Basic Electronics <EC21101)

End Semester Examination

Spring 2011 Full marks: 80
Answer all questions. The mark for each question is indicated to the right.
1. (A) 1n the circuit of Figure 1, let V
0
=10V, R=1 kn with the breakdown voltage of
zener diode as 6 V. Determine /z if (a) RL= 100 Q and (b) RL=5 kn
R
Vo
Figure 1
(B) Use the piece-wise linear model of diode (shown in Figure 2) to determine
(7)
the current through the diode D
2
and the voltage V
1
Assume Vy= 0.7 V, R=300!l,
Ic=3mA, VJF().3V, Rt (forward resistance of the diode)= 0 and R,. (reverse
resistance of the diode) = oc.
Vt R=300fl
/c=3 rnA
Figure 2
(5)
(C) In the circuits of Figure 3(a) and 3(b), assume a load resistance RL to be connected
across the output terminals. Let Vr1V, R=l k!l, RL= 9 k!l, VF 1.5V and Vy= 0
V for the diode. Determine the voltages at the output terminals for both circuits.
(1.)
R
- - - - - ~ ~ - - - - ~ - - ~
VI
Output
VI
Output




Figure 3(a)
Figure 3(b)
(8)
2. (A) The transistor in the circuit in Figure 4 has parameters Vm (threshold voltage)=
0.8V and Kn (conduction parameter) =0.25 mA/V
2
Determine the power
dissipation in the MOSFET when (a) Vvv=4V, Rv=l kQ and (b) Vvv=5V, Rv=3
k.Q. What is the operating bias region: for each condition?
'.
Ro
Figure 4
(B)The open loop gain ofthe OPAMP (shown in Figure 5) is 10
3

Determine the output voltage V
0
when V F2V.
10kn
10kn
Vo
100kn
100kn
Figure 5
'.
(5)
(10)
(C) Calculate the small signal voltage gain of the circuit shown in Figure 6, for
MOSFET transconductance parameter gm= 1 mAIV, MOSFET output resistance
r
0
=50 kn and RD=10 kQ.
Figure 6
(5)
3. (A) Determine the de current /z through the circuit shown in Figure 7. Both the
transistors have threshold voltage Vm = 1 V, 1= 0 and conduction parameter
Kn (L-MOSFET) = 10 J1AN
2
, Kn (D-MOSFET)= 50 J1AN
2
Also determine V
0
for VF5V.
Voo=5V-
Vo
Figure 7
(10)
(B) Calculate the bias current of M
1
in Figure 8. Assume process conduction
parameter kn=lOO J1AN
2
and threshold voltage Vnv=0.4V. Ifthe gate voltage
increases by 10 mV, what is the change in drain voltage?
; . ~ .
Also find what choice of R
0
places the transistor at the edge of the nonsaturation
region with Vas= 1 V?
VDD=1.8V
1

WA.=210.18
M1
Figure 8
(10)
4. For all transistors in Figures 9(a) and 9(b), 13 = 75, fmd the values of
'.
(i) Collector current /c and resistance Rc for Figure 9(a).
(ii) Base voltage VB and resistance Rc for Figure 9(b ).
+10V
Rc
+
VcE=4V
-10V
Figure 9 (a)
Ra=25kn
(4)
+5V
la=0.5 rnA
Vc=-1V
Rc
-5V
Figt.lre 9 (b)
(10+10)