DEPARTMENT OF TECHNICAL EDUCATION

ANDHRA PRADESH.
Name

: G. Sushama,

Designation

: Lecturer in EEE

Institution

: Govt. Polytechnic, Warangal

Branch

: ELECTRICAL&ELECTRONICS ENGG.

Year/Semester

: VI Semester

Subject

: POWER ELECTRONICS

Subject Code No

: EE-602

Major Topic

: POWER ELECTRONIC DEVICES

Duration

: 50 Mins.

Sub Topic

: GTOSCR

Teaching Aids

: DIAGRAMS

EE-602.4.

RECAP
In the previous period we have discussed
Thyristor Ratings

EE-602.4.

OBJECTIVES
On the completion of the topic, you would able to
know
Construction Details of GTO SCR
Symbols of GTO SCR
Turn-OFF Action
Structure of GTO SCR
V-I Characteristics of GTO SCR
EE-602.4.

CONSTRUCTION DETAILS OF GTO SCR

It is 4-layer , 3-terminal device.
It is a P-N-P-N device with three terminal namely
anode, cathode and gate.
It can be Turned-OFF by applying Negative gate
pulse.
It can be Turned-On by positive gate pulse.
No forced commutation is required for GTO.
EE-602.4.

TURN-OFF ACTION OF GTOSCR

Anode

PNP

NPN

Gate

Cathode
EE-602.4.

TURN OFF ACTION

The current gain of PNP Transistor is low
If Gate signal is Negative excess carrier are drawn
from the base region of the NPN transistor and
collector current of PNP transistor is diverted to the
gate.
Base drive of NPN transistor is removed which inturn
removes the base drive of PNP Transistor.
Turn OFF is Achieved.
EE-602.4.

SYMBOLS OF GTOSCR
A

EE-602.4.

STRUCTURE OF GTOSCR

N+

This type of structure has

simultaneous Turn-ON and
turn-off operations.

N+

P+
N

P+

N+

P+

N+

P+

EE-602.4.

 Reduction of Gain of the PNP transistor is obtained by

introduction of Anode to N-base Short circuiting spots.
This structure has Low ON-state Voltage and ability to
block the reverse voltage is poor.
Large GTOs have interdigited Gate- cathode structure
in which the cathode emitter Consists of many parallel
Connected N- type fingers diffused in to P-type gate
region.
EE-602.4.

V - I Characteristics of GTOSCR

Anode Current IA
With IG

With IG=0

Anode Voltage (v)

EE-602.4.

10

 It has large value of latching Current ( 2 amp)

If gate current is not able to turn-on the GTOSCR,
then it behaves like a high Voltage, Low Gain
transistor.
It has low power loss.

EE-602.4.

11

SUMMARY
No forced commutation circuit
Fast switching speed
Higher gate circuit losses
Current gain of the transistor is low

EE-602.4.

12

QUIZ
1). Commercial GTOs currently have ratings of up to
a). 2.5kv,1.5kA
b). 1kv,1kA
c). 5kv,4kA
d). 7kv,5kA

EE-602.4.

13

QUIZ
2). SCR Turn OFF Achieved In The Given following
condition
a). The Current gain of PNP Transistor is Low.
b). The Current gain of PNP Transistor is high.
c). The Current gain of PNP Transistor is very Low.
d). The Current gain of PNP Transistor is very high.

EE-602.4.

14

FREQUENTLY ASKED QUESTIONS

1 Draw and Explain the Turn- OFF action Of the GTO

SCR
2 Draw the V-I characteristics GTO SCR

EE-602.4.

15

THANK YOU
EE-602.4.

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