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Electronic
Technology Basics
舰艇 电子技术基础
Teaching Plan
• 20 for theory
• 40 for experiment
NO. Learning unit Hours
1 Diode and applications 4
2 transistor amplifier circuit 4
3 Suite: Desk lamp 4
4 Integrated operational amplifier circuit 4
5 Suite: Radio 8
6 Suite: Christmas tree 4
7 The design of Integrated Counter 4
8 Application of 555 Timers 4
9 Contest 12
10 Suites: Speakers 8
11 Evaluation 4
RULES
• 1. One person one group.
• 2. Do not walk around during the course
of the experiment.
• 3. Pay attention to electricity safety.
• 4. During the break, do not be loud in the
corridor, do not walk around in our work
area at will .
• 5. At the end of class, please clean up the table
and be sure the experimental equipment placed in
the original location.
Introduction
• Electronics have become most important impetus
of modern technological growth and
development. The field of electronics deals with
the design and applications of electronic devices.
1 Electronic System
Antenna
Speaker
Electronic
system
2 Electronic Signal
t t
Analog signal Digital signal
An analog signal has a continuous
range of amplitudes over time.
A digital signal assumes only discrete
voltage values over time, A digital signal
has only two values, representing binary
logic state l (for high level) and binary logic
state 0 (for low level).
The output signal of a sensor is usually of
the analog type, and actuators often
require analog signal input to produce
the desired output.An analog signal can
be converted to digital form and vice
versa.(A/D or D/A )
3 Analog Signal Notation
iA A vAB = VDC+ vs
+ RL vab
vs ~ vAB 1K
VDC VDC
-
B t
(a (b
) )
Electronic Devices (电子器件)
• Semiconductor Diodes (半导体二极管)
半导体二极管
Diode
2 Physical Operation of Diode ( 二极管的物理
特性 )
二极管由半导体材料构成。
纯的半导体称为本征半导体。
To increase conductivity, controlled quantities of
materials known as impurities are introduced into
pure semiconductors, creating free electrons or holes.
A semiconductor to which impurities have been added
is referred to as extrinsic.
extrinsic Two types of impurities are
normally used: n-type,
n-type such as phosphorus, antimony,
and p-type,
p-type such as: boron, gallium.
为增加半导体的导电性,在本征半导体中加入杂质,就
可以产生自由电子和空穴,从而增加导电性。
此时半导体称为杂质半导体,根据加入杂质的不同可以
将半导体分为: N 型半导体 ( 磷、锑 ) 和 P 型半导体(硼
、镓)。
The removal of the
redundant electron causes
the impurity atom to
exhibit a positive charge.
Free electron
+4 +4 +4
n-type
+ + + +
+4 +5 +4
+ + + +
+4 + + + +
+4 +4
The electrons are the majority
phosphorus carriers and the holes are the
minority carriers.
磷原子
boron
hole
P -type
+4 +4 +4
- - - -
+4 +3 +4 - - - -
- - - -
+4 +4 +4
The holes are the majority
carriers and the electrons are
the minority carriers.
Diode Junction ( PN 结)
+ + + - - -
+ + + - - -
+ + + - - -
+ + + - - -
At room temperature, the electrons, which are
majority carriers in the n-region, diffuse from the
n-type side to the p-type side; the holes, which
are majority carriers in the p-region, diffuse from
the p-type side to the n-type side.
n-type p-type
+ + + - - -
+ + + - - -
+ + + - - -
+ + + - - -
The electrons and holes will recombine near the junction
and thus cancel each other out. There will be opposite
charges on each side of the junction, creating a depletion
region, or space-charge region.
n-type p-type
+ + + - - -
+ + + - - -
+ + + - - -
+ + + - - -
3 Forward-biased pn junction(pn 结
正偏 )
A junction is said to be forward biased if the p-side is
made positive with respect to the n-side, as depicted in
figure.
Depletion region
I DR
n-type IDF p-type
+ + + + - - - -
A + + + + - - - -
+ + + + - - - -
i
D + + + + - - - -
vD
If the applied voltage is increased, the potential
barrier is reduced, and large number of
holes(electrons) flow from the p(n)-side to the n(p)-
side.The resultant diode current increases, the
ohmic resistances of junction drop. When the
voltage is increased further, the potential barrier
will become low.
Depletion region
I DR
n-type IDF p-type
+ + + + - - - -
A + + + + - - - -
+ + + + - - - -
i
D + + + + - - - -
vD
4 Reverse-Biased pn junction(pn 结
反偏 )
diffusion current IDF: negligible
The reverse current IDR(reverse saturation or
leakage current)
current will be due to the drift current
IS (small) Depletion region
I DF I DR
n-type p-type
+ + + + - - - -
A - - - - K
+ + + +
+ + + + - - - -
is
+ + + + - - - -
vD
5 Characteristic of Practical Diode
(二极管的伏安特性)
The voltage-versus-current characteristic of a practical
diode is the relationship between the current through it
and the voltage across its terminals.
i
二极管表现出这样的特性,就是加在其两端的电压
与流过其的电流是非线性关系。然而,我们可以通
过一个非常简单等效模型来分析它。
The model of the diode( 二极管模型)
i u UD u UD
Practical diode
UD
(实际二极管)
u
U D
i u>0 u<0
Ideal diode
(理想二极管)
u
judge the state of diode
1 ) take it out then judge
( V=VD(on) );
else Diode conduct off ( open )
VAO=?
VD1 = 12V
VD1 = -6V
D1 off
VAO = -6V
6 applications of diodes (二极管的应
用)
• Rectifiers 整流
• Clipper circuit 限幅
• Clamp circuit 钳位
(1) Diode rectifiers 二极管整
流器
D1
+
+ vo
R
vs vo
E1
- - ωt
8 Clamping Circuits
钳位电路将输出电压固定在一个固定的值
VA = 0V , VB = 3V , Von = 0.7V ,VF = ?
+12v
R
DA
VA
VB VF
DB
Clamp circuit
(钳位电路)
Summary (概述)
• Pn junction ( PN 结)
• Diode device (二极管)
• v-i characteristic (二极管的伏安特
性)
• Diode model (二极管的模型)
• applications of diodes( 二极管的应用 )