Tutorial 13

19th Nov 2016

Problem 1
Quick tips
Quick tips
Quick tips
 Quick tips
When there is sufficient base current to saturate
a transistor, the corresponding base emitter
voltage VBE(sat)=0.8V for silicon
Is silicon transistor is in saturation IB>0.
BE junction is forward biased.
Collector current is iC=Vcc/Rc.
VCE(sat)=0.2V.
VBC=VBE(sat)-VCE(sat)=0.8-0.2=0.6>V=0.5V
BC junction is also forward biased
hFE=iC/iB . For saturation hFE>iC/iB
 Problem 2

VBE=0.7V
Solution
 Problem 3: 7.30
For the circuit given
Suppose Vcc = 5V
Find the minimum
value of hFE required
to saturate the BJT for
the case that RB=50
K, RC=1 K and v1=5V
b) Find the minimum value
of RC required to saturate the
BJT for the case that
hFE=100, RB=50 K and
Solution
Solution

Find the minimum value of RC required to

saturate the BJT for the case that hFE=100,
RB=50 K and V1=5V.
 Problem 4
For the inverter circuit shown in fig. R B=50K, the low
voltage is 0.2 V and high voltage is 5V.
Determine the minimum value of hFE required for
proper operation if the collector resistor R C has a value
of 1K
Solution
Problem 5: 7.27

14
Problem 7.27

15
Problem 7.27

16
Problem 7.27

17
Surprise test 6 (5M)

VBE=0.7V
Solution