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BRIDGELUX BLUE POWER DIE

BXCE 45 x 45 mil

PRODUCT DATA SHEET DS-C10

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The Bridgelux family of blue power die enables high performance and cost effective solutions to

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serve solid state lighting market. This next generation chip technology delivers improved
efficiency and performance to enable increased light output for a variety of lighting, signaling and

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display applications.

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Features Applications
 High lumen output and efficiency  General Illumination

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 Long operating life  Street Lights
 Increased current spreading traces for  Portable Lighting

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highly efficient and uniform illumination
 Architectural Lighting
 100% Tested and sorted by wavelength,
 Directional Lighting


power and forward voltage
Lambertian emission pattern TR  Wide Area Lighting
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 Display Backlighting
 Compatible with Solder paste, solder
preform or silver epoxy die attach  Digital Camera Flash
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 Delivered on medium tack blue tape  Automotive Lighting


(20cm±10mm ×20 cm±10mm)  White LEDs
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LED Chip Diagram


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101 P ortol a A v enue, Li v erm ore, C A 94551 • T el : (925 ) 583 -84 0 0 • Fa x: (92 5) 58 3 -8 401 •
w w w. bri dgel u x. c om
BRIDGELUX BLUE POWER DIE
BXCE 45 X 45 MIL

Product Nomenclature

BXCE 4545 XXX – YY– Z

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Where:
BXCE: Designates product family

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4545: Designates die size (45 mil x 45 mil)

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XXX: Designates dominant wavelength bin

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YY: Designates radiometric power bin
Z: Designates forward voltage bin

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Part Numbering and Bin Definitions

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Bridgelux LED chips are sorted into the brightness and dominant wavelength bins shown below at If =
350 mA. Each blue tape contains die from only one brightness bin and one wavelength bin.
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Each blue tape contains chips with 0.2 V forward voltage bins: 3.0 - 3.2 V, 3.2 - 3.4 V and 3.4 - 3.6 V.
The typical forward voltage is 3.3 V and the maximum forward voltage (Vf max) = 3.6 V.
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Dominant Power Bin F1 Power Bin F2 Power Bin G1


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Wavelength (340-360 mW) (360 – 380 mW) (380 – 400 mW)


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447.5 to 450nm BXCE4545447- F1-z BXCE4545447- F2-z BXCE4545447- G1-z


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450 to 452.5nm BXCE4545450- F1-z BXCE4545450- F2-z BXCE4545450- G1-z


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452.5 to 455nm BXCE4545452- F1-z BXCE4545452- F2-z BXCE4545452- G1-z


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455 to 457.5nm BXCE4545455- F1-z BXCE4545455- F2-z BXCE4545455- G1-z


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457.5 to 460nm BXCE4545457- F1-z BXCE4545457- F2-z BXCE4545457- G1-z


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460 to 462.5nm BXCE4545460- F1-z BXCE4545460- F2-z BXCE4545460- G1-z


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462.5 to 465nm BXCE4545462- F1-z BXCE4545462- F2-z BXCE4545462- G1-z


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(Continued on page 3)

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Dominant Power Bin G2 Power Bin H1

Wavelength (400-420 mW) (420 – 440 mW)

447.5 to 450nm BXCE4545447- G2-z BXCE4545447- H1-z

450 to 452.5nm BXCE4545450- G2-z BXCE4545450- H1-z

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452.5 to 455nm BXCE4545452- G2-z BXCE4545452- H1-z

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455 to 457.5nm BXCE4545455- G2-z BXCE4545455- H1-z

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457.5 to 460nm BXCE4545457- G2-z BXCE4545457- H1-z

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460 to 462.5nm BXCE4545460- G2-z BXCE4545460- H1-z

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462.5 to 465nm BXCE4545462- G2-z BXCE4545462- H1-z

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Note: z = “A” for Vf bin of 3.0-3.2V; z = “B” for Vf bin of 3.2-3.4V; z = “C” for Vf bin of 3.4-3.6V

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BRIDGELUX BLUE POWER DIE
BXCE 45 X 45 MIL

Mechanical Dimensions

Chip Size 1143 +30/-15 μm × 1143 +30/-15 μm (45 mil x 45 mil)

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Chip Thickness 150 ± 10 μm (5.9 mil)

Au Pad Thickness 3.0 ± 0.3 μm

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P Pad (2X): 100 μm

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Au Pad Diameter
N Pad (2X): 105 μm

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Absolute Maximum Ratings

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Parameter Symbol Maximum Rating Condition
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DC Forward Current
Forward Voltage TR
If
Vf
700 mA
3.6 V
Tj = 140°C
If = 350 mA
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Junction Temperature Tj 150°C
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Reverse Voltage Vr -5 V Ta = 25°C


Reverse Current Ir 2.0 µA Vr = -5 V
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Optical Power (minimum) P0 340 mW If = 350 mA


Assembly Process Temperature 325°C for < 5 seconds
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Storage Conditions (chip on tape) 0°C to +40°C ambient, RH < 65%
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Notes:
1. Maximum drive current depends on junction temperature, die attach methods/materials, and lifetime
requirements of the application.
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2. Bridgelux LED chips are Class 1 ESD sensitive.


3. The typical spectra half-width of the BXCD4545 blue power die is < 25 nm.
4. Please consult the Bridgelux technical support team for information on how to optimize the light output
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of our chips in your package.


5. Brightness values are measured in an integrating sphere using gold plated TO39 headers without
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encapsulation.
6. Tapes should be stored in a vertical orientation, not horizontally stacked. Stacking of tapes can place
excessive pressure on the bond pads of the LED, resulting in reduced wire bonding strength.
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Environmental Compliance
Bridgelux is committed to providing environmentally friendly products to the solid state lighting
market. Bridgelux BXCE4545 blue power die are compliant to the European Union directives on the
restriction of hazardous substances in electronic equipment, namely the RoHS directive. Bridgelux
will not intentionally add the following restricted materials to BXCE4545 die products: lead, mercury,
cadmium, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated diphenyl ethers
(PBDE).

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BRIDGELUX BLUE POWER DIE
BXCE 45 x 45 mil

Performance vs. Current


The following curves represent typical performance of the BXCE4545 blue power die. Actual
performance will vary slightly for different power and dominant wavelength bins.

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2.5

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Relative Luminous Intensity

2.0
Normalized at 350 mA

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1.5

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1.0

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0.5

0.0 TR
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0 100 200 300 400 500 600 700 800 900 1000

Forward Current, If (mA)


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Figure 1: Relative Luminous Intensity vs. Forward Current (device tested on a probe station)
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1000
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Forward Current, If (mA)
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100
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1
0 1 2 3 4 5
Forward Voltage, Vf (V)

Figure 2: Forward Current vs. Forward Voltage (Tj = 25°C)

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BRIDGELUX BLUE POWER DIE
BXCE 45 x 45 mil

Performance vs. Junction Temperature


The following curves represent typical performance of the BXCE4545 blue power die. Actual
performance will vary slightly for different power and dominant wavelength bins.

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0.00

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-0.05

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Normalized at 350mA,Tj25°C

-0.10
Forward Voltage Shift (V)

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-0.15

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-0.20

-0.25

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-0.30

-0.35 TR
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-0.40
25 50 75 100 125 150
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Junction Temperature (ºC)


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Figure 3: Forward Voltage vs. Junction Temperature


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110%
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100%
Normalized at 350mA,Tj25°C

90%
Relative Light Intensity

80%
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70%
60%
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50%
40%
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30%
20%
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10%
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0%
25 50 75 100 125 150
Junction Temperature (ºC)

Figure 4: Relative Light Output vs. Junction Temperature

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BRIDGELUX BLUE POWER DIE
BXCE 45 x 45 mil

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5

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Normalized at 350mA,Tj25°C
Wavelength Shift (nm)

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4

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3

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2

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1

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0
25 50 75 100 125 150

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Junction Temperature (ºC)
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Figure 5: Wavelength Shift vs. Junction Temperature


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Typical Radiation Pattern


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Figure 6: Typical Radiation Pattern (350 mA Operation)

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BRIDGELUX BLUE POWER DIE
BXCE 45 x 45 mil

Current Derating Curves

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Rja = 20 Deg C/W Rja = 40 Deg C/W Rja = 60 Deg C/W

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800

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700

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600
Forward Current, If (mA)

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500

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400

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300

200

100 TR
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0 10 20 30 40 50 60 70 80 90 100 110 120


Ambient Temperature, Ta (oC)
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Figure 7: Current Derating Curve vs. Ambient Temperature (derating based on T j max 150°C)
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About Bridgelux

Bridgelux is a leading developer and manufacturer of technologies and solutions transforming the $40
billion global lighting industry into a $100 billion market opportunity. Based in Livermore, California,
Bridgelux is a pioneer in solid-state lighting (SSL), expanding the market for light-emitting diode (LED)
technologies by driving down the cost of LED lighting systems. Bridgelux’s patented light source
technology replaces traditional technologies (such as incandescent, halogen, fluorescent and high

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intensity discharge lighting) with integrated, solid-state lighting solutions that enable lamp and

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luminaire manufacturers to provide high performance and energy-efficient white light for the rapidly
growing interior and exterior lighting markets, including street lights, commercial lighting and

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consumer applications. With more than 650 patent applications filed or granted worldwide, Bridgelux
is the only vertically integrated LED manufacturer and developer of solid-state light sources that

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designs its solutions specifically for the lighting industry.

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For more information about the company, please visit www.bridgelux.com

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© 2013 Bridgelux, Inc. All rights reserved. Product specifications are subject to change without
notice.

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B ri dgel u x B XC E 4 5 x45 P ro duc t D ata S he et D S -C 1 0 (5/ 30 / 2 013 ) P age 9 of 9

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