MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2084 isa silicon NPN epitaxial planar type transistor designed OUTLINE DRAWING ——dinesrsionm for RF power amplifiers in VHF band mobile radio applications. crear £9225 ov guar FEATURES 7 . © High power gain: Gpe 2 8.848 aus am [a @Vcc = 13.5V, Po= 15W, f= 175MH2 . Emitter balastd constuction and god metallization for high aS i 3 reliability and good performances. aber TP eNna? ‘© Low thermal resistance ceramic package with flange wes Tat a - Ability of withstanding more than 20:1 load VSWR when eusueax]| SJ, 2, operated at Vee = 18.2V, Po = TW, f= 175MM ‘+ Low intermodulation estortion: IMD-303Dcltyp) @1SWPEP Lamar | APPLICATION = 10 to 14 watts output linear power apliiers in VHF band. ems a 5 ——3 i 4 ze tt 3] |__sest i © couscron @ ouiren Funes @ esse @ Barren cues SIE ® sn eurens ABSOLUTE MAXIMUM RATINGS (12~2s° ues onernsesptes) Sree Paar T Coa cy va Vesa | Cacao boon ev Wego | Galectartoonit vine a 7 v Po | cater divonton : muse 0 w a os 75 rt | pga nc - i a Fie 5 ELECTRICAL CHARACTERISTICS (1o=25 wns stemsesntes) seme ronan Teens oe ust wm [We | ae Teamcao| Erie ataoor aa Tenia, ied a 1 7 ‘ores Coletr tbe toon ane tg=0na, 1e=d v Wesmceo| Colic eit renaoen ve 1e= BIA, Ree=™ 7 v "coo | Colerain Veg @8V.1e=0 [2 [wa a Ves=¥V, 1¢=0 zs [on hee Oe toate gt Vee 10V, igmO.A oe ee veomt3.5v,Pnnay.tmrisune tS} 1S * Note sDie Pres, day tor uals, ange Hit 2a cordon ae uct chang Nov. 97 MITSUBISHI ELECTRICMITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR TYPE TEST CIRCUIT tevez ZigmsnQ 1 S0DF Zour=son ° TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION Vs. COLLECTOR CURRENT VS. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE SSIPATION Pe tt 2 aa] ere a ar ) AMBIENT TEWPERATURE Ty 0) COLLECTOR To EMITTER VOLTAGE vce V1 COLLECTOR TO EMITTER BREAKDOWN COLLECTOR CURRENT vs. VOLTAGE VS. BASE TO EMITTER VOLTAGE BASE TO EMITTER RESISTANCE Crom abe T “ 2 eof wooxzooxaat ial Nov. 97MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR TYPE COLLECTOR ouTeUT CAPACITANCE VS. COLLECTOR Dc CURRENT GAIN vs. TO BASE VOLTAGE COLLECTOR CURRENT CHARACTERISTICS Re T z T sof Yee = tov | e I 8 2 t g T £ Ce z | a = 100 —~| | a | | x za J i 8 a 5 | g a 1 ] s | & al | A | 1230108 700305 TORENT Hono g ee a COLLECTOR CURRENT f ima) COLLECTOR TO BASE VOLTAGE Ven) OUTPUT POWER, COLLECTOR OUTPUT POWER vs. EFFICIENCY VS. INPUT POWER COLLECTOR SUPPLY VOLTAGE — 100 co rt 5 ee 2 Seioemiee : i g + — rea IN CASE AB OPERATING OUTPUT POWER, COLLECTOR THIRD ORDER INTERMODULATION CURRENT VS. INPUT POWER DISTORTION VS, OUTPUT POWER af Teaae ™ T Tear obrerrsmie EE rote de 3 sofecnn sy sae sfen=sw se 8 © 2 sSustwenr fells ee eget 2 os| ns 2 OBE oa a2 # He |_| “deamar az os 1 Se ree eeenneec) INPUT POWER Pig OUTPUT POWER fo (PEP vo Nov." 97 eRe