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Basic MOS Device Physics
Basic MOS Device Physics
Lecture 16
MSE 515
Topics
• MOS Structure
• MOS IV Characteristics
• CCD
Revolution and Evolution in Electronics
NMOS Structure
Substrate contact--to
reverse bias the pn junction
Connect to most negative supply voltage
in most circuits.
Source: the terminal that provides charge carriers.
(electrons in NMOS)
Drain: the terminal that collects charge carriers.
Short-Channel MOSFETs
Subthreshold Characteristics
• If the Polysilicon gate is atop the region of a LOCOS isolation where the oxide is
increasing in thickness.
• It is possible to form a channel under LOCOS away from the thin gate oxide!
This is quite important for devices with L < 1 mm.
CMOS Structure
NMOS PMOS
MOS IV Characteristics
• Threshold Voltage
• Derivation of I/V Characteristics
– I-V curve
– Transconductance
– Resistance in the linear region
• Second Order Effect
– Body Effect
– Channel Length Modulation
– Subthreshold conduction
Threshold Voltage
Saturation
Region Large VDS
Analog applications:
How does Ids respond to changes in VGS?
IDS vs VGS
0.13 um NMOS
VDS=0.6 V
W/L=12um/0.12 um
VB=VS=0
Y axis: Ids
X axis: Vgs
Different Expressions of
Transconductance
Channel Length Modulation
L is really L1
l [mm]
0.1 0.3 0.9 1.1 2.5 5 20
Silicon CCD & CMOS
HgCdTe
InSb
STJ Si:As
Silicon CCD
Similar physics for IR
materials
CCD Introduction
• A CCD is a two-dimensional array of metal-oxide-
semiconductor (MOS) capacitors.
• The charges are stored in the depletion region of
the MOS capacitors.
• Charges are moved in the CCD circuit by
manipulating the voltages on the gates of the
capacitors so as to allow the charge to spill from
one capacitor to the next (thus the name
“charge-coupled” device).
• An amplifier provides an output voltage that can
be processed.
• The CCD is a serial device where charge packets
are read one at a time.
33
Potential in MOS Capacitor
34
CCD Phased Clocking:
Summary
35
CCD Phased Clocking: Step 3
+5V
2 0V
1 -5V
+5V
2
3 1 0V
-5V
+5V
3 0V
-5V
36
CCD output circuit
37
Charge Transfer Efficiency
• When the wells are nearly empty, charge can be trapped by
impurities in the silicon. So faint images can have tails in the
vertical direction.
• Modern CCDs can have a charge transfer efficiency (CTE) per
transfer of 0.9999995, so after 2000 transfers only 0.1% of the
charge is lost.
constant
gm as function of region
0.13 um NMOS
VGS=0.6 V
W/L=12um/0.12 um
VB=VS=0
Y axis: gm
X axis: vds
saturation
linear
gds
0.13 um NMOS
VGS=0.6 V Slope due to
W/L=12um/0.12 um channel length
VB=VS=0 modulation
Y axis: gm
X axis: vds
saturation
linear
Body Effect
A nonzero VSB for NFET or VBS for PFET has the net effect
Of increasing the |VTH|
Experimental Data of Body
Effect
W/L=12 um/0.12um
CMOS: 0.13 um process
VDS=50 mV
Simulator: 433 mV
Alternative method: 376 mV
Subthreshold current
Subtreshold
region
NMOS
PMOS
I-V Characteristic Equations for
NMOS transistor
To produce a channel (VGS>VTH)
(Triode Region:
VDS<VGS-VTH)
Saturation: VDS>VGS-VTH
VTH as a function of VSB
Body effect coefficient
VSB dependent
(chain rule)
(Triode region)