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3nm vs 5nm Processors Explained

The 3nm processor is smaller, consumes less power, produces less heat, and is faster than the 5nm processor, which is cheaper. Double patterning is a technique used in semiconductor manufacturing to achieve higher density and better resolution, especially at smaller process nodes, by employing lithography methods. This method involves splitting dense patterns into two masks to improve accuracy and layout density as technology nodes shrink below 30nm.

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933 views3 pages

3nm vs 5nm Processors Explained

The 3nm processor is smaller, consumes less power, produces less heat, and is faster than the 5nm processor, which is cheaper. Double patterning is a technique used in semiconductor manufacturing to achieve higher density and better resolution, especially at smaller process nodes, by employing lithography methods. This method involves splitting dense patterns into two masks to improve accuracy and layout density as technology nodes shrink below 30nm.

Uploaded by

SUBBARAO
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

What is the difference between a 3nm and a 5nm processor?

The main difference is the 3nm processor is smaller than the 5mn processor. In
3nm processor will consume less power and will produce less heat as compared to
the 5 nm chipset. and due to this, the 3nm processor will be faster as it will be less
affected by heat as compared to the 5 nm. Another difference is the price. You will
get the 5mn processor cheaper as compared to the 3mn. You will take the PO
(gate) connection over OD(Diffusion) in 3 nm, I think it’s the biggest advantage of
3nm technology, however in Analog layout, the designer prefers to take gate
control outside of OD(Diffusion) in 3nm technology.

What Is Double Patterning in VLSI?

“To achieve higher density and better resolution in layout, we used double
patterning”
Double patterning is a widely used technique in advanced semiconductor
manufacturing processes, especially at smaller process nodes. This technique
involves using lithography methods to define the features of integrated circuits
more precisely. By employing double patterning, designers can fabricate chips at
sub-nanometer process nodes, ensuring high performance and functionality. The
double patterning process typically involves litho-etch-litho-etch (LELE) pitch-
splitting steps within the fabrication facility. Another approach known as self-
aligned double patterning (SADP) utilizes spacer methods as part of the double
patterning process, enabling even greater precision in feature definition.

The fabrication of MOSFETs is done using light of wavelength 193nm in a process


called Optical lithography. Now as we move towards lower technology nodes i.e.
channel length below 30nm, the process can lose its accuracy. The quality is lost
due to the diffraction of light around the corners and edges of the mask since the
features are too small compared to the wavelength of light. This results in uneven
edges, shorts, or the complete absence of the metal to be etched. This is where
double patterning comes into the picture.

In this method, dense patterns of metals in a single mask are split into 2 different
masks that can be interleaved to get the original pattern as desired. and the masks
are identified by assigning colors to the metals (red and green as shown in the
following figure). Since the masks are fabricated separately this can be corrected.
This way we can get better resolution and higher layout density.

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