BF244A / BF244B / BF244C

BF244A
BF244B
BF244C

S TO-92
G
D

N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VDG Drain-Gate Voltage 30 V
VGS Gate-Source Voltage - 30 V
ID Drain Current 50 mA
IGF Forward Gate Current 10 mA
Tstg Storage Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

BF244A / BF244B / BF244C
PD Total Device Dissipation 350 mW
Derate above 25°C 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W

1997 Fairchild Semiconductor Corporation

 BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 µA, VDS = 0 30 V
IGSS Gate Reverse Current VGS = - 20 V, VDS = 0 5.0 nA
VGSS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA - 0.5 - 8.0 V
VGS Gate-Source Voltage VDS = 15 V, ID = 200 µA 244A - 0.4 - 2.2 V
244B - 1.6 - 3.8 V
244C - 3.2 - 7.5 V

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 244A 2.0 6.5 mA
244B 6.0 15 mA
244C 12 25 mA

SMALL SIGNAL CHARACTERISTICS

yfs Forward Transfer Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz 3.0 6.5 mmhos
VDS = 15 V, VGS = 0, f = 200 MHz 5.6 mmhos
yos Output Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz 40 µmhos
yrs Reverse Transfer Admittance VDS = 15 V, VGS = 0, f = 200 MHz 1.0 µmhos
Ciss Input Capacitance VDS = 20 V, VGS = - 1.0 V 3.0 pF
Crss Reverse Transfer Capacitance VDS = 20 V, VGS = - 1.0 V, 0.7 pF
f = 1.0 MHz
Coss Output Capacitance VDS = 20 V, VGS = - 1.0 V, 0.9 pF
f = 1.0 MHz
NF Noise Figure VDS = 15 V, VGS = 0, RG = 1.0 kΩ, 1.5 dB
f = 100 MHz
F(Yfs) Cut-Off Frequency VDS = 15 V, VGS = 0 700 MHz
5

Typical Characteristics

Transfer Characteristics Channel Resistance vs Temperature

20 1000
V GS(OFF) = -4.5V V DS = 15V
r DS - DRAIN ON RESISTANCE (Ω )

TA = -55 C
O
500 V GS(OFF) = -1.0V
ID - DRAIN CURRENT (mA)

16
O
T A = +25 C 300
200 -2.5 V
12 T A = +125O C O
TA = -55 C -5.0V
O 100
T A = +25 C
8 -8.0 V
T A = +125O C 50
30
4 V DS = 100mV
20
-2.5 V V GS = 0 V
0 10
0 -1 -2 -3 -4 -5 -50 0 50 100 150
VGS - GATE-SOURCE VOLTAGE(V) T A - AMBIENT TEMPERATURE ( C)
 BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)

Typical Characteristics (continued)

Transconductance Common Drain-Source

Characteristics Characteristics
gfs -- TRANSCONDUCTANCE (mmhos)

7 O 5
TA = -55 C V = 15V O
5V
T A = +25 C -0. -1.0V
DS

I D -- DRAIN CURRENT (mA)

6 T A = +25 C
O
V
4 TYP V GS(OFF) = -5.0V -1.5
5 T A = +125O C -2.0V
0V
O
TA = -55 C =
4 O
3
S
-2.5V
T A = +25 C V G
O
3 T A = +125 C -3.0V
2
2 V GS(OFF) = -4.5V
-3.5V
1
1 -2.5 V -4.0V
0 0
0 -1 -2 -3 -4 -5 0 0.2 0.4 0.6 0.8 1
VGS- GATE-SOURCE VOLTAGE(V) VDS - DRAIN-SOURCE VOLTAGE(V)

Output Conductance vs Transconductance

Drain Current Parameter Interactions
gos -- OUTPUT CONDUCTANCE (u mhos)

gfs --- TRANSCONDUCTANCE ( mmhos )

r DS -- DRAIN "ON" RESISTANCE ( Ω )

O 100

-- DRAIN CURRENT ( mA )
T A = +25 C gfs, IDSS @ V DS = 15 V, V GS = 0 PULSE
V G S(OFF)
= -5.5V
f = 1.0 kHz 5.0V r DS @ VDS= 100mV, V GS = 0 50
20
V = 5v 10V 30
10 DG
15V
5 20
5 10 20V
15 10
20 15 10
20
1 5
V G S(OFF)
= -3.5V
0.5 3

DSS
V = -1.5V 20 2
G S(OFF) VGS(OFF) @ V GS = 15V, I D= 1nA

I
0.1 10 1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 -1 -2 -3 -5 -7 - 10
I D -- DRAIN CURRENT (mA) V - GATE-SOURCE VOLTAGE(V)
GS

Transconductance vs Noise Voltage vs Frequency

Drain Current V DG = 15V
gfs -- TRANSCONDUCTANCE (mmhos)

Hz )

10 BW = 6.0 Hz @ f = 10 Hz, 100 Hz

V GS(OFF) = - 1.5V = 0.2 f @ f > 1.0 kHz
O

5 TA = -55 C
e n- NOISE VOLTAGE ( nV/

O
T A = +25 C
T A = +125 O C
O
TA = -55 C
1
T A = +25 C
O
I D = 0.5 mA
10
0.5 T A = +125 O C
V GS(OFF) = - 5V 5
I D = 3 mA
V DG = 15V
f = 1.0 kHz
0.1 1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.03 0.1 0.3 1 3 10 30 100
I D - DRAIN CURRENT (mA) f -- FREQUENCY (kHz)
 BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)

Typical Characteristics (continued)

Capacitance vs Voltage Noise Figure Frequency

10 5
f = 0.1 - 1.0 MHz V DS = 15V
) -- CAPACITANCE (pF)

5 I = 5.0 mA

NF -- NOISE FIGURE (dB)

D
4
R g = 1.0 k Ω
C is ( V DS = 15 V) O
T A = +25 C
3
1 C rs ( V DS = 0 V)
2
rs
C is ( C

0 -5 -10 -15 -20 0

10 20 30 50 100 200 300 500 1000
VG S-- GATE-SOURCE VOLTAGE(V) f -- FREQUENCY (MHz)

Common Gate Characteristics

Output Admittance Input Admittance

Y ogs-- OUTPUT CONDUCTANCE (mmhos)

1
Yigs -- INPUT ADMITTANCE (mmhos)

V DS = 15V
V GS = 0
(CG)
b Og S (x 10)

g Ogs 10
g igs
5

V DS = 15V
V GS = 0
b igs
5
(CG)
1
100 200 300 500 700 1000 100 200 300 500 700 1000
f -- FREQUENCY (MHz) f -- FREQUENCY (MHz)

Forward Transadmittance Reverse Transadmittance

Yfgs -- FORWARD TRANSFER (mmhos)

10 1
Y rgs-- REVERSE TRANSFER (mmhos)

V DS = 15V
5 +g fgs V GS = 0
(CG)
g
rgs

-b fgs
1

- b rgs
V DS = 15V
V GS = 0
(CG)
100 200 300 500 700 1000
100 200 300 500 700 1000
f -- FREQUENCY (MHz )
f -- FREQUENCY (MHz)
 BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)

Common Source Characteristics

Output Admittance Input Admittance

-- OUTPUT CONDUCTANCE (mmhos)

1 10

Yis s -- INPUT ADMITTANCE (mmhos)

V DS = 15V
5 V GS = 0
(CS)
b OSS (x 10)

g OSS
1
b iss

V DS = 15V
g iss
V GS = 0
(CS)
OSS
Y

100 200 300 500 700 1000

100 200 300 500 700 1000
f -- FREQUENCY (MHz)
f -- FREQUENCY (MHz)

Forward Transadmittance Reverse Transadmittance

Yfss -- FORWARD TRANSFER (mmhos)

10 10
Y rss-- REVERSE TRANSFER (mmhos)

5 5
+g
fss

- b rss
-b fss
1 1

-g rss
( X 0.1)
V DS = 15V V DS = 15V
V GS = 0 V GS = 0

(CS) (CS)

100 200 300 500 700 1000 100 200 300 500 700 1000
f -- FREQUENCY (MHz) f -- FREQUENCY (MHz)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G
Mouser Electronics

Authorized Distributor

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