5

5.1
5.2
5.3

5.1
SIMULINK SimPowerSystems

SIMULINK

MATLAB
5-1

5-1

 5
5-1 SW
Ron Lon Vf

Ron Vf
Lon

MATLAB RC

(
MOSFET)

 5
MATLAB

ode23tb
ode15s
0
m

 5
5.1.1
1.
5-2
Vak Vf
0

5-2
(a) (b)

 5
SimPowerSystems 5-3

5-3

 5
2.
2 1 2
(a k)
(m) [Iak Vak]
A V
3.
5-4

(1) (Resistance Ron)

0 0
(2) (Inductance Lon) H
0 0

5-4

 5
(3) (Forward voltage Vf)
V Vf
(4) (Initial current Ic) A
0

0
0

 5
(5) (Snubber resistance Rs)
inf

(6) (Snubber capacitance Cs)

F 0
inf

(7) (Show measurement port)

m

 5
5.1 5-5
50 Hz 100
V R 1
(1) 5-5
5-1

5-5 5.1

5-1 5.1

 5
(2) 5-4
Vs 50 Hz
100 V RLC R=1
[Simulation>Configuration Parameters]
ode23tb 0.2 s
(3)
D1 R 5-6

5-6 5.1

 5
5.1.2
1.

5-7
(Vak>0) (g>0)
Iak
I1
0(Iak=0)

(a)

(b)

5-7
(a) (b)

 5
SimPowerSystems
(Detailed Thyristor)
(Thyristor)
5-8

5-8
(a) (b)

 5
2.
2 1 1
2 (a k)
(g) (m)
[Iak Vak] A
V
3.
5-9
( )
(1) (Resistance Ron)
0 0

5-9

 5
(2) (Inductance Lon) H
0 0
(3) (Forward voltage Vf)
Vf V
(4) (Latching current I1)
A
(5) (Turn-off time Tq) s
0

 5
(6) (Initial current Ic) A
0
0
0

 5
(7) (Snubber resistance Rs)
inf

(8) (Snubber capacitance Cs)

F 0
inf

(9) (Show measurement port)

m

5.2 5-10

5-10 5.2

 5
(1) 5-10
5-2
5-2 5.2

 5
(2)
(Pulse Generator)
2 100 Hz
a t a=30
t=0.0230/360=0.01/6 s
50% 511 5-9
Vs 50 Hz 100 V RLC
R=1

5-11 5.2

 5
[Simulation>Configuration Parameters]
ode23tb 0.2 s
(3)
TH1 R 5-12

5-12 5.2

 5
5.1.3
1.
(GTO)
GTO
(g>0)
0 GTO
0
5-13(a) GTO

5-13
(a) (b)

 5
SIMULINK GTO
Vf 0(g>0) 0
(g0) 0 GTO
GTO

0
Imax 0.1Imax Tf 0.1Imax 0
Tt Iak 0 GTO
GTO
5-13(b)
SimPowerSystems GTO 5-14

5-14

 5
2.
GTO 2 1 1
2 (a k)
(g) (m)
GTO [Iak Vak]
A V
3.
GTO 5-15

5-15

 5
(1) (Resistance Ron)
0 0
(2) (Inductance Lon) H
0 0
(3) (Forward voltage Vf) GTO
V
(4) 10% (Current 10% fall
time Tf) s
(5) (Current tail time Tt) 0.1Imax
0 s
(6) (Initial current Ic)

 5
(7) (Snubber resistance Rs)
inf

(8) (Snubber capacitance Cs)

F 0
inf

(9) (Show Measurement port)

m GTO

 5
5.3 5-16
GTO
500 Hz 0.6

5-16 5.3

 5
(1) 5-16
5-3
5-3 5.3

 5
(2)
5-17 5-18
5-15
VDC 100 V RLC R=1
L=0.5 mH C=300 pF
[Simulation>Configuration Parameters]
ode23tb 0.01 s

5-17 5.3

5-18 5.3

 5
(3)
G1 R 519

5-19 5.3

 5
5.1.4
1.
(MOSFET) 0
(g>0)

MOSFET
SimPowerSystems MOSFET
P N MOSFET
MOSFET (g>0)
0 0
0 MOSFET 0

 5
MOSFET MOSFET

Ron
Rd MOSFET 5-20

(a)

(b)

5-20
(a) (b)

 5
SimPowerSystems MOSFET
5-21

5-21

 5
2.
MOSFET 2 1 1
2 (d s) MOSFET
(g) (m)
MOSFET [Id Vds]
A V
3.
MOSFET
5-22
(1) (Resistance Ron)

 5
(2) (Inductance Lon) H
0
(3) (Internal diode resistance Rd)

(4) (Initial current Ic)

(5) (Snubber resistance Rs)

inf

5-22

 5
(6) (Snubber capacitance Cs)
F 0
inf

(7) (Show measurement port)

m MOSFET

5.4 5-23

Mosfet L 1000
2 MHz 0.2

5-23 5.4

 5
(1) 5-23
5-4
5-4 5.4

 5
(2)
5-24 525

5-24 5.4

5-25 5.4

 5
5-26
5-27 VDC 24
V RLC C=0.03 F
RLC L=0.02 H R=1000
[Simulation>Configuration Parameters]
ode23tb 0.002 ms

5-26 5.4

5-27 5.4

 5
(3)
MOSFET C
5-28

5-28 5.4

 5
5.1.5
1.
(Insulted Gate Bipolar
Transistor IGBT)
20 80

IGBT 5-29

5-29
(a) (b)

 5
IGBT VCE
Vf (g>0)
0(g=0) IGBT
IGBT (VCE<0) IGBT
IGBT
IGBT
IGBT 5-30 IGBT

10% IGBT IGBT

IGBT RC

5-30

 5
SimPowerSystems IGBT 5-31

5-31

 5
2.
2 1 1
2 (C E) IGBT
(g) IGBT
(m) IGBT
[IC VCE] A V
3.
IGBT 5-32

(1) (Resistance Ron)

(2) (Inductance Lon) H
0

 5
(3) (Forward voltage Vf) IGBT
Vf V
(4) 10% (Current 10% fall
time Tf) s
(5) (Current tail time Tt)
s
(6) (Initial current Ic)

(7) (Snubber resistance Rs)

inf

 5
(8) (Snubber capacitance Cs)
F 0
inf

(9) (Show measurement port)

m IGBT

5-32

 5
5.5 5-33
IGBT
105 10
kHz 0.5

5-33 5.5

 5
(1) 5-33
5-5
5-5 5.5

 5
(2)
5-34 5-35
5-32 SIMULINK
VDC 100 V RLC
L1=400 H RLC
L=inf R=50 C=25 F
[Simulation>Configuration Parameters]
ode23tb 20 ms

5-34 5.5

5-35 5.5

 5
(3)
IGBT RLC
R//C 5-36

5-36 5.5

 5
5.1.6
1.
SIMULINK
5-37(a)

g=0
g>0

5-37(b)

5-37
(a) (b)

 5
SimPowerSystems
5-38

5-38

 5
2.
2 1 1
2 (1 2)
(g) (m)
[I12 V12]
A V
3.

5-39
(1) (Internal resistance Ron)
0

5-39

 5
(2) (Initial state) 0 1

(3) (Snubber resistance Rs)

inf

(4) (Snubber capacitance Cs)

F 0
inf

(5) (Show measurement port)

m

 5
5.6 5-40

0.01 0.06 s 0.165 s

5-40 5.6

 5
(1) 5-40
5-6
5-6 5.6

 5
(2)
5-41 5-42
0.06 s 0.165 s
Vs 120 V 50 Hz
RLC R=10 L=0.1 H C=10
F
[Simulation>Configuration Parameters]
ode23tb 20 ms

5-41 5.6

5-42 5.6

 5
(3)
RL 5-43

5-43 5.6

5.2
5.2.1
1.
SimPowerSystems
5-44 4
(Q1A Q2A Q3A Q4A) 4 (D1A
D2A D3A D4A) 2 (D5A D6A)

5-44
(a) (b)

 5
2.
6 1
A B C
+ -
N (g)

3.

5-45
(1) (Number of bridge arms)
1 2 3

5-45

 5
(2) (Snubber resistance Rs)
inf

(3) (Snubber capacitance Cs)

F 0
inf

 5
(4) (Power Electronic device)
4
GTO-Diode Mosfet-Diode IGBT-Diode
5-44(a)
GTO MOSFET IGBT
5-46
5-47

5-46
(a) MOSFET (b) IGBT (c)

5-47

 5
(5) (Internal resistance Ron)

(6) (Forward voltage)
IGBT GTO IGBT GTO
Vf Vfd
V
(7) (Measurements)

(None)
(All device currents)

 5
(Phase-to-Neutral and DC
voltages)

(All voltage and currents)

IQ1A Q1A 5-7

5-7

5-8
5-8

Q1 sw1
Q4 sw2 Q2 Q3 sw3

 5
5.2.2
1.
SimPowerSystems
5-48(a) ( )

(a)

(b)

5-48
(a) (b)

 5
2.
5 1
A B C
+ -
(g)

3.

5-49

5-49

 5
(1) (Number of bridge arms)
1 2 3
(2) (Snubber resistance Rs)
inf

(3) (Snubber capacitance Cs)

F 0
inf

 5
(4) (Power Electronic device)
6
GTO-Diode MOSFETDiode IGBT-Diode
5-48(a)
MOSFET IGBT
5-50 5-52

(a)

(b)

5-50
(a) (b)

5-51
(a) (b)

(a)

(b)

5-52
(a) (b)

 5
(5) (Ron)

(6) (Lon)
H
0
(7) (Forward voltage Vf)
IGBT GTO IGBT
GTO Vf Vfd
V MOSFET

(8) IGBT GTO Tf

Tt s IGBT
GTO

 5
(9) (Measurements)

(None)
(Device voltages) 6

(Device currents) 6

 5
(UAB UBC UCA UDC
voltages)
(All voltage and currents)

5-9
5-9

 5
5.7 5-53

5-53 5.7

 5
(1) 5-53
5-10
5-10 5.7

(2) Vs
220sqrt(3) 50 Hz
0 RLC R=2

P1 5-54

5-54 5.7

 5
P2 P3 P4 P5 P6

0.04/6 0.06/6 0.08/6 0.10/6 0.12/6

P1
[Simulation>Configuration Parameters]
ode23tb 0.06 s
(3)

5-55
Vd=2.34
Vs cos=2.34220cos60=445 V

5-55 5.7

5.3

SimPowerSystems

5.3.1 6
1.
6 (Synchronized 6-Pulse Generator)

5-56

5-56 6

 5
2.
6 5 1
alpha_deg

AB BC CA VAB VBC VCA

Block 6
0 1

pulses 6

 5
3.
6
5-57
(1) (Frequency of synchronisation
voltages)
Hz
(2) (Pulse width)
(3) (Double pulsing)
60

5-57 6

 5
5.8 6 5.7
5.7
6
(1) 5-58
5-11

5-58 5.8

 5
5-11 5.8

 5
(2) 5.7
6
V-I M
30
Step 1 0.04/6 s 0
6 5-59
[Simulation>Configuration Parameters]
ode23tb 0.06 s

5-59 5.8 6

 5
(3)
5-55
5-60 5-61 6

5-60 5.8

5-61 5.8

 5
5.3.2 12
1.
12 (Synchronized 12-Pulse Generator)
6
5-62

Y/Y- /Y-

5-62 12

 5
2.
12 5 2
alpha_deg

A B C VA VB VC
VA VB VC
Block 12
0
1

 5
12
6 PY
Y
PD
PD PY
30
12 6
6

5.9 5-63 12
12
12

5-63 5.8

 5
(1) 5-63
5-12
5-12 5.9

 5
(2)
5-64 Y
5-65 D 5-66
5-67

5-64 5.9

5-65 5.9 Y

5-66 5.9 D

5-67 5.9

 5
12 50 Hz
20 Vs 500
kV 50 Hz 0
V-I M
0 D 6
12
[Simulation>Configuration Parameters]
ode23tb 0.05 s

(3)
5-68
D 16

Vd = 6 2 Vs cos/ = 540 kV

5-68 5.9

 5
Y

5-69 5-70 12 PY
PD
PY PD PD
PY 30

5-69 5.9 PY

5-70 5.9 PD

 5
5.3.3 PWM
1.
PWM
SimPowerSystems
PWM PWM
PWM
2 1
2
5-71

5-71

 5
4 1 3
2 4
5-72

5-72

 5
6 1 3 5
2 4 6
5-73

5-73

 5
12 1 6
7 12

( ) ( 5-74)
1
0
0 1

5-74 PWM

 5
SimPowerSystems PWM
5-75

5-75 PWM

 5
2.
PWM 1 1
Signal(s)
( )
( )
( )

PWM

2 4 6 12
( ) ( )
( )
(MOSFET GTO IGBT)

 5
3.
PWM
5-76
(1) (Generator Mode) PWM
2 4
6 12
(2) (Carrier Frequency)
Hz 1

 5
(3) (Internal generation of
modulating signal)

5-76 PWM

 5
(4) (Modulation index)
[0 1]

(5) (Frequency of output voltage)

Hz
(6) (Phase of output voltage)

5.10 5-77 PWM
3

5-77 5.10

 5
(1) 5-77
5-13
(2) Vs
400 V UB 5-78
PWM 5-79

UB Vd=
3
0.85 400/2=294 V
5-80
Load 5-81

5-13 5.10

5-78 5.10 UB

5-79 5.10 PWM

5-80 5.10

5-81 5.10 Load

 5
[Simulation>Configuration Parameters>
Solver] ode23tb 0.1
s
(3)
5-82

294 V
Y

5-82 5.10

5-1

5-2

5-3

5-4 IGBT Boost

IGBT

5-5

 5
5-6 5-6 PWM

5-6

5-7 5-7

100 V 0 50 Hz
Ron = 0.001 Lon = 0 HVf = 0Rs = 20
C s = 4 FRC Lon = 0.01 H
RLC R = 2 L = 0H
C = inf
pulse pulse1 0.02 s
10 12

 5
5-8 5-8

5-9 5-9

5-7

5-8

5-9

 5
5-10 5-10

5-10