I HC QUC GIA THNH PH H CH MINH

TRNG I HC BCH KHOA TP HCM

KHOA IN-IN T

BI TP QUI TRNH SN XUT IC & MEMS

GVHD:

TS. Hong Trang

HVTH:

Nguyn Vit Tin

11140064

Nguyn Thanh Lim

11140028

Trn Trng Hiu

11140016

Bi tp qui trnh sn xut IC & MEMS

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MC LC
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MC LC..................................................................................................................... 1
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CHAPTER 1: AN OVERVIEW OF MICROELECTRONIC FABRICATION..............................2
CHAPTER 2: LITHOGRAPHY.........................................................................................9
CHAPTER 3: THERMAL OXIDATION OF SILICON.........................................................11
CHAPTER 4: DIFFUSION............................................................................................23

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CHAPTER 1: AN OVERVIEW OF MICROELECTRONIC FABRICATION

1.1
Cc thit b c IC chips trong cuc sng hng ngy:
- computer
- telephone
- kim t in
- calculator
- televison
- remote of televison
- radio
- mp3 player
- mp4 player
- washing machine
- USB
- ipad

1.2
a)
NG KNH
(mm)

DIN TCH (mm2)

25

490.625

50

1962.5

75

4415.625

T L

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100

7850

16

125

12265.625

25

150

17662.5

36

200

31400

64

300

70650

144

450

158962.5

324

b) S dice (1mm x 1mm) c trn wafer 450 mm l: 158962.5/1 = 158962

c) S dice (25mm x 25mm) c trn wafer 450 mm l: 158962.5/(25*25) = 254

1.3
a) S dice (20mm x 20mm) c trn wafer 300 mm l: 70650/(20*20) = 176
b) Tnh chnh xc s dice c trn wafer 300 mm:
- Chia wafer lm 4 phn
- Tnh s dice trn 1 wafer
+ Chia wafer thnh tng ct rng.

X2 + Y2 = (bn knh wafer)2

X (mm)

20

40

60

80

100

Y (mm)

15

148.660

144.568

137.477

126.885

111.803

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120 140
90 53.85165

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0
s dice trn 1
ct = Y/20

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- Tng s dice l (7+7+6+6+5+4+2)*4 = 148

1.4
B = 19.97*100.1977(Y-1960) bit/chp
Vi Y=2020 => B = 1.45338E+13

1.5
N = 1027*100.1505(Y-1970) transitor
Vi Y=2020 => N = 34400950602

1.6
a)
B1 = 19.97*100.1977(Y1-1960)
B2 = 19.97*100.1977(Y2-1960)
Vi B2 = 2B1
B2: B1 = 2 <=> 100.1977(Y2 Y1) = 2 => Y2 Y1 = 0.495 nm

b)
B1 = 19.97*100.1977(Y1-1960)
B2 = 19.97*100.1977(Y2-1960)
Vi B2 = 10B1

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B2: B1 = 10 <=> 100.1977(Y2 Y1) = 10 => Y2 Y1 = 5.06 nm

1.7
a)
N1 = 1027*100.1505(Y1-1970)
N2 = 1027*100.1505(Y2-1970)
Vi N2 = 2N1
N2: N1 = 2 <=> 100.1505(Y2 Y1) = 2 => Y2 Y1 = 2 nm
b)
N1 = 1027*100.1505(Y1-1970)
N2 = 1027*100.1505(Y2-1970)
Vi N2 = 10N1
N2: N1 = 10 <=> 100.1505(Y2 Y1) = 10 => Y2 Y1 = 6.64 nm

1.8
F = 8.214*10-0.06079(Y1-1970) m
Vi Y = 2020 => F = 7.5*10-3 m

1.9
P ca 1 vacumm tube = 0.5 W
=> P ca 300 triu vacumm tube = 0.5*300.106 = 150.106 W
=> I = P/U = 150.106/220 = 681818,2 (A)

1.10
a)
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S line = 18 mm/(2*0.25 m ) = 36000

Chiu di =36000*25 mm = 900000 mm

b)
S line =18mm: (2*0.1 m ) = 90000
Chiu di =90000*25 mm = 2250000 mm

1.11
S dice (10mm x 10mm) c trn wafer 200 mm
X (mm)

Y (mm)

100

10

20

30

40

50

60

70

60

43.5
8899 0

4 0

99.49874

97.97
959

95.39
392

91.65
151

86.60
254

80

71.4
142
8

s dice trn 1
ct = Y/10

80

90 100

- Tng s dice l (9+9+9+9+8+8+7+6+4+0)*4 = 276

1.12
a)
- S dice (10mm x 10mm) c trn wafer 150 mm

X (mm)
Y (mm)
s dice trn 1 ct
= Y/10

10

20

30

40

50

75

74.3303
4

72.2841
6

68.7386
4

63.4428
9

55.901
7

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60 70
26.9258
45 2
4 2

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=> Tng s dice l (7+7+6+6+5+4+2)*4 = 148

- Tng s good dice l = 148 * 0.35 = 51

- Gi thnh 1 good dice l = 1000/51 = 19.60784 USD

b)
- S dice (10mm x 10mm) c trn wafer 200 mm

X (mm)

0
10
0

Y (mm)
s dice trn 1 ct
= Y/10

10

20

30

40

60

70

99.49
874

97.97
959

95.39
392

91.65
151

86.60
254

80

71.4
142
8

=> Tng s dice l (9+9+9+9+8+8+7+6+4+0)*4 = 276

- Tng s good dice l = 276 * 0.35 = 96

- Gi thnh 1 good dice l = 1000/96 = 10.41667 USD

1.13

( m )

50

S TRANSISTOR = (5*5 mm): (25 2 )

1000000

0.25

16000000

0.1

100000000

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80

90

100

60

43.5
8899

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CHAPTER 2: LITHOGRAPHY
2.1
- 25 masks
- 1 mask th c x % good dice
a) => % good dice sau 25 masks l 30 % x25 = 0.3 => x = 0.953
b) => % good dice sau 25 masks l 70 % x25 = 0.7 => x = 0.9858

2.5
F = 180 nm

= 193 nm
m F =

DF =

0.5
=> NA = 0.536
NA

0.6
2
2 =(0.6*193): 0.563 =403 nm
NA

2.6
a)
F = 0.25 m
NA = 1
m F =

DF =

0.5
=> = 0.5 m
NA

0.6
= (0.6*0.5): 12 = 0.3 m
NA2
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b)
F = 0.25 m
NA = 0.5
m F =

DF =

0.5
=> = 0.25 m
NA

0.6
2
m
2 = (0.6*0.25): 0.5 = 0.6
NA

2.7

= 193 nm
M F =

0.5 0.5*193
0.5
=
= 96.5 nm
=> Fmin =
NAmax
1
NA

2.8

= 13 nm
M F =

0.5 0.5*13
0.5
=
= 6.5 nm
=> Fmin =
NAmax
1
NA

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CHAPTER 3: THERMAL OXIDATION OF SILICON

Dng cng thc 3.12 v bng 3.1 ta tnh c cc gi tr B/A v B ng vi cc trng hp c th
trong bi ton.

3.1
Grow 100 nm silicon <100>
Wet oxygen at 10000C
B/A = 0.7422569 um/hr
B = 0.3151124 um2/hr
=> t = 0.166458946 h

Grow 100 nm silicon <100>

Dry oxygen at 10000C
B/A = 0.044783 um/hr
B = 0.0104205 um2/hr
=> t = 3.192642087 h
Phng php dry oxygen dng tt hn do thi gian thc hin di hn d kim sot hn.

3.2
Grow 1.2 um silicon <100>
Wet oxygen at 11000C
B/A = 0.044783 um/hr
B = 0.0104205 um2/hr
Thi gian thc hin grow 0.4 um:
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=> t0.4 = 0.440665677 h

Thi gian thc hin 0.4 um u tin:
=> t1 = t0.4 = 0.440665677 h
Thi gian thc hin grow 0.8 um:
=> t0.8 = 1.486347018 h
Thi gian thc hin 0.4 um th hai:
=> t2 = t0.8 t0.4 = 1.045681341 h
Thi gian thc hin grow 1.2 um:
=> t1.2 = 1.486347018 h
Thi gian thc hin 0.4 um th ba:
=> t3 = t1.2 t0.8 = 1.650697005 h

3.4
Grow 3 um silicon <100>
Wet oxygen at 11500C
B/A = 5.3222307 um/hr
B = 0.6667881 um2/hr
Thi gian thc hin grow 1 um:
=> t1um = 1.687617917 h
Thi gian thc hin 1 um u tin:
=> t1 = t1um = 1.687617917 h
Thi gian thc hin grow 2 um:
=> t2um = 6.374689383 h
Thi gian thc hin 1 um th hai:
=> t2 = t2um t1um = 4.687071466 h
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Thi gian thc hin grow 3 um:

=> t3um = 14.0612144 h
Thi gian thc hin 1 um th ba:
=> t3 = t3um t2um = 7.686525015 h

3.5
Grow 10 nm silicon <100>
Wet oxygen at 8500C
B/A = 0.0611596 um/hr
B = 0.1218941 um2/hr
=> t = 0.164327007 h

Grow 10 nm silicon <100>

Wet oxygen at 10000C
B/A = 0.7422569 um/hr
B = 0.3151124 um2/hr
=> t = 0.013789771 h
Chn trng hp nhit 8500C do thi gian thc hin di hn trng hp nhit 10000C.

3.6
Grow 2 um silicon <100>
Wet oxygen at 11500C
B/A = 5.3222307 um/hr
B = 0.6667881 um2/hr
=> t = 6.374689383 h
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3.7
Grow 1 um silicon <100>
Wet oxygen at 10500C
B/A = 1.5041447 um/hr
B = 0.4122632 um2/hr
=> t = 3.090464422 h

Grow 1 um silicon <100>

Dry oxygen at 10500C
B/A = 0.0892004 um/hr
B = 0.0159194 um2/hr
=> t = 74.02695349 h

3.8
a) Grow 1 um silicon <100>
A dry-wet-dry oxidation cycle of 30 min/ 120 min/ 30 min at 11000C
Dry oxidation silicon <100>
Nhit (K) = 1373
B/A = 0.168976119322279
B = 0.0235811469716845
Thi gian (hour) = 0.5
dy (micromet) = 0.0592945095663939

Qui i v trng hp: Wet oxidation silicon <100>

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Nhit (K) = 1373

B/A = 2.89523914605347
B = 0.528911925641599
dy (micromet) = 0.0592945095663939
Thi gian (hour) = 0.0271273090509448

Wet oxidation silicon <100>

Nhit (K) = 1373
B/A = 2.89523914605347
B = 0.528911925641599
Thi gian (hour) = 2.02712730905094
dy (micromet) = 0.948136622027622

Qui i v trng hp: Dry oxidation silicon <100>

Nhit (K) = 1373
B/A = 0.168976119322279
B = 0.0235811469716845
dy (micromet) = 0.948136622027622
Thi gian (hour) = 43.7331776968616

Dry oxidation silicon <100>

Nhit (K) = 1373
B/A = 0.168976119322279
B = 0.0235811469716845
Thi gian (hour) = 44.2331776968616
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dy (micromet) = 0.953911781025885

b) Grow 1 um silicon <111>

A dry-wet-dry oxidation cycle of 30 min/ 120 min/ 30 min at 11000C
Dry oxidation silicon <111>
Nhit (K) = 1373
B/A = 0.283752351314771
B = 0.0235811469716845
Thi gian (hour) = 0.5
dy (micromet) = 0.0747110283049352

Qui i v trng hp: Wet oxidation silicon <111>

Nhit (K) = 1373
B/A = 4.86519567841974
B = 0.528911925641599
dy (micromet) = 0.0747110283049352
Thi gian (hour) = 0.025909468861561

Wet oxidation silicon <111>

Nhit (K) = 1373
B/A = 4.86519567841974
B = 0.528911925641599
Thi gian (hour) = 2.02590946886156
dy (micromet) = 0.982215698293071

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Qui i v trng hp: Dry oxidation silicon <111>

Nhit (K) = 1373
B/A = 0.283752351314771
B = 0.0235811469716845
dy (micromet) = 0.982215698293071
Thi gian (hour) = 44.3733460352091

Dry oxidation silicon <111>

Nhit (K) = 1373
B/A = 0.283752351314771
B = 0.0235811469716845
Thi gian (hour) = 44.8733460352091
dy (micromet) = 0.987958014364775

3.9
Wet oxidation silicon <100>
Nhit (K) = 1373
B/A = 2.89523914605347
B = 0.528911925641599
Thi gian (hour) = 5
dy (micromet) = 1.53743177824182

Qui i v trng hp: Dry oxidation silicon <100>

Nhit (K) = 1273
B/A = 0.0447829762860665
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B = 0.01042045811596
dy (micromet) = 1.53743177824182
Thi gian (hour) = 261.163018235897

Dry oxidation silicon <100>

Nhit (K) = 1273
B/A = 0.0447829762860665
B = 0.01042045811596
Thi gian (hour) = 262.163018235897
dy (micromet) = 1.54057928821556

3.10
Wet oxidation silicon <111>
Nhit (K) = 1373
B/A = 4.86519567841974
B = 0.528911925641599
Thi gian (hour) = 5
dy (micromet) = 1.57276170116192

Qui i v trng hp: Dry oxidation silicon <111>

Nhit (K) = 1373
B/A = 0.283752351314771
B = 0.0235811469716845
Thi gian (hour) = 1.57276170116192
dy (micromet) = 110.439208999943

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Dry oxidation silicon <111>

Nhit (K) = 1373
B/A = 0.283752351314771
B = 0.0235811469716845
Thi gian (hour) = 111.439208999943
dy (micromet) = 1.58004901992165

3.11

Gi t2 l thi gian grow oxide t 0 200 nm.

Gi t3 l thi gian grow oxide t 0 300 nm.
= 300nm
= 200 nm

= 360nm mu yellow green

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V 300 nm mu blue to violet blue

3.12

Ta c:
= 1 um => mu carnation pink.
Thi gian grow 1 um l t => thi gian grow bn ngoi square window l 2t.
=

= 1.41 um => mu orange.

3.13
Wet oxidation silicon <100>
Nhit (K) = 1373
B/A = 2.89523914605347
B = 0.528911925641599
=> Thi gian grow 04 um l:
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t1 = 0.440665676697385
=> Thi gian grow 1.4 um l:
t2 = 4.18927339935428
=> Thi gian cn thc hin l:
t = t2 t1 = 3.748607723 h
=> Mu orange

3.14
4h for boron diffusion at 11500C tra th Fig 3.10 ta c lp oxide c dy l 0.07 um.
1h for phosphorus diffusion at 10500C tra th Fig 3.10 ta c lp oxide c dy l 1.5 um.

3.15
15h for boron diffusion at 11500C tra th Fig 3.10 ta c lp oxide c dy l 0.15 um.

3.16
20h for phosphorus diffusion at 12000C tra th Fig 3.10 ta c lp oxide c dy l 3.5
um.

3.17
Lp SiO2 dy 1um c mu l carnation pink.
Lp SiO2 dy 2um c mu l carnation pink.

3.18
2X0 = k/n X0 = k/2n
X0 = k*0.57um/2*1.46
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X0 < 1.5 um
=> k < 7.68
Vi k = 1: X0 = 0.2 um mu light gold or yellow; slightly metallic.
Vi k = 2: X0 = 0.39 um mu yellow.
Vi k = 3: X0 = 0.58 um mu light orange or yellow to pink.
Vi k = 4: X0 = 0.78 um mu yellowish.
Vi k = 5: X0 = 0.97 um mu yellow to yellowish.
Vi k = 6: X0 = 1.18 um mu violet.
Vi k = 7: X0 = 1.4 um mu orange.

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CHAPTER 4: DIFFUSION
4.1
a)
x j = 2 Dt .ln(

N0
)
NB

Dt = 10-8 cm2
N0 = 5.1018 cm3
NB = 1015 cm3
=> xj = 5.8*10-4 cm

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