Lecture 7

OUTLINE
Poissons equation
Work function
Metal-Semiconductor Contacts
Equilibrium energy band diagrams
Depletion-layer width

Reading: Pierret 5.1.2, 14.1-14.2; Hu 4.16
Gauss Law:
c
s
: permittivity (F/cm)
: charge density (C/cm
3
)
Poissons Equation
E(x) E(x+Ax)
Ax
area A
EE130/230M Spring 2013 Lecture 7, Slide 2
xA A x A x x
s s
A = A + c c c c ) ( ) (
s
dx
d
c
c
=
s
x
x x x
c
c c
=
A
A + ) ( ) (
Charge Density in a Semiconductor
Assuming the dopants are completely ionized:
= q (p n + N
D
N
A
)
EE130/230M Spring 2013 Lecture 7, Slide 3
Work Function
u
M
: metal work function u
S
: semiconductor work function
E
0
: vacuum energy level
EE130/230M Spring 2013 Lecture 7, Slide 4
Metal-Semiconductor Contacts
There are 2 kinds of metal-semiconductor contacts:
rectifying
Schottky diode




non-rectifying
ohmic contact
EE130/230M Spring 2013 Lecture 7, Slide 5
Ideal M-S Contact:
M
<
S
, p-type
M Bp
u + = u
G
E _
Band diagram instantly
after contact formation:
Equilibrium band diagram:
Schottky Barrier Height:
EE130/230M Spring 2013 Lecture 7, Slide 6
qV
bi
= u
Bp
(E
F
E
v
)
FB
W
p-type
semiconductor
u
Bp
EE130/230M Spring 2013 Lecture 7, Slide 7
Ideal M-S Contact:
M
>
S
, p-type
p-type
semiconductor
Equilibrium band diagram:
Band diagram instantly
after contact formation:
Ideal M-S Contact:
M
<
S
, n-type
EE130/230M Spring 2013 Lecture 7, Slide 8
Band diagram instantly
after contact formation:
Equilibrium band diagram:
Ideal M-S Contact:
M
>
S
, n-type
_ u = u
M Bn
Band diagram instantly
after contact formation:
Equilibrium band diagram:
Schottky Barrier Height:
EE130/230M Spring 2013 Lecture 7, Slide 9
qV
bi
= u
Bn
(E
c
E
F
)
FB
W
n
Effect of Interface States on
Bn
Ideal M-S contact:
u
Bn
= u
M
_

Real M-S contacts:
A high density of
allowed energy states in
the band gap at the M-S
interface pins E
F
to be
within the range 0.4 eV
to 0.9 eV below E
c

EE130/230M Spring 2013 Lecture 7, Slide 10
u
M
u
Bn
u
Bn
tends to increase with increasing metal work function

Metal Er Ti Ni W Mo Pt
u
M
(eV) 3.12 4.3 4.7 4.6 4.6 5.6
u
Bn
(eV) 0.44 0.5 0.61 0.67 0.68 0.73
u
Bp
(eV) 0.68 0.61 0.51 0.45 0.42 0.39
Schottky Barrier Heights: Metal on Si

EE130/230M Spring 2013 Lecture 7, Slide 11
Silicide-Si interfaces are more stable than metal-silicon
interfaces and hence are much more prevalent in ICs.
After metal is deposited on Si, a thermal annealing
step is applied to form a silicide-Si contact. The term
metal-silicon contact includes silicide-Si contacts.
Silicide ErSi
1.7
TiSi
2
CoSi
2
NiSi WSi
2
PtSi
u
M
(eV) 3.78 4.18 4.6 4.65 4.7 5
u
Bn
(eV) 0.3 0.6 0.64 0.65 0.65 0.84
u
Bp
(eV) 0.8 0.52 0.48 0.47 0.47 0.28
Schottky Barrier Heights: Silicide on Si
EE130/230M Spring 2013 Lecture 7, Slide 12
The Depletion Approximation
The semiconductor is depleted of mobile carriers to a depth W



In the depleted region (0 s x s W ):
= q (N
D
N
A
)
Beyond the depleted region (x > W ):
= 0
EE130/230M Spring 2013 Lecture 7, Slide 13
Electrostatics
Poissons equation:




The solution is:
s s

c c
c
D
qN
x
~ =
c
c
( ) ( ) x W
qN
x
D
=
s
c
c
( )
}
' '
= x d x x V ) ( c
EE130/230M Spring 2013 Lecture 7, Slide 14
Depletion Width, W

2

D
bi s
qN
V
W
c
=
( ) ( )
2
0
2
x W
K
qN
x V
S
D

=
c
At x = 0, V = -V
bi
W decreases with increasing N
D
EE130/230M Spring 2013 Lecture 7, Slide 15
Summary: Schottky Diode (n-type Si)

E
o

u
M
_
Si
u
Bn
W
qV
bi
= u
Bn
(E
c
E
FS
)
FB
n-type Si metal
E
v
E
F
E
c
u
M
> u
S


2
D
bi s
qN
V
W
c
=
Depletion width
EE130/230M Spring 2013 Lecture 7, Slide 16
Summary: Schottky Diode (p-type Si)

u
M
_
Si
u
Bp
W
qV
bi
= u
Bp
(E
F
E
v
)
FB
p-type Si metal
E
v
E
F
E
c
E
o
u
M
< u
S

EE130/230M Spring 2013 Lecture 7, Slide 17

2
A
bi s
qN
V
W
c
=
Depletion width