writes any other correct answer.) inR , Ve= im Xe» Vi-= inXt, Peak value of current in the circuit, ViaVgt VemVoy (Vm)P= Vr? + (Vo Vi in)? + (iaXe ~inX? current while impedance is the opposition offered to altemating current only. % 10 Z@LLEGEw,= im [R? + (Xe— XL] ¥, im = SE where Z= [+E -%0)" _ impedance OR (b) Finding condition for resonance T Factors affecting resonant frequency r Graph 1 Ze YR +(X,-4y For maximum current, Z should be minimum therefore to minimize Z. X= Xe Alternatively XL= Xe ov= 1 oC i Resonant Frequency depends on value of Inductance and Capacitance “th 1) Calculation of electrostatic energy stored by the capacitor 1 b) Calculation of electrostatic energy stored by system 2 C= 100 pF =100x10°°F, | =i au= tev? 2 ul Z@LLEGEw,1 = 5 x100%10 (12? 7 (12) abate ad 2 =72x10*J=7.2mI Lae 100 uF cv 100x10° x12 2x104C ye 2 . (asoy 2C, — 2x200x10* 144 = x10" a = 36x10°S =3.6mJ SECTION-D 31 @ i) Statement of Biot-Savar’s law 1 Expression for magnetic field 2 Diagram for magnetic field lines % ii) Finding current by revolving electron 1% @ ‘The magnetic field at a point due to a current carrying element is proportional to magnitude of current, element length and inversely proportional to the square of the distance from the element. According to Biot-Savart’s law 12 Z@LLEGEw,Bi, ddlsin 4a At point A ld la = 90" sin 90° = i (a Hence aB= 4x Magnetic field at centre pe fas | HM Be ex A x2 an a pe Ml 2a Note: Give full eredit of 2 marks if'a student derives the expression for ‘magnetic field at the axis of the loop and then puts distance of point as 0 from the centre. i) it T w 2ar a 2nr 6x10" x10" 2xaxl0” Seo =0.255 x107A =2.55 mA OR b) i) Derivation of expression for force 2 Statement of Rule % Conditions for maximum and minimum foree s+ % ii) Calculation of magnitude of force 1% 13 Z@LLEGEw,Consider a rod of uniform cross sectional area A and length /, Let the umber density of mobile charge carriers in it be n. ‘Thus the total number of mobile charge carriers in itis n 7A. For steady current I, drift velocity of electrons v, , in the presence of external magnetic field B the force on these carriers Fon AgyB) = [jal}> a 18 Z@LLEGEw,DP. 4aze,r When distance is halved. E= B-—P ane, (CY re, G) 8p aze,P E becomes 8 times iii) P.=4x2Cm (along OA) x2Cm (along OD) =22qGm Electric field at centre O KPa fay at point O, kxaVBq = 2Vitg -24% r are, Along DC asim E= Alternatively % 19 Z@LLEGEw,Electric field at O due to charges at B and D E; = Est Ep 4.4 along OB =2kq Electric field at O due to charges at A and C E:~ Ext Ec along OC Ent = E+. a are, ‘Along DC Alternatively +q@ 2k xa 24 Gp) Similarly considering DC as another dipole, electric field at 0 2kqxa 2kga 1 Tye = 2kga Along DC 20 Z@LLEGEw,SECTION - E 34, a) Points at same potential 1 b) Current through arm bg 1 ©) Potential difference across Rs OR ©) Power dissipated in Ra «) Points (a, b, ¢) (ae) Gefig.h) are at same potential Note: Give full credit if a student mentions any two points at same potential from the above. inn According to Kirchhoff's loop rule for closed loop abgha -6+10b+h =0 h+10b=6 @ for closed loop actha -6+10(h- Bb ) +h 1 b-l0 be Adding (i) and (ii) 12h =12 1A O5A ‘current through arm bg Note: Award | mark if a student calculates the current by any other method, (ii) ©) Vas = (Ii-la) x Rs =05 x5 SV oR P= (lel)? x Ro =125W (0.57 x 5 24 Z@LLEGEw,a) Tracing of path of ray 1 b) Finding velocity of light ©) Explanation of two application of TIR 2 OR ©) Definition of TIR 1 Mentioning two conditions of TIR w+ From fig. angle of incidence on second face Zi= 60° cal angle Zi, =24.5° (40> (Zi) TIR takes place pyn= & v 1 £ = AO @ 124 x 108m n 241 ¢) Optical Fibre / Brilliance of diamond / mirage (any two) 4 Note: Give full credit if students mention the names of applications only. OR c) When light travels from optically denser medium to rarer medium at an interface and gets reflected back into the same medium the phenomenon is 1 called as total internal reflection, Conditions for TIR 1. Light must travel from optically denser medium to rarer medium. 2. Angle of incidence at the interface must be greater than the critical angle | %+% for the pair of media, 4 22 Z@LLEGEw,