11/12/29, 8:61 PM Solved Problems: Semiconducting Materials Sider: Free ChatGPT translator Sider ome (ips auneinkartco) || Engineering Physics Il (htps:www brinkart com/eubjaclEngineering Physics 1404) | Solved Problems: Semiconductng ‘4 Prov Page (pst banka comvarlSemieonductng Matrals_6220) Newt Page (rps ra 7 comlartla pertant Short Questone-and-Anewere-Sericonductng Metrle_6822) ‘Chapter: Physics: Semiconducting Materials Solved Problems: Semiconducting Materials Physics - Somicondutng Matra -Inporant SoledProlems(Sum):Semiconducing Maori ‘SOLVED PROBLEMS. insic concentration of charge carriers at 300 K given that m *,=0.12m ,m *y =0.28m, and the value of brand 0.67 eV. Solution: 1.Caleutate the in say Given: Free ChatGPT Browser Extension CCratGPT eoncerFlugh as yur Alesstarter ary 2c nips www. brainkart convarticlelSolved.Problems--Semiconducting-Materals_6821! sno‘112723, 651 PM Solved Problems: Semiconducting Materials Given: 12.9.1 x10! #1092 «107'Kgm> 28x 9.11078! =2.548 «107! Kgm Intrinsic carrier concentration is given by, [8] “omen soars co 6 626% 107 = 21.4421 « 10%) = 2.884 x 10” (tmty* = (1.092% 10" 2548 « 10) = 6813x107 067« 16% 10-9 exp| -| > — 21.38 «109 x 300 = exp (12.9468) 2.3838 = 10% [1.442 * 10%] x 6.813 = 10-7 = 2.3836 = 10% 2.3407 « 10% Intrinsic cater eros 7 23807 108 2.the intrinsic carrier density is 1.5 x 10! mS, If the mobility of electron and hole are 0.13 and 0.05 m? V-! s+, cateulate the conductivity. Solution : Given n= 15 «10m 0.13 me vst y= 0.05 m? Vs Conivetivity 6 = neu, +H,) = 15% 10% 1.6 « 10°" (0.13 + 0.05) 432% 104 0ne! Conuctivity are 0.38 and 0.18 3. ‘The Intrinsic earrier density at room temperature in Ge is 2.37 = 10!° m? i the electron and hole mobi Sea? 15+ respectively, ealeulate the resistivity. ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 20123,851 PM Solved Problems: Semigonducting Matrls Given: 2.37» 10" me 0.38 m V's 0.18 ms net Hh) = 2.37% 10% « 1.6 x 10-¥ (0.38 + 0.18) Consuctivity = 2.1235 0" mr’ 1 Resistivity = o 1 21238 0.4709 2m Resistivity 4:The Hall coefficient of certain the semiconductor. If the conduct mm specimen was found to be ~7.35 * 10-* m® C~! from 100 to 400 K. Determine the nature of was found to be 200! a, Caleulate the density and mobility ofthe charge carrier. Solution: Conductivity & 2007 Hall co-efficient Ry = -7.35 10m 4) Density of electrons a = n= | (ffomequation(1 Ree * (0) BS (735% 10 x 1.609% 107) fie) = 8.455 10% m3 We know Conductivity a= nene b) Mobility o 200 ne 8.455% 107 x1.6x10- = 0.0147 Mobility w= 0.0147m°v™'s Density of electrons (ni 8.053 « 107? m Mobility (11) =0.0147m: 5. In a P-type germanium, n;= 2.1 * 10°" m-density of boran 4.5 x 102 atoms /m?, The electron and hole mobility are 0.4 and 0.2 ly. What is its conductivity before and after addition of boron atoms. ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 3it011/12/29, 8:61 PM Solved Problems: Semiconducting Materials Solution: Given: Intrinsic carrier concentration n,= 2.1 * 10!" m> Mobility ofelectrons = 04m vist Mobility of holes = 02 mF vist 4) Conductivity before the addition of boron atoms 6 = ne(He +My) = 21x10 «16 107? (0.4402) = 2.016 0% wrt 4) Conductivity after the addition of boron atoms, Boron is a P-type impurity atom o = penn 4,5 * 10 * 1.6 « 10" «0.2 6 = 14400 O° nr! 6, An N-ype semiconductor has hall coefficient = 4.16 * 10-4 m! C1, The conductivity is 108“! m1, Calculate its charge carrier density ‘n,'and electron mobility at room temperature, Solution: Given: Given: 4.16» 10+ mC 108 One! Hall Co-efficient R, Conductivity 1. For‘n' type the charge carriers density Here the negative signindicates the field direction alone, 1 1.6107 4.6104 tos (1169010? 16 «-) He = 0.0381 m2y~!s-! 7. Im an Naype semiconductor, the concentration of electron i 2 x 10% m> Its electrical conductivity is 112“! mr, Caleulate the mobility of electrons. ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 41011/12/29, 8:61 PM Solved Problems: Semiconducting Materials Solutio Given: Conductivity 6 = 112 0° nr! Carrier conemtration of electron n= 2 «10% me Hallcoeticent R,, —— 2107 «16x10 3.125 « 104 mr? Ct Mobility = OR, = 123.125 104 0,035 me? v's! 8, For an intrinsic Semiconductor with a band gap of 0.7 eV, determine the position of EF at T= 300 K if m*h = 6m" Solu Bandgap Eg = 0.7eV = 0.7% 16 «10-"V T = 300K Fermi energy foran intrinsic semiconductor 0.716 x 107] [3x138% 103x300], 6 OT ANG 1 || SARS NO 30 hog B= 4 = 6.1563 « 10 Joules 6.1563 «107 Ee 1.6 «107 Fermienergy evel E, = 0.3847 eV '9.A semiconducting crystal with 12 mm long, $ mm wide and 1 mm thick has x magnetic density of 0.5 Whm* applied from front to back perpendicular to largest faces. When a current of 20 mA flows length wise through the specimen, the voltage ‘measured across its width is found to be 374 . What is the Hall coefficient of this semiconductor? Solution: Given: ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 51011/12/29, 8:51 PM Solved Problems: Semiconducting Materials HallvoltageV, = 37 wV=37 = 10*V Breath ofthe material t 10m Current |, = 20mA=20 * 107A Magnetic flow density B= 0.5 Wom? Hallcoefficient R= 37x10 x1x 103 20* 103 x05 R, = 3.7 10*C! Hall coefficient R= 3.7 « 10 Cm? 10, Find the resistance of an intrinsic Ge rod 1 mm long, 1 mm wide and 1 mm thick at 300 K. the intrinsic carrier density 2.5 1019 mis at 300 K and the mobility of electron and hole are 0.39 and 0.19 m? y* Solution: Given. Length of Ge rod 7 = Imm =1 10% Breath b= Imm =1 «10° Thickness t= Imm =1 «10m Intrinsic carrier concentration n, = 2.5 * 10° mr? Mobility ofelectron H,= 039m vst Mobility ofhote n= O19 mv st 4) Conductivity ne(e +4) 109 1.6 x 10719 (0.39+0.19) 9 2320 ) Resistance R= aa 1x10™ a Aebxt 252 « (1x10 1x10) Kabat) Re aie 11, Hall coefficient of a specimen of depend silicon found to be 3.66 10“ m* C4, The resistivity of the specimen is 8.93 * 10-* m. ind the mobility and density of the charge carriers. ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 eit0‘yaa, 851 PM Solution: Hallcoeffcient R,, = 3.66 « 10+ m' 8.93 « 10° Solved Problems: Semiconducting Materials Resistivity p 9) Density of holes Rue 1 ~ 366 «107 16x10 n= 1.7076 = 102 me 1 1) Mobility of holes Ha = oy, 1 8.93 «10 x 1.7076 = 107 x16 10 H,= 0.041 mV" 12, The intrinsic earrier density of a semiconductor is 2.1 « 10!" mi, The electron and hole mobilities are 0.4 and 0.2 m? V-! respectively. Calculate the conductivity. Solu Solution: Given data: Intrinsic carrier concentration, = 2.1 x 10" mr Mobility of electron = 04m V4 Mobility ofhole 02m Vis! Conductivity o = ne(u+H) 2.1 x 10" 1.6 « 10-” x (0.4 +0.2) ‘Conductivity . 016 "ar! 13, The electron mobility and hole mobility in Si are 0.135 m? V-! =! and 0.048 m? Vs respectively at room temperature. If the carrier concentration is 1.5 * 1016 mr, Calculate the res tivity of Si at room temperature. Solution: Given data: Carrier concentration Mobility ofelectron Mobility ofhole 0) Electrical Conductivity & 1.5 10 « 1.610-" (0.135+0.048) 0.4392 «10° 0" nr ii) Resistivity pf silicon ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 mo11/12/29, 8:61 PM Solved Problems: Semiconducting Materials ASSIGNMENT PROBLEMS 1. Find the resistance of an intrinsic germanium rod 1 em fong, Imm wide and Imm thick at 300 K. the intrinsic carrier density is 2.5 x 10°? / mat 300 K and the mobility of electron and hole are 0.39 and 0.19 m? V-! S" (Ans: 4.31 « 108) Calculate the postion of Fermi level Ey andthe conductivity at 300 K for germanium crystal containing 5 % 10°? arsenic atoms / my. Also caleulate the conductivity ifthe mobility ofthe electron is 0.39 m® =! Sh (Ans : Ey is 0.16 eV below E, = 3210-1 my Ina Hall experiment a curren of 25 Ais passed through a Tong foil of silver which is 1mm thick and 3em wide, Ifthe magnetic field of flux density 0.14 Whin? is applied perpendicular t the fi, calelate the Hall vollage development and estimate the mobility of electrons in silver. The conductivity the Hall coefficient is (8.4 10-!!}m' / coulomb, (Ans : 29.4 V and 87.7 10-4 m? V1) ‘The intrinsic carier density at room temperature in Ge is 2.37 * 10!° m, Ifthe electron and hole mailities are 0.38 and 0.18 m? VS! respectively, calculate the resistivity. (Ans 10871 m) 5. For silicon semiconductor with band gap!.12 eV, determine the postion ofthe Fermi level at 300 K, ifm’, 0.12my and my, 0.28mp (Ans £0,576 eV) Discover related topics Band Structure Measurement Fermi Level in Semiconductor Fermi Level in Intrinsic Semiconductor Fermi Levol in Semiconductor Pat Intrinsic Compound Semiconductor Foran intrinsic semiconductor with gap width E, mo’, ey my 0.7 eV, calculate the concentration of intrinsic charge carriers at 300 K assuming that ") A silicon plate of sickness Imm, breadth 10mm, and length 100mm is placed magnetic field of 0.5 whi? acting perpendicular to its thickness. IFA 107 current flows along its length, calculate the Hall voltage developed ifthe Hall coeficient is 3.66 10-4 m3 / coulomb, (Ans: 3.7 «108 my ‘A Natype semiconductor has Hall coefficient = 4.16 * 10 C~! m?. The conductivity is 108 ohm”! mr!, Celeulate its charge carrier density and electron mobility at room temperature, (Ans: 0.038 m? V-!S-!) ntps:twwwbrainkart.comiantcle!SoWved:-Problems--Semiconducting-Materils_ 68211 sito11/12/29, 8:61 PM Solved Problems: Semiconducting Materials ‘Study Malaria Lecting Noles, Assignment Reference, Wiki description exlanaton, bi dt Physce Samiconaucing Mater Salad Problems: Semoonducing Matera | ‘4 Prov Page (pst banka. comvarlSemiconductng Matrals_6220) Nox Pago (htpsstwwn_brankart conlartclemportant Shor Questons-ad-Answere-Samiconducting Meters 8822) Related Topics Engineering Physis Il (ps:twwyebrinkarcomisuto 0g-Physic| 108) ‘Anna University -Al Sujets tose braekart commen reasiersy) ‘Anna University EEE Al S.ojcs(htoews brainkar.cominens rassuniversy-eee) Anna Univerty ECE - Al Subject ntpslwbankart.comimenulanna-unveray ee) An University Civil-Al Sujets (ositnw bina connenulanowuniversiyci) Ana University ME Al Subject tps bainkaconvmanutnna-unvrsiy- me) Physic Semiconductng Materials semiconducting Matra pew banka con/arlaSemiconducting Mate Important Questions and Answers: Semiconductng M Motori 6808) ale (hipssworankar cavalier Qestons-and-Arswers-Smicanducing- Semiconducting Matar roe tn brainkar. conan Semiconducting Mate Solved Problems: Semiconducting Matera (npswww banka comarilalSaved-Problems-Semoanducing§ Important Short Questions and Answers: Semicondueting Materials (ose brenart con/arclaimporant-Shor-Questons-and.Answere-Semicanducng- Merit 820) tps www. brainkart.convarticle/Solved.Problems--Semiconducting-Materals_6821!11/12/29, 8:61 PM Solved Problems: Semiconducting Materials ‘Pry Plates), Tame on Canon (bates). 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