奈電實驗室對外提供服務之範圍

• Virtual R&D platform service & special module supports

– Design service, frontend logistic, testing and assembly
– 200-300mm Backend wafer process (standard or customization)
• Fast idea validation prototyping
• Small quantity pilot run service (~100 wf/month@ 2 metal layers production)
服務性質 服務內容(8”晶圓製程)
‧ Spare parts驗證
‧ Target阻值及均勻性驗證
‧ Cleaning process/chemical驗證
‧ Customer designed process驗證
‧ Nanolithography 開發與驗證
材料與製程驗證 ‧ Back end process開發與驗證
‧ Dielectrics 驗證
‧ Process gas 驗證
‧ Chemical驗證
‧ 製程可靠度驗證
‧ Customer designed process and product之開發/整合與驗證
合作開發
‧ 支援關鍵/前瞻計畫之核心半導體製程
‧ Thermal oxide deposition (LPCVD)
‧ Dielectric etching (Si-based)
‧ CMP (Cu、oxide、TiN、TaN / Ta )
‧ Metal sputtering ( Ta / TaN、AlCu、Cu、TiN、Ti)
‧ Metal etching ( Ta / TaN、AlCu、Cu、TiN、Ti)
單站模組工服(BEOL)
‧ Post etching clean
‧ Lithography 0.18 um overlay accuracy＝80 nm
‧ Oxide / Nitride Deposition( HDP PECVD)
‧ Copper Plating (ECD)
‧ 8吋玻璃晶圓(BF33)奈米圖案化製程服務

Copyright 2008 ITRI 工業技術研究院 1

 Backend Interconnect Processes
Al-interconnect Cu-interconnect
(400nm compatible) (240nm compatible)

• ILD-1 dep • ILD-1 dep

• BE dep/photo/etch • BE photo/etch/dep
• ILD-2 dep/CMP • BE CMP
• Via photo/etch • ILD-2 dep
• Metal dep • Via photo/etch
• Metal CMP • Trench photo/etch
• TE dep/photo/etch • TE dep
• ILD-3 dep • TE CMP
• ILD-3 CMP

Copyright 2008 ITRI 工業技術研究院 2

 Flow chart of process & prices
Al-interconnect Process Cu-interconnect Process
Silicon Silicon
Isolation layer-1 deposition 6KA SiO2 Isolation layer-1 deposition 6KA SiO2
Bottom electrode deposition 2KA Al Bottom electrode patterning
Bottom electrode patterning Bottom electrode etching 3KA
Bottom electrode etching Bottom electrode deposition
Isolation layer-2 deposition 6KA SiO2 Bottom electrode CMP
Isolation layer-2 CMP Isolation layer-2 deposition 6KA SiO2
Via patterning Via patterning
Via etching 3KA Via etching 6KA
Via deposition Trench patterning
Via CMP Trench etching 3KA
Top electrode deposition 2KA Al Top electrode dep
Top electrode patterning Top electrode CMP
Top electrode etching
Isolation layer-3 deposition 6KA SiO2  依EOSL標準RDL製程為評估依據
Isolation layer-3 CMP  共3道光罩，40個步驟，製程時間約4週
 每片價格約117K NTD
 依EOSL標準RDL製程為評估依據  可提供客製化服務，需自行提供光罩
 共3道光罩，42個步驟，製程時間約4週 layout，價格另計
 每片價格約106K NTD
 可提供客製化服務，需自行提供光罩
layout，價格另計
Copyright 2008 ITRI 工業技術研究院 3