Bulletin PD -2.338 rev.

B 01/04

HFA25PB60
HEXFRED TM
Ultrafast, Soft Recovery Diode

Features BASE
CATHODE
VR = 600V
• Ultrafast Recovery VF(typ.)* = 1.3V
• Ultrasoft Recovery 4

• Very Low IRRM IF(AV) = 25A

• Very Low Qrr Qrr (typ.)= 112nC
• Specified at Operating Conditions 2
IRRM = 10A
Benefits
trr(typ.) = 23ns
• Reduced RFI and EMI 1 3
ANODE
di(rec)M/dt (typ.) = 250A/µs
CATHODE
• Reduced Power Loss in Diode and Switching 2

Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count

Description
International Rectifier's HFA25PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With TO-247AC (Modified)
basic ratings of 600 volts and 25 amps continuous current, the HFA25PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency is
needed.

Absolute Maximum Ratings

Parameter Max Units
VR Cathode-to-Anode Voltage 600 V
IF @ TC = 25°C Continuous Forward Current
IF @ TC = 100°C Continuous Forward Current 25
A
IFSM Single Pulse Forward Current 225
IFRM Maximum Repetitive Forward Current 100
PD @ TC = 25°C Maximum Power Dissipation 151
W
PD @ TC = 100°C Maximum Power Dissipation 60
TJ Operating Junction and
-55 to +150 C
TSTG Storage Temperature Range

* 125°C

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HFA25PB60
Bulletin PD-2.338 rev. B 01/04

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min Typ Max Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 ––– ––– V IR = 100µA
––– 1.3 1.7 IF = 25A
VFM Max Forward Voltage ––– 1.5 2.0 V IF = 50A See Fig. 1
––– 1.3 1.7 IF = 25A, TJ = 125°C
––– 1.5 20 VR = VR Rated See Fig. 2
IRM Max Reverse Leakage Current µA
––– 600 2000 TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance ––– 55 100 pF VR = 200V See Fig. 3
Measured lead to lead 5mm from
LS Series Inductance ––– 12 ––– nH
package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min Typ Max Units Test Conditions
trr Reverse Recovery Time ––– 23 ––– IF = 1.0A, dif/dt = 200A/µs, V R = 30V
trr1 See Fig. 5 & 10 ––– 50 75 ns TJ = 25°C
trr2 ––– 105 160 TJ = 125°C I F = 25A
IRRM1 Peak Recovery Current ––– 4.5 10 A TJ = 25°C
IRRM2 See Fig. 6 & 10 ––– 8.0 15 TJ = 125°C V R = 200V
Qrr1 Reverse Recovery Charge ––– 112 375 TJ = 25°C
nC
Qrr2 See Fig. 7 & 10 ––– 420 1200 TJ = 125°C dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current ––– 250 ––– TJ = 25°C
A/µs
di(rec)M/dt2 During tb See Fig. 8 & 10 ––– 160 ––– TJ = 125°C

Thermal - Mechanical Characteristics

Parameter Min Typ Max Units
Tlead Lead Temperature –––– –––– 300 °C
RthJC Thermal Resistance, Junction to Case –––– –––– 0.83
RthJA‚ Thermal Resistance, Junction to Ambient –––– –––– 40 K/W
RthCSƒ Thermal Resistance, Case to Heat Sink –––– 0.25 ––––
–––– 6.0 –––– g
Wt Weight
–––– 0.21 –––– (oz)
6.0 –––– 12 Kg-cm
Mounting Torque
5.0 –––– 10 lbf•in

 0.063 in. from Case (1.6mm) for 10 sec

‚ Typical Socket Mount
ƒ Mounting Surface, Flat, Smooth and Greased

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 HFA25PB60
Bulletin PD-2.338 rev. B 01/04

100 10000

TJ = 150°C

Reverse Current - IR (µA)

1000

100 TJ = 125°C

10
Instantaneous Forward Current - IF (A)

1
TJ = 150°C

T = 125°C 0.1 TJ = 25°C

J

T = 25°C 0.01
J
10 0 100 200 300 400 500 600

Reverse Voltage - V R (V)

Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1000
Junction Capacitance -CT (pF)

TJ = 25°C

100

1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V FM (V)

Fig. 1 - Maximum Forward Voltage Drop 10

vs. Instantaneous Forward Current 1 10 100 1000
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

0.05 PDM

t1
0.02
SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics

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HFA25PB60
Bulletin PD-2.338 rev. B 01/04

140 30
I F = 50A VR = 200V
TJ = 125°C
I F = 25A TJ = 25°C
120
25
I F = 10A

100 I F = 50A
20
IF = 25A
trr- (nC)

Irr- ( A)
80
I F = 10A
15

60

10
40

20 5
VR = 200V
TJ = 125°C
TJ = 25°C
0 0
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt

1400 10000
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
1200

I F = 50A
1000 I F = 50A
I F = 25A
di (rec) M/dt- (A /µs)

I F = 25A
I F = 10A
Qrr- (nC)

800
IF = 10A
1000

600

400

200

0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt

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 HFA25PB60
Bulletin PD-2.338 rev. B 01/04

t rr
IF
ta tb
0
REVERSE RECOVERY CIRCUIT
4
Q rr
VR = 200V 2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.01 Ω
0.75 I RRM
L = 70µH
D.U.T.
1 di f /dt

1. dif/dt - Rate of change of current 4. Q rr - Area under curve defined by trr

D and I RRM
dif/dt through zero crossing
ADJUST t rr X IRRM
G IRFP250
2. I RRM - Peak reverse recovery current Qrr =
2
S 3. trr - Reverse recovery time measured
from zero crossing point of negative 5. di (rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of t rr
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current

Fig. 9 - Reverse Recovery Parameter Test Fig. 10 - Reverse Recovery Waveform and
Circuit Definitions

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HFA25PB60
Bulletin PD-2.338 rev. B 01/04

Conforms to JEDEC Outline TO-247AC MODIFIED

Dimensions in millimeters and inches

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/04
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