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SPECIFICATION (TENTATIVE) Device Nano __:_ Power MOSFET : ‘Type Nano :2SK2899-01R__ Spec. No. : : Nestedetesnscampencrc eae Fuji Electric Co.Ltd Matsumoto Factory Fuji Electric Co.,Ltd. Al 1/13 H4=004-07 1.Scope This specifies Fuji Power MOSFET 2SK2899-01R, 2.Construction N-Channel enhancement mode power MOSFET .Applications —_for Switching 4.0utview TO-3PF OutviewSee to 5/13 page S.Absolute Maximum Ratings at Tc=25'C (unless otherwise specified) Description [symbol | Characteristics Drain-Source Voltage Vos 60 [Continuous Drain Current |b £100 Pulsed Drain Current be +400 |Gate-Source Voltage Ves 20 [Maximum Avalanche Energy [Ea 1268.3 [Maximum Power Dissipation [Po 125 |Operating and Storage [Ten 150 [Femperature range [Tes -B5 to +150 Blala]sla|<]>|>/

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