IGBT

TRENCHSTOP™PerformancetechnologycopackedwithRAPID1
fastanti-paralleldiode

IKW50N60DTP
600VDuoPackIGBTanddiode
TRENCHSTOPTMPerformanceseries

Datasheet

IndustrialPowerControl
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

HighspeedIGBTinTrenchandFieldstoptechnology

Features: C

TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowturn-offlosses
•shorttailcurrent
•lowEMI G
•Verysoft,fastrecoveryanti-paralleldiode E
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

•drives
•solarinverters
•uninterruptiblepowersupplies
•converterswithmediumswitchingfrequency

G
C
E

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package
IKW50N60DTP 600V 50A 1.6V 175°C K50DDTP PG-TO247-3

2 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

3 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire IC 80.0 A
TC=100°C 61.0
Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 150.0 A
Turn off safe operating area
- 150.0 A
VCE≤600V,Tvj≤175°C,tp=1µs1)
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C IF 62.0 A
TC=100°C 39.0
Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 150.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000 tSC µs
Time between short circuits: ≥ 1.0s
Tvj=150°C 5
PowerdissipationTC=25°C 319.2
Ptot W
PowerdissipationTC=100°C 159.6
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
°C
wave soldering 1.6mm (0.063in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,
Rth(j-c) - 0.36 0.47 K/W
junction - case
Diode thermal resistance,
Rth(j-c) - 0.62 0.95 K/W
junction - case

1)
Defined by design. Not subject to production test.

4 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
VGE=15.0V,IC=50.0A
Collector-emitter saturation voltage VCEsat Tvj=25°C - 1.60 1.80 V
Tvj=175°C - 1.94 -
VGE=0V,IF=30.0A
Diode forward voltage VF Tvj=25°C - 1.45 1.70 V
Tvj=175°C - 1.39 -
Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current ICES Tvj=25°C - - 40 µA
Tvj=175°C - - -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 78.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 1950 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 109 - pF
Reverse transfer capacitance Cres - 67 -
VCC=480V,IC=50.0A,
Gate charge QG - 249.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Short circuit collector current VGE=15.0V,VCC≤400V,
Max. 1000 short circuits IC(SC) tSC≤5µs - - A
255
Time between short circuits: ≥ 1.0s Tvj=150°C

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) Tvj=25°C, - 20 - ns
Rise time tr VCC=400V,IC=50.0A, - 30 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=7.0Ω,RG(off)=7.0Ω, - 215 - ns
Fall time tf Lσ=32nH,Cσ=60pF - 18 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 1.53 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.85 - mJ
Total switching energy Ets - 2.38 - mJ

5 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

Diode reverse recovery time trr Tvj=25°C, - 115 - ns

Diode reverse recovery charge Qrr VR=400V, - 0.75 - µC
IF=30.0A,
Diode peak reverse recovery current Irrm diF/dt=870A/µs - 11.3 - A
Diode peak rate of fall of reverse
dirr/dt - 125 - A/µs
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) Tvj=175°C, - 21 - ns
Rise time tr VCC=400V,IC=50.0A, - 34 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=7.0Ω,RG(off)=7.0Ω, - 277 - ns
Fall time tf Lσ=32nH,Cσ=60pF - 55 - ns
Lσ,CσfromFig.E
Turn-on energy Eon Energy losses include “tail” and - 2.25 - mJ
Turn-off energy Eoff diode reverse recovery. - 1.39 - mJ
Total switching energy Ets - 3.64 - mJ

Diode reverse recovery time trr Tvj=175°C, - 194 - ns

Diode reverse recovery charge Qrr VR=400V, - 2.15 - µC
IF=30.0A,
Diode peak reverse recovery current Irrm diF/dt=870A/µs - 18.8 - A
Diode peak rate of fall of reverse
dirr/dt - 120 - A/µs
recoverycurrentduringtb

6 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

350

100 300
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
250
tp=1µs

10 200

150

1 100

50

0.1 0
0.1 1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofcase
(D=0,TC=25°C,Tj≤175°C;VGE=15V) temperature
(Tj≤175°C)

100 130

120
VGE=20V
110
15V
100
75
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

13V
90
11V
80
9V
70
7V
50
60

50

40
25
30

20

10

0 0
25 50 75 100 125 150 175 0 1 2 3 4
TC,CASETEMPERATURE[°C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase Figure 4. Typicaloutputcharacteristic
temperature (Tj=25°C)
(VGE≥15V,Tj≤175°C)

7 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

130 100
Tj=25°C
120 Tj=175°C
VGE=20V
110
15V
100
75
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
13V
90
11V
80
9V
70
7V
50
60

50

40
25
30

20

10

0 0
0 1 2 3 4 0 2 4 6 8 10
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tj=175°C) (VCE=20V)

3.5
IC=25A
IC=50A td(off)
VCE(sat),COLLECTOR-EMITTERSATURATION[V]

IC=100A tf
td(on)
tr
3.0
100
t,SWITCHINGTIMES[ns]

2.5

2.0
10

1.5

1.0 1
25 50 75 100 125 150 175 1 12 23 34 45 56 67 78 89 100
Tj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E)
8 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

1000
td(off)
tf
td(on)
tr

td(off)
tf
td(on)
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
tr
100

100

10 10
0 5 10 15 20 25 30 35 25 50 75 100 125 150 175
rG,GATERESISTOR[Ω] Tj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistor junctiontemperature
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (ind.load,VCE=400V,VGE=15/0V,IC=50A,
IC=50A,testcircuitinFig.E) rG=7Ω,testcircuitinFig.E)

6.0 11
typ. Eoff
min. 10 Eon
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max. Ets
5.0 9
E,SWITCHINGENERGYLOSSES[mJ]

8
4.0
7

6
3.0
5

4
2.0
3

1.0 2

0.0 0
25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100
Tj,JUNCTIONTEMPERATURE[°C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=0,8mA) (ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E)
9 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

8 4.0
Eoff Eoff
Eon Eon
7 Ets 3.5 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
6 3.0

5 2.5

4 2.0

3 1.5

2 1.0

1 0.5

0 0.0
0 5 10 15 20 25 30 35 25 50 75 100 125 150 175
rG,GATERESISTOR[Ω] Tj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor functionofjunctiontemperature
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V, (indload,VCE=400V,VGE=15/0V,IC=50A,
IC=50A,testcircuitinFig.E) rG=7Ω,testcircuitinFig.E)

6.0 16
Eoff 120V
Eon 480V
Ets 14
5.0
E,SWITCHINGENERGYLOSSES[mJ]

VGE,GATE-EMITTERVOLTAGE[V]

12

4.0
10

3.0 8

6
2.0

1.0
2

0.0 0
300 350 400 450 500 550 600 0 50 100 150 200 250
VCE,COLLECTOR-EMITTERVOLTAGE[V] QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=50A)
(ind.load,Tj=175°C,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
10 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

500

IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
450

400
1000
Cies
Coes 350
C,CAPACITANCE[pF]

Cres
300

250

200
100

150

100

50

10 0
0 10 20 30 12 13 14 15 16 17 18 19 20
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. Typicalshortcircuitcollectorcurrentasa
collector-emittervoltage functionofgate-emittervoltage
(VGE=0V,f=1MHz) (VCE≤400V,startatTj=150°C)

16
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

14
tSC,SHORTCIRCUITWITHSTANDTIME[µs]

0.1 D=0.5
12
0.2
0.1
10 0.05
0.02
0.01
8 0.01
single pulse

4 0.001

2
i: 1 2 3 4 5 6
ri[K/W]: 0.01216198 0.0542188 0.06849304 0.1687298 0.01315813 1.2E-3
τi[s]: 3.3E-5 2.0E-4 2.3E-3 0.01219856 0.09700046 1.874087

0 1E-4
10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
VGE,GATE-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 19. Shortcircuitwithstandtimeasafunctionof Figure 20. TypicalIGBTtransientthermalimpedance
gate-emittervoltage (D=tp/T)
(VCE≤400V,startatTj≤150°C)

11 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

300
Tj=25°C, IF = 30A
1 Tj=175°C, IF = 30A
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]

250

trr,REVERSERECOVERYTIME[ns]
D=0.5
0.2
0.1
0.1
0.05
200
0.02
0.01
0.01 single pulse
150

0.001
100

i: 1 2 3 4 5 6
ri[K/W]: 0.03101824 0.1189354 0.1745904 0.268737 0.0286638 1.4E-3
τi[s]: 2.9E-5 1.7E-4 1.7E-3 9.2E-3 0.0630565 1.832934

1E-4 50
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 700 800 900 1000 1100 1200 1300
tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicaldiodetransientthermalimpedance Figure 22. Typicalreverserecoverytimeasafunction
asafunctionofpulsewidth ofdiodecurrentslope
(D=tp/T) (VR=400V)

3.0 30
Tj=25°C, IF = 30A Tj=25°C, IF = 30A
Tj=175°C, IF = 30A Tj=175°C, IF = 30A

2.5 25
Qrr,REVERSERECOVERYCHARGE[µC]

Irr,REVERSERECOVERYCURRENT[A]

2.0 20

1.5 15

1.0 10

0.5 5

0.0 0
600 700 800 900 1000 1100 1200 1300 600 700 800 900 1000 1100 1200 1300
diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverychargeasa Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

12 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

0 100
Tj=25°C, IF = 30A Tj=25°C
Tj=175°C, IF = 30A Tj=175°C
90

80
dIrr/dt,diodepeakrateoffallofIrr[A/µs]

-50

IF,FORWARDCURRENT[A]
70

60

-100 50

40

30
-150
20

10

-200 0
600 700 800 900 1000 1100 1200 1300 0.0 0.5 1.0 1.5 2.0 2.5
diF/dt,DIODECURRENTSLOPE[A/µs] VF,FORWARDVOLTAGE[V]
Figure 25. Typicaldiodepeakrateoffallofreverse Figure 26. Typicaldiodeforwardcurrentasafunction
recoverycurrentasafunctionofdiode offorwardvoltage
currentslope
(VR=400V)

2.0
IF=15A
IF=30A
IF=60A
1.8
VF,FORWARDVOLTAGE[V]

1.6

1.4

1.2

1.0

0.8
25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature

13 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

Package Drawing PG-TO247-3

14 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformance Series

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

15 Rev.2.1,2016-02-08
 IKW50N60DTP
TRENCHSTOPTMPerformanceSeries

RevisionHistory
IKW50N60DTP

Revision:2016-02-08,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 - Release final datasheet

Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2016.
AllRightsReserved.

ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.

Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.

Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
InfineonTechnologiesoffice(www.infineon.com).

PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive
ElectronicsCouncil.

Warnings
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion
pleasecontactyournearestInfineonTechnologiesoffice.

ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized
representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea
failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.

16 Rev.2.1,2016-02-08