429650 Integrated Circuit Processing Technology

Postgraduate course in Electrical Engineering

SUT
WEEK 1
Lecturer: Dr. Thipwan Fangsuwannarak
1

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Chapter 1
Physics of Semiconductor materials

Si

electrons nucleus

protons
electrons As

electron

2
nized atom) (ion)
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 electrons

Si

Si

protons 14 neutrons
14 3
Energy level 1
_
electrons 2
Energy level 2
,,
8

protons
_ electron

++ _
++

isotopes
Energy level
3
,,()
4

_
3

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(Periodic table)
electron
I
II
III IV
V
nucleus

VI VII

(orbitals)

(shells)

electrons

electron

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(Molecule)

bond sharing
(covalent bond)

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Bond model

(Single and
al)
2
d model :
d model :
s 4
ns
electrons
6
ns bond


bonds
electron

n=p
(1)
(2)
= ni
3
cm

3
cm
2
n.p
=
n
i
intrinsic ni2
C) ni = 1.41010 cm-3 ni2 ~ 21020 cm-6 7
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Extrinsic semiconductor materials

Doping
(impurities)

n
extrinsic semiconductor

valence electrons 5
Sb, As P

(Donor
atoms)
8
cm3

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valence electrons 3
B, Ga In

(Accepter
atoms)
cm3
NA
bond 9

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Band model

Conduction band and valence band

10

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Energy Level

nergy = QV eV
11

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electron

(2) n.p = ni2
(3)
ND
cm3
(4)
n = ND
12

nd model n

0
K

13

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nd model p

0K

14

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: Conductivity

(conductivity : )

(resistivity)



.cm = 1
[ -1cm.-1 ]
(5)

physical
properties
1. (free carriers)

15


l
R=
A

[ ]

(6)

R = V/I

(sheet resistance : RS )

I
I
A
V
(/ ) FourPoint Probe
1 s 2 s 3 s 4
d

flow
line
equipotential

p
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V
RS = 4.53
I

[/ ]

(7)

(7)

(d)

(8)
(8) = RS d

= 2s
(9)
I

17
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 Resistivity Carrier concentration

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q 1.610-19

= q( n n + p p )
(10)
mobility (
mn :
)

19
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 Mobility Carrier concentration

CT = NA+ND

20

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21

Example

Donor and Acceptors

A silicon crystal is known to contain 10-4

atomic percent of arsenic (As) as an impurity. It
then receives a uniform doping of 3 1016 cm-3
phosphorus (P) atoms and a subsequent uniform
doping of 1018 cm-3 boron (B) atoms. A thermal
annealing treatment then completely activates
all impurities.
Solution
Arsenic
group V impurity,
(a) What
is theisconductivity
type ofand
thisacts
22
as
a
donor.
Because
silicon
has
5
10
silicon sample?
-3
-4
atoms(b)
cmWhat
(Properties
Table),
10
is the density of the atomic
majority
percent
carriers?implies that the silicon is doped to a
concentration of
5 1022 10-6 = 5 1016 As atoms
22
cm-3
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Additional doping by B (a group III impurity)

converts the silicon from n-type to p-type
because the density of acceptors now
exceeds the density of donors. The net
acceptor
nce, the
silicon isdensity
p-type.is, however, less than the
density
of Bisatoms
donordensity:
e density
of holes
equal owing
to the to
netthe
dopant
compensation.
p = N (B) [N (As) + N (P)]
A

= 1018 [5 1016 + 3 1016]

= 9.2 1017 cm-3

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Assignment 2

ND = 21015 atom/cm3
/cm3 (r)

ND = 61017 atom/cm3
/cm3 (r)

3.
1015
atom/cm3
.
ND
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 four-point probe
= 510-3
= 4.510-3
sheet resistance RS

100 5 2
-

. ni 300K 2.4310

6 ni

25

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