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Chng 3:
it bn dn

Tip gip p-n v it bn dn

Cc tham s ca it bn dn
S tng ng ca it bn dn
Phn loi v mt s ng dng ca it

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Tip gip p-n

Trn mt ming tinh th bn dn, bng cc phng
php cng ngh, to ra hai vng bn dn loi N v loi
P, th ti ranh gii gia hai vng bn dn xut hin mt
vng, gi l lp tip gip p-n (p-n junction)

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it bn dn
Linh kin ch c mt lp tip gip p-n gi l it
(diode) bn dn.

Hnh dng, k
hiu, cu to:

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S hnh thnh tip gip p-n

Vng bn dn loi N c ht dn a s l electron t do
(NA=1016cm-3); vng bn dn loi P ht dn a s l l
trng (ND=1017cm-3).
Do s chnh lch nng electron v l trng gia hai
vng bn dn nn cc electron gn tip gip p-n
khuch tn t vng N sang vng P v l trng khuch
tn t vng P sang N. Kt qu l tip gip p-n ch cn
cc ion tp cht: ion dng pha tp cht n, ion m
pha tp cht p. Vng gia cc ion ny rt ngho ht dn
in (electron, l trng), nn c gi l vng ngho
(depletion region) hay vng in tch khng gian
Cc ion ny to thnh mt in trng hng t n sang
p gi l in trng tip xc. in th to bi in
trng ny gi l hng ro th nng (barrier potential)

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S hnh thnh tip gip p-n

pn junction: tip gip p-n

depletion region: Vng ngho
barrier potential: Hng ro th nng

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Tip gip p-n trng thi cn bng

in trng tip xc ngn cn s khuch tn
ca cc ht dn a s (electron bn dn loi
n; l trng bn dn loi p)gim dng khuch
tn, v tng cng chuyn ng tri ca cc ht
dn thiu stng dng tri. Khi dng in sinh
ra bi cc ht dn ny bng nhau (nhng
ngc chiu), th tip gip trng thi cn bng
ng.
trng thi cn bng ng, tip gip p-n c b
dy xc nh (10-6m), in trng tip xc v
hng ro th nng cng c cc gi tr xc nh.

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M hnh vng nng lng ca tip

gip p-n trng thi cn bng

Cc tham s ca tip gip p-n trng

thi cn bng
Hiu in th tip xc
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xn

q
V Edx
N A x 2p N D xn2
2
xp
ND N A
V0 VT ln
ni2

xp: rng vng ngho v pha p

xn: rng vng ngho v pha n
=11,80=11,8.8,85.10-14(F/cm):
Hng s in mi ca cht bn dn

in trng tip xc

ND N A
E0 KT ln
2
ni

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Tip gip p-n phn cc thun

Tip gip p-n c phn cc thun khi t mt in p
mt chiu c cc dng ni vo bn dn p v cc m
ni vo bn dn n
in p phn cc (Vbias) phi ln hn hng ro th
nng.
in trng ngoi ngc hng vi in trng tip
xc, nn lm gim in trng tip xc. Etx=E0-Eng

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Tip gip p-n phn cc thun

in trng ngoi hng t p sang n, lm cc electron bn
dn n tin ti tip gip p-n, y l hin tng phun ht dn
vo vng ngho, lm in tr vng ngho gim xung nhanh
chng
in trng ngoi lm tng dng khuch tn v gim dng
tri
in trng ngoi lm gim rng vng ngho, lm gim
in trng tip xc v lm gim hng ro th nng
Khi tip gip p-n c phn cc thun, c dng in t bn
dn p sang bn dn n, gi l dng phn cc thun.

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Tip gip p-n phn cc ngc

Tip gip p-n c phn cc ngc khi t mt in p
mt chiu c cc dng vo bn dn n v cc m vo
bn dn p
in trng ngoi cng hng vi in trng tip xc,
nn lm tng cng in trng tip xc. Etx=E0+Eng

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Tip gip p-n phn cc ngc

in trng ngoi hng t n sang p lm cho cc ht
dn in a s (electron bn dn n, l trng bn dn
p) cng ri xa tip gip p-n, lm cho rng ca vng
ngho tng ln, in tr ca vng ngho cng tng ln
nhanh chng
in trng ngoi lm gim dng khuch tn v tng
dng tri (dng tri rt nh so vi dng khuch tn)
Khi tip gip p-n c phn cc ngc, ch c dng in
ngc (rt nh) qua tip gip p-n.

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Dng in ngc v hin tng

nh thng tip gip p-n
Dng in ngc l dng dch chuyn c hng ca ht
mang in thiu s (electron trong bn dn p, l trng trong
bn dn n) di tc dng ca in trng ngoi
Dng in ngc rt nh (c vi A) v nhanh chng bo
ho khi tng in p phn cc ngc
Nu tip tc tng in p phn cc ngc n mt mc
no tip gip p-n b nh thng, dng ngc tng t
bin.

Dng in qua tip gip p-n phn

cc thun
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Dng in qua tip gip p-n phn cc thun l dng

chuyn di c hng ca cc ht dn in a s: I=IP+IN
Dng khuch tn l trng

Ip

qSD p p N
LP

V
1
exp
VT

Dng khuch tn in t

IN

qSDn n p
LN

V
1
exp
VT

S: tit din tip gip p-n

Dp;Dn: h s khuch tn ca l
trng, electron
pN: nng l trng khuch tn
t p sang n
nP: nng electron khuch tn
t n sang p
LP: di khuch tn ca l
trng
LN: di khuch tn ca
electron
V: in p phn cc thun
VT: th nhit

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Dng in qua tip gip p-n phn cc

thun
qSD p p N qSDn n p
I IP IN

LP
LN

V
1
exp
VT

V
1
I I 0 exp
VT

Vi:

I0

SqD p p N
Lp

SqDn nP

Ln

Dng in ngc bo ha

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Dng in qua tip gip p-n phn

cc ngc
Dng in ngc bo ha l dng chuyn di c
hng ca cc ht mang in thiu s:
Ing=Ingp+Ingn

I ng

SqD p p N

Lp

Dn 2

.ni
L p N D L n N A
Dp

I ng S .q

SqDn nP

Ln

c tuyn V-A ca it bn dn
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Xy dng bng phng php thc nghim:

- Mc cc ng h o dng in v in p nh hnh v

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c tuyn V-A ca it bn dn
c tuyn V-A
l quan h gia
dng in qua
it v in p
t vo cc cc
ca it

V
1
I I 0 exp
VT

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c tuyn V-A ca it bn dn
c tuyn V-A ca it bn dn chia thnh ba
phn r rt.
Vng phn cc thun: Khi 0<UAK<Uth (0,7V), dng
thun gn nh khng c. Khi UAKUth, dng thun
tng nhanh
Vng phn cc ngc: Khi UAK<0, dng ngc bo
ha rt nh (c vi chc nA n vi A)
Vng nh thng: Dng in ngc tng t bin khi
in p phn cc ngc t n in p nh thng

T c tuyn V-A ta thy it l linh kin ch dn

in theo mt chiu khi n c phn cc
thun. Ngi ta cn ni it c tnh cht Van

S ph thuc ca c tuyn V-A vo

nhit
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V
1
I I 0 exp
VT

T cng thc trn cho thy

dng in qua it ph
thuc vo nhit thng
qua VT v ph thuc vo
dng bo ha ngc I0
Dng bo ha ngc ph
thuc mnh vo nhit
vi mc xp x tng gp i
khi nhit tng 10oC; hay
-2,1mV/oC (Si); -2,3mV/oC
(Ge)

Cc tham s ca it bn dn
in tr tnh: L in tr ca tip gip p-n khi c in
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p mt chiu c nh t vo cc cc ca it.

U AK
R0
I

R0th<<R0ng

in tr ng: L in tr ca ca tip gip p-n khi lm

vic vi in p bin i. Hay ni cch khc l in tr tc
thi ca tip gip

U AK dU AK
ri

I
dI

Cc tham s ca it bn dn
in dung ca it: L in dung ca lp in tch
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khng gian trng thi cn bng hoc khi phn cc ngc.

in p ngc cc i Ungmax: L in p ngc ti

a m it cn lm vic bnh thng, thng Ungmax=0,8Udt

Dng thun cc i Imax: L dng in thun ti a m

it cn hot ng bnh thng

Khong nhit lm vic: L khong nhit m

it cn lm vic bnh thng. i vi it Si l t -60 n
150oC; it Ge l -60 n 85oC

Cc tham s ca it thng c cho

Datasheet ca hng sn xut

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Cc s tng ng ca it
bn dn
M hnh it l tng (Ideal model): it tng
ng vi mt cng tc:
Cng tc ng khi it phn cc thun
Cng tc h khi phn cc ngc

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Cc s tng ng ca it
bn dn
M hnh it thc t (Practical model): Ging nh m
hnh l tng nhng tnh n nh hng ca hng ro
th nng (0,7V i vi Si v 0,2V i vi Ge)
Khi phn cc thun it tng ng vi mt ngun p (bng
hng ro th nng) v cng tc ng
Khi phn cc ngc it tng ng vi cng tc h

Cc s tng ng ca it
bn dn
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M hnh it hon chnh (Complete model): L m hnh k

n nh hng ca hng ro th nng VF, in tr thun
rd (rt nh) v in tr ngc rR (rt ln)
Khi phn cc thun it tng ng vi mt ngun p (bng
hng ro th nng), mt cng tc ng v in tr thun r d
Khi phn cc ngc it tng ng vi cng tc h v in tr
ngc

Cc s tng ng ca it
bn dn
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M hnh it hot ng tn s cao:

Khi it hot ng tn s cao, th phi tnh n nh
hng ca cc t k sinh (t khuch tn Cd v t tip
gip p-n Cj)

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Phn loi v ng dng ca it

it chnh lu (rectifier diode): Da trn tnh
cht dn in theo mt chiu ca it chnh
lu dng in xoay chiu thnh mt chiu

ng dng ca it
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Cc mch ghim (hn ch in p)

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Phn loi v ng dng ca it

it Zener : Da trn hin tng nh thng v in
ca it. Dng n nh in p
Khi c phn cc thun, it Zener cng ging nh
it bnh thng, khi phn cc ngc th n ch lm vic
trng thi nh thng.
it Zener c ch to t hai lp bn dn c pha
tp rt mnh (nn in p nh thng thng nh hn
it thng thng)

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S tng ng ca it Zener

ZZ: Tr khng
(Impedance) ca it
Zener

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ng dng ca it Zener

n nh in
p mt chiu:
Khi ti thay i:
Uod=Uz

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ng dng ca it Zener

n nh in
p mt chiu:
Khi in p
ngun vo thay
i: Uod=Uz

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Phn loi v ng dng ca it

it xung : it lm vic vi cc xung in p (dng
in), tng t nh mt kha in t, ng m mch
it Schottky: L it c thi gian phc hi trng thi
ng, ngt nhanh, it schottky s dng tip xc bn dnkim loi

Phn loi v ng dng ca it

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it bin dung (Varicap): L it lm vic nh mt

t in, vi in dung ca phn tip gip p-n thay i
theo in p phn cc cho it

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Phn loi v ng dng ca it

it xuyn hm (tunnel): it lm vic da
trn hiu ng xuyn hm. C kh nng dn in
theo c chiu thun v chiu ngc

it cao tn (it tch sng): Nguyn l lm vic

ging nh it chnh lu, nhng tn s lm vic rt cao,
thng dng trong mch tch sng ca my thu thanh