Single-phase half-bridge inverter

Operational Details

3-wire DC source

Consis t s of 2 ch opper s, 3- wir e D C sou r ce

Tr ans ist or s swit c hed o n and of f alt er n at ely

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ADM I NI STRA TI VE CO M M I T TEE

S. M . EL- G HAZ ALY, Pr esid ent R . SNY DER, Pr es ident Elect M . M ADI HI AN, Secr e t ar y N. KO LI AS, Tr e asur e r R. SPARK S, Soc iet y Adm inist r at or

L. BO G LI O NE
W. C HAPPEL L

M . G UPTA
J. HA CKER

N. KO LI AS
S. KO UL

K. I T O H

J. LA SKER
T. LE E

J. LI N

A. M O RTAZ AWI

V. NA I R
Y. NI KAWA

G . P O NCHA K

D. SC HREURS
W. S HI RO M A

R. SN YDER

B. SZ ENDREN YI

R. W EI G EL
K. W U

I EEE TRANSA CTI O NS O N M I CRO WAVE
THEO RY AND TEC HNI Q UES

Edit or - in- Chie f : G . E. PO N CHAK
I EEE M I CRO WA VE M AG AZ I NE

Edit or - in- Chie f : K. REM LEY
I EEE M I CRO WA VE AN D WI RELES S

CO M PO NEN TS L ETTER S

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I EEE TRANSA CTI O NS O N TE RAHER TZ

SCI EN CE AND TEC HNO L O G Y

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Honor ar y Lif e M em be r s Dis t inguis hed L ect ur e r s P ast P r eside nt s

T. I T O H

A. A. O LI N ER

T. S. SAAD
P. ST AECKER

K. TO M I YA SU A . CAN G ELL ARI S

F. EL LI NG E R

A. FE RRERO
S. G EVO RG I AN

F. G HANNO UCHI
S. LU CYSZYN

A. - V. PHAM
P. TA SKER

M . T ENTZER I S
M. Y U

K. W U

K. W U
B. PE RLM AN ( 20 09)

J. M O DELS KI ( 2008)
J. S. KENNE Y ( 2 007)

M TT- S Chap t er Chai r s

Albuqu er que: H. J. W AG NO N

At lant a: D. LEAT HERW O O D

Aust r ia: A. SPRI NG ER

Balt im or e: N . BU SHYAG ER

Banga lor e: T . SR I NI VA S

Beijing: Z. FE NG

Belar u s: A. G US I NSKY
Benelu x:

D. VA NHO EN ACKE R- JAN VI ER

Bost o n: J. M UL DAVI N
Br asilia : J. D A CO STA/ A. KL AUTAU
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Buf f a lo: J. WHA LEN

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Cent r al & So ut h I t aly: G. DI NZE O

Cent r al No. Car o lina:
N. S. DO G AN

Cheng du: Z. NEI

Chicag o: H. LI U

Clevela nd: M . SC ARDEL LETTI

Colum bus: F . TE XEI RA

Conne ct icut : C. BLAI R

Cr oat ia: Z. SI PU S

Czech / Slovak ia: P . HAZ DRA

Dallas: Q . Z HANG
Edi t o r - i n- C hi ef

C. - K. CLI VE TZU ANG

Taiwan
Edi t o r i al A ssi s t .
C. - Y. C. CH ENG

Taiwan

Dayt o n: A. TERZ UO LI
Delhi/ I ndia: S . KO UL

Denve r : M . JAN EZI C

East e r n No. Car olina: T. NI CHO L S

Egypt : E. H ASHI SH
Finland : A. L UUKA NEN

Flor ida West Coa st :

K. A. O CO NNO R

Foot h ils: F. FREY NE

Fr anc e: P. EUDE LI NE
G er m any: K. S O LBA CH

G r ee ce: R. M A KRI

Har bin : Q . WU

Hawaii: R. M I YAM O TO
Hong Kong: W. S. CH AN

Houst on: J. T. WI LL I AM S

Houst on, Co lege St at io n:

G . H . HUFF
Hunga r y: T. BER CELI

Hunt s vile: H. G. SCHA NTZ

Hyder abad: M. CHAKR AVART I

I ndia: D. BH ATNA G ER

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I sr ae l: S. A USTE R

Japan : K. A RAKI
Kansa i: T. O HI R A

Kit che ner - W at er loo:

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Lit hua nia: V. URB ANAVI CI US

Long I sland/ New Yor k: J. C O LO TTI

Los A ngeles, Coa st al: W. D EAL

Los A ngeles, M e t r o/ S an Fe r nand o:

T. CI SCO

M alay sia: M . ES A
M alay sia, Pe nang : Y. CHO W

M elbo ur ne: K. L AM P

M exic o: R. M. RO DR I G UE S- DAG NI NO
M ilwau kee: S . G . JO SHI
M oha wk Valle y: E . P. RATAZ ZI

M ont r eal: K . W U

Nanjing : W. X. Z HANG
New H am psh ir e: D. SH ERWO O D

New J er sey Coas t : D. REYN O LDS

New S out h W ales :

A. M . SANA G AV ARAPU
New Z ealand: A. WI LL I AM S O N

Nor t h I t aly: G. VECC HI

Nor t h Jer se y: H . DAY AL/ K. DI XI T

Nor t h er n Au st r a lia: M . JAC O B

Nor t h er n Ne vada : B. S. RA WAT

Nor wa y: Y. THO DESEN

O r an ge Cou nt y: H. J . DE LO S SANTO S

O r eg on: T. RUT TAN

O r lan do: X. G O NG
O t t a wa: Q . YE

Philade lphia: J . NA CHAM KI N

Phoen ix: S. RO C KWEL L

Poland : W. J. K RZYSZ TO FI K

Por t u gal: C. PEI XEI RO

Pr ince t on/ Ce nt r a l Jer s ey: A . KAT Z

Q uee nsland: A. RAKI C

Rio de Janeir o: J . BER G M A NN

Roche st er : S. C I CCAR ELLI /
J. VE NKATAR AM A N

Rom a nia: G . LO JEW SKI
Russia , M os cow: V. A . KAL O SHI N

Russia , Nizhn y: Y . BEL O V
Russia , Novo sibir s k: A. G RI DCHI N

Russia , Saint Pet er sbu r g:

M . S I TNI KO VA
Russia , Sar a t ov: N. M . RY SKI N

Russia , Tom sk: R. V. M ES CHERI AKO V

Saint Louis: D. M ACKE

San D iego: G . T WO M EY
Sant a Clar a Valley / San Fr anc isco:

M . S AYED

Seat t le: K. A. P O ULS O N

Seoul: S. NA M

Ser bia and M ont enegr o: A. M ARI NCI C

Shang hai: J. F. M AO

Singap or e: A . AL PHO N ES
Sout h Af r ica : C. VAN NI EKI RK

Sout h Aust r alia: H. HA NSO N
Sout h Br azil: R. G ARC I A

Sout h east er n M ichigan : T. O ZDE M I R
Sout h er n Alb er t a : E. FEAR

Spain: J. I . ALO NSO
Spr ing f ield: P . R. SI Q UEI RA

Swede n: A. RYDB ERG

Swit ze r land: M. M ATT ES

Syr ac use: E . AR VAS

Taegu : Y. - H . JE O NG
Taipei: F. - T. TSA I

Thailan d: P. AKKA RAEKT HALI N

Tor on t o: G . V. ELEF THERI ADES

Tucso n: N. BURG ESS

Tur ke y: I . TEKI N
Twin C it ies: M . J . G A WRO NSKI

UK/ RI : A. R EZAZ ADEH

Ukr ain e, Kiev : Y. PO P LAVKO

Ukr ain e, Eas t , K har ko v:

O . V . SHRA M KO VA

Ukr ain e, Eas t St udent Br an ch Ch apt er , Khar kov:

M . K RUSLO V
Ukr ain e, Rep . of G eo r gia: D. KA KULI A
Ukr ain e, Vinn it sya : V. DUBO VO Y

Ukr ain e, We st , Lviv: I . I S AYEV

Venez uela: J . PE N A
Vict or ia: K. G HO RBAN I

Vir ginia M oun t ain: T. A . WI NSLO W

Wash ingt on DC/ N or t he r n VA : J. QIU

Winnip eg: V. O K HM AT O VSK I
I EEE M I CRO WA VE AN D WI RELES S CO M PO N ENTS LETT ERS

Assoc i at e E di t o r s
DI DI E R BELO T

ST M icr oelec t r on ics

Fr anc e
YI - JA N EM E RY C HEN

Nat ion al Taiwa n Un iv.

Taiwan

KWO K- KEUN G M . CH ENG

Chines e Univ. of Hong Kong

Hong Kong

WI LL I AM D EAL
Nor t h r op G r um m an
Advan ced Te ch.

USA

TAKAS HI O H I RA
Toyoh ashi Un iv. o f Tec h.

Japan
LUCA PERREG RI N I

Univ. of Pav ia
I t aly

DO M I NI Q U E SC HREUR S
Kat ho lieke Un iv. L euven

Belgium

CHANG SI K Y O O
Hanya ng Univ .

Kor ea

LEI Z HU

Nanya ng Tec h. U niv.

Singap or e

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Digit al O bject I de nt if ier 10. 1 109/ L M WC . 2011. 2181 747t e signa l f or Q 1 ( u pper device )

Each pr ovide s op posit e polar it y of Vs / 2 acr os s t he load

 Q1 on, Q2 off, vo = Vs/2

Peak Reverse Voltage of Q2 = Vs

Q1 off, Q2 on, vo = -Vs/2
Waveforms with resistive load
 Portugal: C. PEIXEIRO
Princeton/Central Jersey: A. KATZ
Queensland: A. RAKIC
Look at the output voltage
Rio de Janeiro: J. BERGMANN
Rochester: S. CICCARELLI/
J. VENKATARAMAN
Romania: G. LOJEWSKI
Russia, Moscow: V. A. KALOSHIN
Russia, Nizhny: Y. BELOV
Russia, Novosibirsk: A. GRIDCHIN
Russia, Saint Petersburg:
M. SITNIKOVA
Russia, Saratov: N. M. RYSKIN
Russia, Tomsk: R. V. MESCHERIAKOV
Saint Louis: D. MACKE
San Diego: G. TWOMEY
rms value of the output voltage, Vo
Santa Clara Valley/San Francisco:
M. SAYED 1
Seattle: K. A. POULSON
To
2
2
Seoul: S. NAM
2 2
V V
Vo and
Serbia
Shanghai: J.T
Montenegro:dt
F. MAO4
s

A.MARINCIC
2
s

o 0
Singapore: A. ALPHONES

South Africa: C. VAN NIEKIRK

South Australia: H. HANSON
Fourier Series of the instantaneous output
voltage
ao
vo an cos(nt ) bn sin(nt )
2 n 1
ao , an 0
1 Vs
0
Vs
bn sin(nt )d (t ) sin(nt )d (t )
2 0
2
2Vs
bn n 1,3,5,...
n

2Vs
vo sin(nt )
n 1,3,5,.. n
rms value of the fundamental component

2Vs
vo sin nt
n 1,3,5,.. n

1 2Vs
Vo1
2
Vo1 0.45Vs
When the load is highly inductive
 Turn off Q1 at t = To/2
Current falls to 0 via D2, L, Vs/2 lower

+
Vs/2
-

+
Vs/2
-
 Turn off Q2 at t = To
Current falls to 0 via D1, L, Vs/2 upper

+
Vs/2
-

+
Vs/2
-
Load Current for a highly inductive load

Transistors are only switched on for a quarter-cycle, or 90

 Portugal: C. PEIXEIRO
Princeton/Central Jersey: A. KATZ
Fourier Series of the output current for an
Queensland: A. RAKIC
Rio de Janeiro: J. BERGMANN
RL load
Rochester: S. CICCARELLI/
J. VENKATARAMAN
Romania: G. LOJEWSKI
Russia, Moscow: V. A. KALOSHIN
vo v 2V
io
Z R jn L

oRussia, Nizhny: Y. BELOV
Russia, Novosibirsk: A. GRIDCHIN
s
sin(nt n )
n n R (n L)
1,3,5,...
Russia, Saint Petersburg:
2 2

M. SITNIKOVA
n LRussia, Saratov: N. M. RYSKIN
n tan (
1
)
Russia, Tomsk: R. V. MESCHERIAKOV
R Saint Louis: D. MACKE
San Diego: G. TWOMEY
Santa Clara Valley/San Francisco:
M. SAYED
Seattle: K. A. POULSON
Seoul: S. NAM
Serbia and Montenegro: A.MARINCIC
Shanghai: J. F. MAO
Singapore: A. ALPHONES
South Africa: C. VAN NIEKIRK
South Australia: H. HANSON
 Fundamental Output Power
In most cases, the useful power

Po1 Vo1 I o1 cos 1 I o21 R

2
2Vs
Po1 R
2 R ( L)
2 2
 DC Supply Current

If the inverter is lossless, average power

absorbed by the load equals the average
power supplied by the dc source.
T T

v (t )i (t )dt v (t )i (t )dt
0
s s
0
o o

For an inductive load, the current is

approximately sinusoidal and the fundamental
component of the output voltage supplies the
power to the load. Also, the dc supply voltage
remains essentially at Vs.
 DC Supply Current (continued)

T T
1
0 is (t )dt Vs
0
2Vo1 sin(t ) 2 I o sin(t 1 )dt I s

Vo1
Is I o cos(1 )
Vs
 Performance Parameters

Harmonic factor of the nth harmonic (HFn)

Von
HFn for n>1
Vo1

Von = rms value of the nth harmonic component

V01 = rms value of the fundamental component
 Performance Parameters (continued)

Total Harmonic Distortion (THD)

Measures the closeness in shape between a
waveform and its fundamental component

1
1
THD ( Von ) 2 2
Vo1 n 2,3,...
 Performance Parameters (continued)

Distortion Factor (DF)

Indicates the amount of HD that remains in a
particular waveform after the harmonics have
been subjected to second-order attenuation.
1

1
2 2
Von
DF
Vo1
2
n 2,3,... n


Von
DFn for n>1
Vo1n 2
 Performance Parameters (continued)

Lowest order harmonic (LOH)

The harmonic component whose
frequency is closest to the fundamental,
and its amplitude is greater than or equal
to 3% of the amplitude of the fundamental
component.
Single-phase full-bridge inverter
 Operational Details

Consists of 4 choppers and a 3-wire DC source

Q1-Q2 and Q3-Q4 switched on and off alternately
Need to isolate the gate signal for Q1 and Q3 (upper)
Each pair provide opposite polarity of Vsacross the load
Q1-Q2 on, Q3-Q4 off, vo = Vs

+ Vs -
Q3-Q4 on, Q1-Q2 off, vo = -Vs

- Vs +
When the load is highly inductive
Turn Q1-Q2 off Q3-Q4 off
Turn Q3-Q4 off Q1-Q2 off
Load current for a highly inductive load
 Example 6.3 MultiSim7

Q1 D1
1V0V DIODE_VIRTUAL
C1 D3 Q3
1000uF DIODE_VIRTUAL 1V0V

XFG1 R L C

10 Ohm 31.5mH
112uF

C2 Q4 D4
D2 Q2
1000uF 1V0V DIODE_VIRTUAL
DIODE_VIRTUAL 1V0V
 Example 6.3 using the scope
XSC1
G

T
Q1 D1
1V0V DIODE_VIRTUAL
A B

C1 D3 Q3
1000uF DIODE_VIRTUAL 1V0V

Vs XFG1 L C
220 V Rs R

1 Ohm 9 Ohm 31.5mH 112uF

C2 Q4 D4
D2 Q2
1000uF 1V0V DIODE_VIRTUAL
DIODE_VIRTUAL 1V0V