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IRF510
IRF510
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt rating
VDS (V) 100
• Repetitive avalanche rated Available
RDS(on) () VGS = 10 V 0.54
• 175 °C operating temperature Available
Qg max. (nC) 8.3
• Fast switching
Qgs (nC) 2.3
• Ease of paralleling
Qgd (nC) 3.8
• Simple drive requirements
Configuration Single
• Material categorization: for definitions of compliance
D please see www.vishay.com/doc?99912
TO-220AB Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
G Please see the information / tables in this datasheet for details.
DESCRIPTION
S
D Third generation power MOSFETs from Vishay provide the
G S designer with the best combination of fast switching,
N-Channel MOSFET
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
7.0 V
6.0 V
5.5 V 2.0
(Normalized)
5.0 V
Bottom 4.5 V
1.5
100
1.0
4.5 V
0.5
20 µs pulse width
TC = 25 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
91015_01 VDS, Drain-to-Source Voltage (V) 91015_04 TJ, Junction Temperature (°C)
VGS 400
VGS = 0 V, f = 1 MHz
101 Top 15 V Ciss = Cgs + Cgd, Cds shorted
10 V Crss = Cgd
8.0 V 320
Coss = Cds + Cgd
ID, Drain Current (A)
7.0 V
Capacitance (pF)
6.0 V
5.5 V 240
5.0 V Ciss
100 Bottom 4.5 V 4.5 V
160 Coss
80
20 µs pulse width Crss
TC = 175 °C
0
10-1 100 101 100 101
91015_02 VDS, Drain-to-Source Voltage (V) 91015_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
101 ID = 5.6 A
25 °C
VGS, Gate-to-Source Voltage (V)
VDS = 80 V
16
ID, Drain Current (A)
175 °C VDS = 50 V
VDS = 20 V
12
100
4
20 µs pulse width For test circuit
10-1 VDS = 50 V
see figure 13
0
4 5 6 7 8 9 10 0 2 4 6 8 10
91015_03 VGS, Gate-to-Source Voltage (V) 91015_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
6.0
ISD, Reverse Drain Current (A)
175 °C 5.0
2.0
10-1 1.0
VGS = 0 V
0.0
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 175
91015_07 VSD, Source-to-Drain Voltage (V) 91015_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD
102 VDS
Operation in this area limited
5 by RDS(on) VGS
D.U.T.
2 RG
ID, Drain Current (A)
+
10 100 µs - VDD
5
10 V
1 ms Pulse width ≤ 1 µs
2
Duty factor ≤ 0.1 %
1 10 ms
5 Fig. 10a - Switching Time Test Circuit
TC = 25 °C
2 TJ = 175 °C VDS
single pulse
0.1 2 5 90 %
2 5 2 5
1 10 102 103
10
Thermal Response (ZthJC)
0 - 0.5
1
0.2
0.1 PDM
0.05
0.02
0.1 0.01 t1
Single pulse
t2
(thermal response)
Notes:
1. Duty factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10
L
VDS
Vary tp to obtain QG
10 V
required IAS
Charge
Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
VDS
50 kΩ
tp 12 V 0.2 µF
VDD 0.3 µF
+
VDS
D.U.T. -
VDS
VGS
3 mA
IAS
IG ID
Current sampling resistors
Fig. 12b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit
300
ID
EAS, Single Pulse Energy (mJ)
Top 2.3 A
250 4.0 A
Bottom 5.6 A
200
150
100
50
VDD = 25 V
0
25 50 75 100 125 150 175
- +
-
Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test
VGS = 10 Va
Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 % ISD
Note
a. VGS = 5 V for logic level devices
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE Xi’an
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