EE 324N

Periodic Table

Atomic
Number

Electrons and Shells

Valence
Shell

Ionization
Energy
Ionization
Positive Ion
Free
Electron
Negative Ion

Band Gap

Comparison of a Semiconductor Atom

to a Conductor Atom

Silicon
Negative
temperature

Copper
Positive
temperature

Silicon and Germanium

Covalent Bonds sharing of valence

electrons that holds atoms togethe

 Intrinsic
crystal
is one that
has no
impurities

Recombinations
electron losses energy
hole in the valence band

when a

conduction-band

and falls back into a

 Electron
Current

Hole
Current

Doping - addition of impurities to the

intrinsic (pure)
material.

semiconductive

To increase the number of conduction-band

electrons in intrinsic silicon, pentavalent
impurity
are added.
arsenic atoms
phosphorus
bismuth (Bi)antimony
(As)

(P)

(Sb)

Majority carrier Electrons

Minority carrier - Holes

Donor

To increase the number of HOLES in intrinsic

silicon, trivalent impurity atoms are added.
Indium (In)Gallium (Ga)
Boron (B)

Majority carrier Holes

Minority carrier Electrons

Acceptor

PN
Junction

Dynamic Resistance- internal resistance (voltage

drop)

Comparison of Silicon and Germanium

diode

Half-wave rectifier

Full-wave rectifier