IPW90R120C3

CoolMOS™ Power Transistor

Product Summary
Features
V DS @ T J=25°C 900 V
• Lowest figure-of-merit R ON x Qg
R DS(on),max @ T J=25°C 0.12 Ω
• Extreme dv/dt rated
Q g,typ 270 nC
• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

• Worldwide best R DS,on in TO247 PG-TO247

• Ultra low gate charge

CoolMOS™ 900V is designed for:

• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS

Type Package Marking

IPW90R120C3 PG-TO247 9R120C

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 36 A

T C=100 °C 23

Pulsed drain current2) I D,pulse T C=25 °C 96

Avalanche energy, single pulse E AS I D=8.8 A, V DD=50 V 1940 mJ

Avalanche energy, repetitive t AR2),3) E AR I D=8.8 A, V DD=50 V 2.9

Avalanche current, repetitive t AR2),3) I AR 8.8 A

MOSFET dv /dt ruggedness dv /dt V DS=0...400 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f>1 Hz) ±30

Power dissipation P tot T C=25 °C 417 W

Operating and storage temperature T J, T stg -55 ... 150 °C

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 1.0 page 1 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current IS 26 A

T C=25 °C
Diode pulse current 2) I S,pulse 81

Reverse diode dv /dt 4) dv /dt 4 V/ns

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.3 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

Soldering temperature, 1.6 mm (0.063 in.)

T sold - - 260 °C
wavesoldering only allowed at leads from case for 10 s

Electrical characteristics, at T J=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 900 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=2.9 mA 2.5 3 3.5

V DS=900 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 10 µA
T j=25 °C

V DS=900 V, V GS=0 V,
- 50 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=26 A,
Drain-source on-state resistance R DS(on) - 0.10 0.12 Ω
T j=25 °C

V GS=10 V, I D=26 A,
- 0.27 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 0.9 - Ω

Rev. 1.0 page 2 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 6800 - pF

Output capacitance C oss f =1 MHz - 330 -

Effective output capacitance, energy

C o(er) - 200 -
related 5)
V GS=0 V, V DS=0 V
to 500 V
Effective output capacitance, time
C o(tr) - 790 -
related 6)

Turn-on delay time t d(on) - 70 - ns

Rise time tr V DD=400 V, - 20 -

V GS=10 V, I D=26 A,
Turn-off delay time t d(off) R G=7.3 Ω - 400 -

Fall time tf - 25 -

Gate Charge Characteristics

Gate to source charge Q gs - 32 - nC

Gate to drain charge Q gd V DD=400 V, I D=26 A, - 115 -

Qg V GS=0 to 10 V
Gate charge total - 270 tbd

Gate plateau voltage V plateau - 4.7 - V

Reverse Diode

V GS=0 V, I F=26 A,
Diode forward voltage V SD - 0.8 1.2 V
T j=25 °C

Reverse recovery time t rr - 920 - ns

V R=400 V, I F=I S,
Reverse recovery charge Q rr - 30 - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - 65 - A

1)
J-STD20 and JESD22
2)
Pulse width t p limited by T J,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
ISD≤ID, di/dt ≤100 A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch

5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.

Rev. 1.0 page 3 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

450 102
1 µs
limited by on-state 10 µs
resistance
400 100 µs

350

1 ms
300 101

250
P tot [W]

10 ms

I D [A]
200 DC

150 100

100

50

0 10-1
0 25 50 75 100 125 150 1 10 100 1000
T C [°C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJC=f(tP) I D=f(V DS); T J=25 °C
parameter: D=t p/T parameter: V GS

100
20 V
8V

6V
100
0.5

10-1
0.2
Z thJC [K/W]

5.5 V
I D [A]

0.1

0.05

0.02 50
5V
10-2 0.01
single pulse

4.5 V

4V
-3
10 0
10-5 10-4 10-3 10-2 10-1 0 5 10 15 20 25
t p [s] V DS [V]

Rev. 1.0 page 4 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T J=150 °C R DS(on)=f(I D); T J=150 °C
parameter: V GS parameter: V GS

60 1
8V
6V
5.5 V
5V
10 V

0.75

40

4.5 V

R DS(on) [Ω]
I D [A]

0.5

5V
4.8 V
20 4.5 V
4V 4V
0.25

0 0
0 5 10 15 20 25 0 20 40 60 80
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T j); I D=26 A; V GS=10 V I D=f(V GS); V DS=20V
parameter: T J

0.35 150

0.3
25 °C

0.25
100
98 %
R DS(on) [Ω]

0.2
I D [A]

typ

0.15
150 °C
50
0.1

0.05

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]

Rev. 1.0 page 5 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=26 A pulsed I F=f(V SD)
parameter: V DD parameter: T J

10 102

25 °C, 98%

8
150 °C, 98%

400 V
101
6
720 V
V GS [V]

I F [A]
4
150 °C 25 °C
100

0 10-1
0 100 200 300 0 0.5 1 1.5
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T J); I D=8.8A; V DD=50 V V BR(DSS)=f(T J); I D=0.25 mA

2000 1050

1000
1500

950
V BR(DSS) [V]
E AS [mJ]

1000

900

500
850

0 800
25 50 75 100 125 150 -60 -20 20 60 100 140 180
T J [°C] T J [°C]

Rev. 1.0 page 6 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

104 30

Ciss

103

20
Coss

E oss [µJ]
C [pF]

102

10

101
Crss

100 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600
V DS [V] V DS [V]

Rev. 1.0 page 7 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3

Definition of diode switching characteristics

Rev. 1.0 page 8 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3

PG-TO247 Outlines

Dimensions in mm/inches

Rev. 1.0 page 9 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 IPW90R120C3

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 1.0 page 10 2008-07-30

Please note the new package dimensions arccording to PCN 2009-134-A

 Data sheet erratum
PCN 2009-134-A

New package outlines TO-247

1 New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet Erratum Rev. 2.0, 2010-02-01