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DATA SHEET
M3D091
Philips Semiconductors
Product Specication
BLF278
d g s g 5 3
Top view
d
MAM098
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
QUICK REFERENCE DATA RF performance at Th = 25 C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B CW, class-C CW, class-AB f (MHz) 108 108 225 VDS (V) 50 50 50 PL (W) 300 300 250 Gp (dB) >20 typ. 18 >14 typ. 16 D (%) >60 typ. 80 >50 typ. 55
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
2003 Sep 19
Philips Semiconductors
Product Specication
BLF278
MAX.
UNIT
V V A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE max. 0.35 max. 0.15 UNIT K/W K/W
thermal resistance from junction total device; both sections to mounting base equally loaded. thermal resistance from mounting base to heatsink total device; both sections equally loaded.
MRA988
handbook, halfpage
100
handbook, halfpage
500
MGE616
ID (A)
Ptot (W)
10 200
100
10
500
40
80
120 Th (C)
160
Total device; both sections equally loaded. (1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
2003 Sep 19
Philips Semiconductors
Product Specication
BLF278
MAX.
UNIT
V mA A V mV S
drain-source on-state resistance VGS = 10 V; ID = 5 A VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz
A pF pF pF pF
VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
GROUP
GROUP
2003 Sep 19
Philips Semiconductors
Product Specication
BLF278
handbook, halfpage
MGE623
handbook, halfpage
30
MGE622
T.C. (mV/K) 1
ID (A) 20
3 10 4
5 102
101
VDS = 10 V. VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values per section.
Fig.5
handbook, halfpage
400
MGE621
handbook, halfpage
1200
MGE615
C (pF) 800
200
Cis 400
100
Cos
0 0 20 40 VDS (V) 60
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values per section.
2003 Sep 19
Philips Semiconductors
Product Specication
BLF278
handbook, halfpage
400
MGE620
200
100
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
APPLICATION INFORMATION Class-B operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specied. RGS = 4 per section; optimum load impedance per section = 3.2 + j4.3 (VDS = 50 V). MODE OF OPERATION CW, class-B CW, class-C Ruggedness in class-B operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 108 MHz at rated load power. f (MHz) 108 108 VDS (V) 50 50 IDQ (A) 2 0.1 VGS = 0 PL (W) 300 300 Gp (dB) >20 typ. 22 typ. 18 D (%) >60 typ. 70 typ. 80
2003 Sep 19
Philips Semiconductors
Product Specication
BLF278
handbook, halfpage
30
MGE682
MGE683
handbook, halfpage
80
Gp (dB) 20
(2) (1)
10 20
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.
Fig.9
handbook, halfpage
600
MGE684
200
0 0 5 10 Pi (W) 15
Class-B operation; VDS = 50 V; IDQ = 2 0.1 A; f = 108 MHz; ZL = 3.2 + j4.3 (per section); RGS = 4 (per section). (1) Th = 25 C. (2) Th = 70 C.
2003 Sep 19
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C2 +VDD1 R11 IC1 R7 C36 C37 C11 C19 C25 C24
Philips Semiconductors
R8
L11
50 input T1
C3 C1 R1
C4
C31
C33 R10
,,
L21
50 output
C30 C34
C32
,,
L23
MGE688
L22
Product Specication
BLF278
+VDD2
Philips Semiconductors
Product Specication
BLF278
CATALOGUE NO.
C1, C2, C33, C34 multilayer ceramic chip capacitor; note 1 C3, C4 C5, C6, C28 C7 multilayer ceramic chip capacitor; note 1 lm dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor
C8, C11, C12, C15, C16, C19, C36 C9, C10, C13, C14, C20, C25 C17, C18, C22, C23 C21, C24, C35 C26
multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 lm dielectric trimmer multilayer ceramic chip capacitor; note 1 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 2 grade 3B Ferroxcube wideband HF chokes in parallel 4 turns enamelled 2 mm copper wire
1 nF, 500 V 470 pF, 500 V 10 F, 63 V 2 15 pF + 1 18 pF in parallel, 500 V 3 15 pF in parallel, 500 V 2 18 pF + 1 15 pF in parallel, 500 V 2 to 18 pF 3 43 pF in parallel, 500 V 43 43 43 43 43 length 57.5 mm width 6 mm length 29.5 mm width 6 mm length 14 mm width 6 mm length 6 mm width 6 mm length 17.5 mm width 6 mm 4312 020 36642 85 nH length 13.5 mm int. dia. 10 mm leads 2 7 mm length 19.5 mm width 6 mm 2222 809 09006
C27 C29
C30 C31, C32 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L16 L12, L15
L13, L14
stripline; note 2
43
2003 Sep 19
Philips Semiconductors
Product Specication
BLF278
DESCRIPTION stripline; note 2 stripline; note 2 stripline; note 2 semi-rigid cable; note 3 43 43 50 50
VALUE
DIMENSIONS length 24.5 mm width 6 mm length 66 mm width 6 mm length 160 mm width 4.8 mm ext. dia. 3.6 mm outer conductor length 160 mm
CATALOGUE NO.
metal lm resistor 10 turn potentiometer metal lm resistor metal lm resistor metal lm resistor metal lm resistor metal lm resistor voltage regulator 78L05 1:1 Balun; 7 turns type 4C6 50 coaxial cable wound around toroid
10 , 0.4 W 50 k 3 12.1 in parallel, 0.4 W 10 ; 0.4 W 10 5%, 1 W 4 10 in parallel, 1 W 5.11 k, 1 W 14 9 5 mm 4322 020 90770
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality. 2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m. 3. L22 is soldered on to stripline L21.
2003 Sep 19
10
Philips Semiconductors
Product Specication
BLF278
130 strap
150
strap strap
strap
strap
100
strap strap
strap
C20 V DD1 50 input T1 IC1 R11 C36 C11 C8 R2 and R7 C9 C13 R3 R4 C7 L5 L6 R5 R6 C10 C14 C18 C23 L7 L8 C17 slider R2 C12 C1 C3 R1 C2 C4 C35 C22 L11 C16 R8 L11 V DD1 L12 L9 L10 L13 C26 L14 L15 L17 C27 L18 L21 C31 L19 C29 C28 L20 L23 V DD2 R10 C30 C34 C32 C33 L22 C21 50 output
L1 C5 L2 C6
L3 L4
C15 slider R7
C24
MBC438
C25
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.
2003 Sep 19
11
Philips Semiconductors
Product Specication
BLF278
MGE685
handbook, halfpage
handbook, halfpage
MGE686
Zi () 1
ri
ZL () 6
RL
XL 0 4
1 xi
Fig.14 Input impedance as a function of frequency (series components); typical values per section.
Fig.15 Load impedance as a function of frequency (series components); typical values per section.
handbook, halfpage
30
MGE687
Gp (dB) 20
handbook, halfpage
10
Zi
ZL
MBA379
2003 Sep 19
12
Philips Semiconductors
Product Specication
BLF278
Class-AB operation RF performance in CW operation in a common source push-pull test circuit. Th = 25 C; Rth mb-h = 0.15 K/W unless otherwise specied. RGS = 2.8 per section; optimum load impedance per section = 0.74 + j2 ; (VDS = 50 V). MODE OF OPERATION CW, class-AB f (MHz) 225 VDS (V) 50 IDQ (A) 2 0.5 PL (W) 250 Gp (dB) >14 typ. 16 D (%) >50 typ. 55
Ruggedness in class-AB operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 225 MHz at rated output power.
2003 Sep 19
13
Philips Semiconductors
Product Specication
BLF278
MGE614
handbook, halfpage
20
handbook, halfpage
60
MGE612
10
20
0 0 100 200 PL (W) Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C. 300
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.
handbook, halfpage
400
MGE613
200
100
0 0 5 10 Pi (W) 15
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; f = 225 MHz; ZL = 0.74 + j2 (per section); RGS = 2.8 (per section). (1) Th = 25 C. (2) Th = 70 C.
2003 Sep 19
14
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R2 C10 R8 C15 C11 C8 C16 C24 L14 A R3 50 input
Philips Semiconductors
+VDD1 C14
C22 C23
,,, ,,,
L1 L2 L3 +VDD1 R11
C3 C1 R1 C2 C4
,,, ,,,
R4 L4 L6 L8 L10 C5 C6 C7 L5 L7 L9 L11 R5 C9 C12 A R6 C13 C35 R7 C37 C36
D.U.T.
,,,,
L15 L12 L18 L20
C31
C33 R10
,,
L22
,,,,
C20 C21 C28 C29 L13 L19 L21 L16 C17 C25 C18 R9 L17 C26 C19 C27 +VDD2
C30 C34
C32
,,
L23 L24
MGE617
50 output
15
IC1 C38
Product Specication
BLF278
Philips Semiconductors
Product Specication
BLF278
CATALOGUE NO.
stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2
43 43 43 43 43
2003 Sep 19
16
Philips Semiconductors
Product Specication
BLF278
DESCRIPTION 2 grade 3B Ferroxcube wideband HF chokes in parallel 134 turns enamelled 2 mm copper wire stripline; note 2 stripline; note 2 metal lm resistor 10 turns potentiometer metal lm resistor metal lm resistor metal lm resistor metal lm resistor metal lm resistor voltage regulator 78L05
VALUE
DIMENSIONS
40 nH
L18, L19 L20, L21 R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass reinforced PTFE dielectric (r = 2.2), thickness 116 inch; thickness of copper sheet 2 35 m. 3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
2003 Sep 19
17
Philips Semiconductors
Product Specication
BLF278
119
130
strap strap
strap strap
C24 VDD1 L2 L1 C1 50 input R1 C2 C4 C13 R6 L3 slider R7 R11 C38 IC1 to R2,R7 C36 C16 C37 C11 C14 L14 R8 L14 L15 L12 C20 L13
C15
C35 slider R2
C3
C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 VDD2 L23 C26 C27
C12
C17
C18
L24
MBC436
Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
2003 Sep 19
18
Philips Semiconductors
Product Specication
BLF278
handbook, halfpage
MGE611
handbook, halfpage
MGE625
zi () 1 ri
ZL () 2
XL
0 RL
xi 1
2 150
200
f (MHz)
250
0 150
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; RGS = 2.8 (per section); PL = 250 W.
Fig.23 Input impedance as a function of frequency (series components); typical values per section.
Fig.24 Load impedance as a function of frequency (series components); typical values per section.
handbook, halfpage
20
MGE624
Gp (dB)
handbook, halfpage
10
Zi
ZL
MBA379
0 150
200
f (MHz)
250
Class-AB operation; VDS = 50 V; IDQ = 2 0.5 A; RGS = 2.8 (per section); PL = 250 W.
2003 Sep 19
19
Philips Semiconductors
Product Specication
BLF278
s22 160.9 165.8 177.6 175.8 171.2 168.1 166.8 166.5 166.5 166.7 167.4 169.4 170.0 170.8 172.4 174.0 175.5 176.5 177.6 178.3 179.2 179.5 178.3 177.1 176.0 175.0
2003 Sep 19
20
Philips Semiconductors
Product Specication
BLF278
SOT262A1
A F D1
U1 q H1 C w2 M C M
U2
E1
5
A w1 M A M B M w3 M
3
b e
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.77 5.00 b 5.85 5.58 c 0.16 0.10 D D1 e E E1 F 1.78 1.52 H H1 p 3.28 3.02 Q 2.85 2.59 q 27.94 U1 34.17 33.90 U2 9.91 9.65 w1 0.25 w2 0.51 w3 0.25
0.227 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.112 1.345 0.390 1.100 0.010 0.020 0.010 0.435 0.197 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.102 1.335 0.380
EUROPEAN PROJECTION
2003 Sep 19
21
Philips Semiconductors
Product Specication
BLF278
This data sheet contains data from the objective specication for product development. Philips Semiconductors reserves the right to change the specication in any manner without notice. This data sheet contains data from the preliminary specication. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specication without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specication. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notication (CPCN).
II
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status Production), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Sep 19
22
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
613524/04/pp23
Sep 19