formula Cheat Sheet ~~ Ctass 12 Physics
Electric charges & Fields
Coulomb's tow | F=1 4,4 F| Sphere
i—e—« an, ve VWanter
for vacuum | yee
Electr Feld Intensity PRO ane
a, ae
Bef = Sewree chage Le
Sr Test crore Eneryy stored tno. Capacitor: [Ferce between 2
uc ak roryeryg Fg) Seen
por unyform elect Fad, 9. X= Gea hae eno erogy Energy (oss Ge cacy
be ER = excose & byte eet The
+ for nen- uniform ‘# Dipole moment CF)
= [2-at AF St Be hiahat .
oa n
fora closed surlce — 44 oe placed th WEF
o=fe at Up Torque T= Px?
eElectic Feld due to dipole] boned iets iti 5
on oat Sotiork done fn re =
‘rage from 0,30, |U= pe (cosa-cose,)
TE pttechostate polentel enevgy
6 On the she Sadie Ihe vs =e
Be ig __F parge densily |
See
5 ny set pire t rE ct
Ba he rebate Ef due 'o infra), Cah
w fo Charged Conducing Spite] “O* @ oad ab
‘ EF duct inke
nN @ tpg ely
R
4 pe # Combination 6 identical cells
ce Pte V= | oil “il —]y= Shae | | B= Cum spuie) Sage] T=
eeto dite Equaleial 4-0 g lo0-t, Freda) tt
Eedic Potential jew peak ov Fu YeJoules Low fae] mRer
H=URE Joule Fined] t= mnt
HetRE Calories mR+nr
ee
vats rb
Capacitance Fy
ar 3M ies Conbinallin Faroe amt-
e=-dv Or ve-[E-d Bee =_—
Force
&=4(7x8)
Pitch CP) = 2amvcoce
WwMalin In Uniform Tiansverce Hognelic Field
Re ie © Time period Tk= an
vcs 6 Gastar po
remy
Soe = see 4% Dilfracton due toa single Shit
(ai eax Time ‘@condition for n moximan 4 Fresnel distance
Tauts. i nes) Pos asing,= Can ns1,2,3,.... zea
a
}®Condtifon for nib minimum
PD= OSinO,= nA n=1,2,3,-----
Telegram: @ Air
‘@LAfath of Central maximum
3 =2ZAD
a Anguior (ringe widin 4 Angular fefnge width of second:
ea caea=2 vice fee =a ”
a ascattering angle @ varies fhversely as stn (el2) &,= — 62" ev
rd
© Frequency of, eeetron fn n® Orbit 3
Ke te Ye ( (hj eee = btenete
meray: eNo-0f Spectral Ures due to transftion
Gf electron from n' orbit to lower oibsl f
N= n(n-1)
* wavelength Of radfation fn the transtéfon from
Tem L = R27 L- | Re Rydoeys Core
a npn wena
© een enegy= to
oe
nyse won ty oS
L=nh or mve= oh Cabed os
Frequency of the radfation
© Nuclear densthy
enuclear Radtus Nuclear densily f= Mass OF nucleus
R=R,A volume OF nucleus
Mass defect © Binding Energy
am=[gm,-+ (A-Z)m)~ my] B-E= omc~
Semiconductor Devices
© Total Curtent through the pure [ Btading eneyy pe
semiconductor 4 pation J
t= gts,
q= ONy tte G= eN, Up
* Electrical Conductisthy fn Semi conductor
T= OC ry ue + hy Ue)
A= mobiity1.Q=+ne 14.P=N\
i a -2 ie
we
3. OS ow 16.p] r2R
| Vj Ww 17. L Kuh = 3-6 X10°T
Q
2» "CO
=RA
18, §=RA
ae 4 a