SEMICONDUCTOR DEVICES

CONSTRUCTION AND SYMBOLS OF SEMICONDUCTOR

DEVICES
1. DIODE
Definition: An electronic component made of semiconductor material that allows
conduction of current in only one direction is termed as a Diode. It is a two-terminal
device normally formed by fusing p and n-type semiconductor materials each having
majority and minority carriers.

Symbol of Diode

Construction of a Diode

 H
e
r
e
,

as we can see a p-type semiconductor material is merged with an n-type

 semiconductor material that forms a junction. This junction is known as PN
junction. At the opposite ends, two metal contacts are attached that combinedly
form PN junction diode. The p-type material holds holes as its majority carrier
and electrons as its minority carrier. As against, the n-type material has electrons
as its majority carrier and holes as its minority carrier.

Working of Diode

 The operation of a diode involves unbiased, forward biased, and reverse biased
condition.

The unbiased condition of a diode:

When no any external potential or voltage is provided to the device. Then it is known as
the unbiased condition of a diode.
The figure given below will help you to have a better understanding of the unbiased
condition of a diode.

Here, the p-type material is fused with an n-type material. This fusion creates a junction.
When no voltage is applied across the diode then, majority charge carriers i.e., holes
from p side and electrons from n side get combined with each other at the junction.
These charge carriers on combining generate immobile ions that deplete across the
junction. Due to this a depletion region is formed at the junction.

It is to be noted here that the flow of charge carriers across the cross-section area is
known as diffusion. Hence the current at no bias condition is known as diffusion
current.
The potential difference at the depletion region generates an electric field across it. Due
to this electric field no any further movement of majority charge carriers is allowed. This
is why the width of the depletion region is fixed. The potential at the depletion region
acts as a barrier for further movement hence known as a barrier or built-in potential.
However, still, minority carrier drifts across the depletion region and a negligible current
flows. This very small current due to minority carriers is known as drift current.

The forward biased condition of a diode:

In the forward biased condition, p side of the device is connected with the positive
terminal of the supply. And n side is connected with the negative battery potential.
Thereby causing the junction to be forward biased.
Below a figure is given that represents the diode arrangement with positive biasing:
When forward biasing is applied. The holes in the p side experience a repulsive force
from the positive terminal. Similarly, electrons experience a repulsion from the negative
terminal of the supply provided. However, initially, the majority carriers from both the
sides do not move across the junction due to barrier potential.

But, as the barrier potential is exceeded, the majority charge carrier now shows
movement across the junction. This movement of charge carriers after overcoming the
barrier potential generates current. This current is known as the majority current. The
moment this barrier is removed, the resistance offered by the junction becomes
automatically 0. Thus, a forward current now starts to flow through the device.

It is noteworthy here that the barrier potential offered by silicon is 0.7V and for
germanium is 0.3V. So, after overcoming the respective potential in case of both the
materials, forward current starts flowing through the device.

The reverse biased condition of Diode:

When we externally provide the potential to the device in such a way that p side is
connected to the negative terminal of the supply. And n side is connected with the
positive terminal. Then the device is said to be reverse biased.

The figure below shows the reverse-biased arrangement of a PN junction diode:

When
a
reverse
potential is applied the holes from the p side experience attraction from the negative
terminal. And electrons in n side experiences attraction from the positive terminal of the
supply provided. Due to this, the majority carriers present in both the side move in the
direction away from the junction. This broadens the width of the depletion region and
hence the potential barrier is increased.

This takes the device to a non-conducting state. However, due to the minority carriers
present in both p and n side, a very small current flows. This small current through the
device is known as reverse leakage current. This reverse current is independent of
barrier potential and depends only on the temperature and construction of the device.

Characteristic Curve of a Diode

Region A represents the curve for the forward-biased diode. While region B shows a
curve for the reverse-biased diode.
Let us consider that diode is made of silicon material. Hence external potential required
to overcome barrier potential is 0.7V in its case. Thus we can see in forward biased
region, a rapid increase in current is noticed after 0.7 volts. This is known as knee
voltage after which barrier potential is totally removed and the device starts conduction.

Now, coming towards region B that represents the reverse biased condition of the
device. As we have already discussed that in a reverse biased case, the width of the
depletion region is very large and so is the barrier potential. Thus the curve represents
the reverse saturation current that flows only due to the movement of minority charge
carriers through the device. This reverse current is merely less than 1 microamps for a
silicon device.

Another noteworthy point here is that, at a nominal reverse voltage, a small reverse
current flows. But, on increasing the reverse voltage, a condition arises that causes the
junction of the diode to get a breakdown. This causes an immediate increase in the
reverse current through it.

Key terms related to Diode

Barrier potential: It is the voltage generated at the junction under zero biased condition
due to immobile ions. Also known as built-in potential.

Knee voltage: It is that forward bias voltage of a semiconductor device that overcomes
the barrier potential. After this voltage, a high number of charge carriers move across the
junction. Resultantly high current flows through the device. Its value is 0.3V for
germanium and 0.7V for silicon.

Breakdown voltage: At reverse bias, a very small current is noticed in the device due to
the flow of minority carriers. However, if the reverse voltage is increased beyond a
certain limit. Then it causes the junction to break down completely. This voltage is
known as the breakdown voltage.

Peak inverse voltage: We can understand peak inverse voltage (PIV) by the name itself.
Peak means the highest or maximum and inverse means the reverse. So, it is basically
that maximum voltage at a reverse biased condition which can be withstood by the
device.

2.) FIELD EFFECT TRANSISTOR

It is a three terminal unipolar device in which conduction is manipulated with the help of
applied electric field.Thus, it is also referred as a voltage controlled device in which only
majority charge carriers are involved in the conduction mechanism. It comprises of three
terminals, i.e. source, gate, and drain.

The circuit symbol described in the below diagram clearly illustrates the three terminals
of field effect transistor.

Construction and Working of FET

The semiconductor is the basis of all FETs. Depending on the channel we are using, i.e.
N-channel or P-channel, the semiconductor specimen will be used. If we are designing
N-channel JFETs, then the channel will be of an N-type semiconductor. And in the
middle of the opposite phases of the specimen will be diffused with the P-type
semiconductor.
The P-type semiconductor bar will act as a gate terminal. The opposite ends of the P-
type semiconductor will be connected together to form a common gate terminal. Thus,
there will be two P-N junctions on either side of the gate, and that will be termed as
source and drain terminal.

Components of FETs
Channel: This is the area in which majority charge carriers flow. When the majority
charge carriers are entered in FET, then with the help of this channel only they flow
from source to drain.
Source: Source is the terminal through which the majority charge carriers are introduced
in the FET.
Drain: Drain is the collecting terminal in which the majority charge carriers enter and
thus contribute in the conduction procedure.
Gate: Gate terminal is formed by diffusion of a type of semiconductor with another type
of semiconductor. It basically creates high impurity region which controls the flow of
carrier from source to drain.
Classification of FETs

Junction Field Effect Transistor: The junction FET is nothing but the FET in which
conduction is established by variation of depletion width when the junction is reversed
biased. It comprises of two types according to the construction that is N-Channel and P-
Channel.

Insulated Gate Field Effect Transistor: The insulated gate FET is one in which gate is
insulated by an insulation material from the semiconductor specimen. These are of two
types MESFET (Metal Semiconductor Field Effect Transistor) and MISFET (Metal-
Insulator-Semiconductor Field Effect Transistor).

Working of JFET

When NO bias is applied: In this case, no bias is applied to the gate terminal. It means
the gate to source voltage (Vgs) in this case is 0. Besides, the voltage at drain terminal is
also 0. In this case, the width of depletion region will remain constant. The electrons will
flow from source terminal to gate terminal.
The direction of flow of current is opposite to the direction of flow of electron. Thus,
current will flow from drain to source terminal. The ohmic contacts are made at drain,
gate and source to provide the connection.
When small negative bias is applied: When a small negative voltage is applied to the
gate terminal i.e. when the gate to source voltage is negative, then the width of depletion
region starts increasing.
Simultaneously, the positive voltage is applied to thesource terminal. The N-channel is
moderately doped while P-channel is highly doped. Due to this the width of the
depletion region is more in N-Channel than in P-channel.
The wedge shape depletion layer so formed will reduce the magnitude of the current
through the N-channel. This is because as the width of the depletion layer increases the
space provided for electrons to flow from source to drain will decrease and eventually
the drain current decreases.
The width of the depletion region is more near the drain terminal and less near the
source terminal. This is because the gate is more negative at the points which are nearer
to drain than to source. Besides, the current flowing from drain to source flows from the
region of high resistance to low resistance, thus the voltage drop will be created.

When the Large negative bias is applied: When the large negative gate to source
voltage is applied, then this large negative electric field will contribute to increment of
the width of the depletion region.
The negative voltage at gate terminal implies that the P-terminal is connected to
negative terminal of battery while N terminal is connected to the positive terminal. This
forms the reverse biased PN junction.
The reversed biased PN junction will create the depletion region and more the reverse
voltage more will be the width of the depletion region. Thus, at a certain point of
negative voltage, a point will reach when the drain current completely cuts off, and the
depletion layer from both the sides will almost touch each other at region nearer to drain
terminal.

This point of voltage is called pinch-off voltage. Thus, the Pinch-off voltage can be
defined as the reverse voltage applied at the gate to source terminal such that the drain
current will cease completely. At this point of time, no current will flow from the
junction field effect transistor.

3.) ZENER DIODE

A special type of PN junction diode that operates in reverse biased mode, more
specifically in breakdown region is known as Zener Diode. The doping level of the zener
diode is somewhat higher than the normal PN junction diode. So that it can give a sharp
breakdown voltage.

Symbol of Zener diode

Construction of Zener diode

Here, N and P substrate are diffused together. The junction region is covered with a layer
of silicon dioxide (SiO2). At the same time during construction, the whole assembly is
metallised in order to generate anode and cathode connection. The layer of SiO2 helps to
prevent contamination of the junctions. Thus, is used in the construction of zener diode.
Working of Zener diode
The operation of a zener diode is like a normal diode in forward biased mode. That
means a large majority current flows through the device when the forward potential is
applied to it. However, a zener shows variation from a normal diode in the aspect of its
doping concentration. Zener diode is highly doped thus its depletion width is very thin.
Due to this, more current flows through a zener diode as compared to a normal junction
diode.

It specifically acts in the breakdown region in the reverse biased condition. A zener
diode shows two breakdown approach, zener breakdown, and avalanche breakdown.

Avalanche breakdown mechanism

Avalanche breakdown is usually subjected to happen when the applied reverse bias
voltage is high. As we already know that in reverse biased condition, small minority
current flows through a normal diode. When a high reverse biased voltage is applied to
the device, the minority carriers experience acceleration and moves with high velocity.
During its movement, minority carriers collide with the atoms and generate more
number of free electrons. These free electrons further generate some more free electrons.
Thus, a high electric current is generated due to this multiplicative action.

Hence, we say high potential in reverse bias is required in case of avalanche breakdown.
This high current is responsible for the permanent destruction of a normal diode. But an
avalanche diode carefully manufactured to operate in breakdown region withstand the
high current flowing through it.

Zener breakdown mechanism

This breakdown mechanism is noticed in diodes that are heavily doped. Due to the high
concentration of impurities, the width of the depletion width is narrow. With the increase
in reverse potential, a strong electric field is generated by the depletion region.
As the reverse potential is supplied to the device and the voltage reaches near to zener
voltage. The electrons present in the depletion region utilize that energy and get
separated with the parent atom. Thereby generating free electrons. This action generates
more free electrons and hence their movement produces electric current through the
device. Thus, a small increase in reverse voltage will cause an immediate increase in
current through the device. The current flowing through the device shows its maximal
increase up to circuit permissible value. This reverse current will remain constant for a
wide range of reverse potential.

When a zener diode operates in the breakdown region, it does not burn rapidly.
However, the reason for this is some external circuit is required in order to protect the
device from the excess current.

VI Characteristics of Zener Diode

The figure represents the curve for both silicon and germanium diodes. The forward
characteristic of the zener diode is similar to a normal diode which is clearly seen in the
figure above.

In reverse biased condition, a small reverse current flows due to minority charge
carriers. On increasing the reverse voltage, current increases. A point is reached when
the junction gets destroyed and a sharp increase in current is noticed without any
noticeable increase in reverse potential. This voltage is known as zener voltage. The
current through the device is limited by making use of external resistance.

Key terms related to Zener Diode

Zener voltage: It is that reverse bias voltage at the which junction breakdown
completely and large current flows through the device at a constant potential.

Reverse saturation current: It is the current flowing through the device at reverse
biased condition due to the flow of minority charge carriers.

Zener impedance: Zener impedance is basically termed as the dynamic resistance of the
zener diode. It is defined as the ratio of small change in zener voltage and current.
4.)LIGHT EMITTING DIODE

LED (Light Emitting Diode) is an optoelectronic device which works on the principle of
electro-luminance. Electro-luminance is the property of the material to convert electrical
energy into light energy and later it radiates this light energy. In the same way, the
semiconductor in LED emits light under the influence of electric field.

Symbol of LED

Construction of LED
The semiconductor material used in LED is Gallium Arsenide (GaAs), Gallium
Phosphide (GaP) or Gallium Arsenide Phosphide (GaAsP). Any of the above-
mentioned compounds can be used for the construction of LED, but the colour of
radiated light changes with the change in material.
Construction of a Light Emitting Diode
The semiconductor layer of P-type is placed above N-type because the charge carrier
recombination occurs in p-type. Besides, it is the surface of the device, thus, the light
emitted can be easily seen on the surface. If P-type will be placed below the light will be
emitted from the surface of P-type but we will not be able to see it. This is the reason
that P-type is placed above.

The
P-
type

layer is formed from diffusion of semiconductor material. On the other hand in N-type
region, the epitaxial layer is grown on N-type substrate. The metal film is used on the P-
type layer to provide anode connection to the diode. Similarly, Gold-film layer is coated
on N-type to provide cathode connection.

Significance of Gold-film Layer

The gold-film layer on N-type also provides reflection from the bottom surface of the
diode. If any significant part of radiated light tends to hit bottom surface then that will
be reflected from the bottom surface to the device top surface. This increases LED’s
efficiency.

Working of LED
The electrons are majority carriers in N-type and holes are majority carriers in P-type.
The electrons of N-type are in the conduction band and holes of P-type are in the
valence band. The energy level of the Conduction band is higher than the energy level of
the Valence band. Thus, if electrons tend to recombine with holes they have to lose some
part of the energy to fall in lower energy band.
The electrons can lose their energy either in the form of heat or light. The electrons in
Silicon and Germanium lose their energy in the form of heat. Thus, they are not used for
LEDs as we want semiconductor in which electrons lose their energy in the form of
light.

Emission of Photons
Thus, semiconductor compounds such as Gallium Phosphide (Gap), Gallium Arsenide
(GaAs), Gallium Arsenide Phosphide (GaAsP) etc. emit light when electrons-holes
recombine. The electrons in these compounds lose their energy by emission of photons.
If the semiconductor material is translucent, the light will be emitted from the junction
as junction acts as the source of light. LED is operated in forward biased mode only. If it
will operate in reverse biased it will get damage as it cannot with stand reverse voltage.

Volt-Ampere Characteristics of LEDs

The characteristics curve of the LED shows that the forward bias of 1 V is sufficient to
increase the current exponentially.
 The output
characteristics curve
shows that radiant power of LED is directly proportional the forward current in LED.

5.)SILICON CONTROLLED RECTIFIERS

SCRs are constructed from silicon and are most commonly used for converting AC
current to DC current (rectification), hence the name Silicon controlled rectifier. They
are also used in other applications such as regulation of power, inversion, etc. The SCRs
have an ability to handle high value of current and Voltage hence they are used in most
of the industrial applications.

SCR Symbol
The Symbol of the SCR will be similar to that of the diode, additionally; it has a gate
terminal as shown below. The SCR is a unidirectional device that allows the current to
flow in one direction and opposes it in another direction. SCR has three terminals
namely Anode (A), Cathode (K) and gate (G), it can be turned ON or OFF by controlling
the biasing conditions or the gate input.

Construction of SCR
The SCR is a four-layered semiconductor device that forms NPNP or PNPN structure,
which eventually forms three junctions J1, J2, and J3. Among the three terminals of the
SCR, the Anode is a positive electrode, it will be on the P-layer and Cathode is a
negative electrode, it will be on the N-layer of the SCR, the Gate acts as a control
terminal of the SCR. The SCR Construction image is shown below.
The outer P and N layers where the two electrodes are placed will be heavily doped and
the middle P and N layers will be lightly doped, the gate terminal will be connected to
the P-layer in the middle.
How SCR works
To understand the SCR working principle we have to look into the different ways it can
operate. Depending on the polarity of the voltage applied and the gate pulse given to the
SCR, it can operate in three different modes such as

 Forward Blocking mode

 Forward Conduction mode
 Reverse Blocking mode

Forward Blocking Mode

In this mode of operation, the positive voltage is applied to the anode and the negative
voltage applied to the cathode, there will not be any pulse applied to the gate, it will be
kept in the open state. Once the voltage is applied, the junctions J1 and J3 will be
forward biased and the junction J2 will be reverse biased. Since J2 is reverse biased the
width of the depletion region increases and it acts as an obstacle for conduction, so only
a small amount of current will be flowing from J1 to J3.

When the voltage applied to the SCR is increased and if it reaches the breakdown
voltage of the SCR, the junction J2 gets depleted due to avalanche breakdown. Once the
Avalanche breakdown occurs the current will start flowing through the SCR. In this
mode of operation, the SCR is forward biased, but, there will not be any current flow.

Forward Conduction Mode

The Forward Conduction Mode is the only mode at which the SCR will be in the ON
state and will be conducting. We can make the SCR conduct in two different ways, one
we can increase the applied forward bias voltage beyond the breakdown voltage or else
we can apply a positive voltage to the gate terminal.
When we increase the Applied forward bias voltage between the anode and cathode the
junction J2 will be depleted due to the avalanche breakdown and the SCR will start
conducting. We are not able to do this for all the applications and this method of
activating the SCR will eventually reduce the lifetime of the SCR.
If you want to use the SCR for low voltage applications you can apply a positive voltage
to the gate of the SCR. The applied positive voltage will help the SCR to move to the
conduction state. During this mode of operation, the SCR will be operating in forward
bias and current will be flowing through it.

Reverse Blocking Mode

In the reverse blocking mode, the positive voltage is applied to the Cathode (-) and the
Negative voltage is given to the Anode (+), There will not be any pulse given to the gate,
it will be kept as an open circuit. During this mode of operation the Junctions J1 and J3
will be reverse biased and the junction J2 will be forward biased. Since the junctions J1
and J3 are reverse biased there will not be any current flowing through the SCR.
Although there will be a small leakage current flowing due to the drift charge carriers in
the forward-biased Junction J2, it is not enough to turn on the SCR.
VI Characteristics of SCR
The VI characteristics of the SCR are obtained by operating the SCR in three different
regions, namely forward blocking region, forward conduction region and reverse
blocking region.
When the SCR is operating in the reverse blocking mode, there will be small leakage
current flowing in the reverse direction of the SCR which is mentioned as the reverse
leakage current in the graph, the reverse leakage current will be located at the negative
quadrants of the graph.
Now if you apply positive voltage to anode and negative voltage to cathode the SCR
will start operating in the forward blocking mode and a small leakage current will be
flowing through the SCR in the positive direction, hence the curve starts rising to a
certain level in the positive quadrants of the graph which is mentioned as the forward
leakage current.
Once the graph reaches a certain voltage level called the Breakdown voltage or if the
gate current Ig is applied to the SCR, the SCR moves to the conduction mode and a high
amount of current starts flowing through the SCR. The current flow is represented as the
forward conduction in the VI curve. The gate current applied are mentioned as Ig1, Ig2
and Ig3, higher the applied gate current faster the SCR goes to the conduction state as
Ig3 > Ig2 > Ig1.

6.)Liquid Crystal Display (LCD)

Definition: LCD is an acronym used for Liquid Crystal Display. It is basically a display
technique in which liquid crystals are used in order to produce an image on the screen.
Unlike an LED, an LCD does not hold the property of producing light. However, it
allows some regions to appear either bright or dark by controlling the light energy
emitted by an external source.

What are Liquid Crystals?

Liquid crystals are considered as the 4th state of matter. This is so because they are
neither solids nor liquids. But they possess the properties of crystal and holds the ability
to flow or move like liquid.
In their crystalline structure, the molecular orientation resembles like solid. However,
these molecules also show movement in various positions. Thereby holding the property
of solid as well as liquid. Therefore known as liquid crystal.

This liquid crystal displays the images or characters as the light emitted by the source
can be either passed or obstructed by the molecular movement of the crystal.
In liquid crystal display, twisted nematic type crystal is basically used. This is so
because the molecules of this nematic crystal are somewhat naturally twisted at an angle
of about 90°. Also, according to the applied potential, the molecules show untwist at
changing degrees.
Construction of LCD

The liquid crystal having a thickness of nearly about 10 to 20 micrometres is placed

between two glass sheets. On the inner surface of the two glass sheets, conductors are
inserted. These conductors form electrodes. The two electrodes show positive and
negative polarity to be applied.
The external potential is provided to the display unit with the help of these two
electrodes. These are basically formed by materials like indium oxide (IN2O3) and
stannic oxide (SnO3).
Here, a fluorescent light source is used. The light emitted by this source is then fed to
the polarizer here we have considered a vertical polarizer as the input polarizer. Also, a
polarizer of opposite polarity as that of input is placed at another end of the display unit.
At the opposite end of the electrode, a glass cover is placed at which the desired image is
displayed.

Working of LCD
As we already have the idea that LCD is not an electroluminescent device. This means it
does not has light-producing property instead of that it allows light to appear bright or
dark by making use of a liquid crystal. Now, let us proceed to understand the operation
of LCD.
The figure represented below will help you to have a better understanding of the
working of an LCD:
When light from a backlight source is emitted and allowed to fall on the vertical
polarizer. Then the unpolarized light by the source gets vertically polarized. When
initially no external potential is provided between the two electrodes, the molecules of
the liquid crystal remain twisted.
This causes the vertically polarized light to get horizontally polarized due to the
orientation of the molecules.
As we have discussed that the orientation of the two polarizers is 90° in accordance with
each other. Thus, the polarizer at the other end is a horizontal polarizer.
Hence, when the horizontally polarized light from the output of the nematic crystal is
fed to the horizontal polarizer then it passes the light thereby causing illumination of the
pixel. Hence, generates a visible image on the screen.
Suppose when a large voltage is applied between the two electrodes. Then this applied
voltage causes the twisted mechanism of the molecules to get damaged causing it to
operate in a straight manner.
Due to this, the vertically polarized light while passing the nematic crystal does not
change its polarization. This blocks the vertically polarized light to pass the horizontal
polarizer thereby generating a dark pixel at the display.

7.) BIPOLAR TRANSISTOR JUNCTION

A bipolar junction transistor is a three-terminal semiconductor device that consists of
two p-n junctions which are able to amplify or magnify a signal. It is a current controlled
device. The three terminals of the BJT are the base, the collector, and the emitter. A
signal of a small amplitude applied to the base is available in the amplified form at the
collector of the transistor. This is the amplification provided by the BJT. Note that it
does require an external source of DC power supply to carry out the amplification
process.

Bipolar Junction Transistor Symbol

Construction of Bipolar Junction Transistor

BJT is a semiconductor device that is constructed with 3 doped semiconductor Regions
i.e. Base, Collector & Emitter separated by 2 p-n Junctions.
Bipolar transistors are manufactured in two types, PNP and NPN, and are available as
separate components, usually in large quantities. The prime use or function of this type
of transistor is to amplify current. This makes them useful as switches or amplifiers.

Operation of Bipolar Junction Transistor

There are three operating regions of a bipolar junction transistor:
 Active region: The region in which the transistors operate as an amplifier.
 Saturation region: The region in which the transistor is fully on and operates as a
switch such that collector current is equal to the saturation current.
 Cut-off region: The region in which the transistor is fully off and collector current
is equal to zero.
Types of Bipolar Junction Transistor
There are two types of bipolar junction transistors:
PNP bipolar junction transistor
NPN bipolar junction transistor

PNP BJT
In PNP BJT, the n-type semiconductor is sandwiched between the two p-type
semiconductors. The two p-type semiconductors act as emitter and collector respectively
while the n-type semiconductor acts as a base. This is shown in the figure below.

The current enters the transistor through the emitter such that the emitter-base junction is
forward biased and the collector-base junction is reverse biased.

NPN BJT
In NPN BJT, p-type semiconductor is sandwiched between the two n-type
semiconductors. The two n-type semiconductors act as emitter and collector respectively
while the p-type semiconductor acts as a base. This is shown in the figure below.
Current entering the emitter, base, and collector has the sign convention of positive
while the current that leaves the transistor has the sign convention of negative.

Function of Bipolar Junction Transistor

BJTs are of two types namely NPN and PNP based on doping types of the three main
terminals. An NPN transistor consists of two semiconductor junctions that have a thin p-
doped anode region and PNP transistor also consists of two semiconductor junctions that
have a thin n- doped cathode region.

The flow of charge in a Bipolar transistor is due to the diffusion of charge carriers
between the two regions belonging to different charge concentrations. Regions of BJT
are known as the base, collector, and emitter.

The emitter region is highly doped when compared to other layers. Both collector and
base layers have the same charge carrier concentrations. Among these junctions, the
base-emitter junction is forward biased, and the base-collector junction is reverse biased.
Forward biased means p-doped region has more potential than the n-doped side.

Configuration of Bipolar Junction Transistors

Since Bipolar Junction Transistor is a three-terminal device, there are three ways to
connect it within an electric circuit while one terminal is the same for both output and
input. Every method of connection responds differently to the input signals within a
circuit.

 Common Emitter Configuration – has both voltage and current gain

 The common Collector Configuration – has no voltage gain but has a current gain
 The common base configuration – has no current gain but has a voltage gain

ASSIGNMENT
Describe 5 applications of the following semiconductor devices:
1. Diode
2. Bipolar Junction Transistor
3. Field Effect Transistor
4. Light Emitting Diode
5. Liquid Crystal Display
6. Silicon Controlled Display