as a one-way valve it means it allow current to flow in one direction. •These diodes are manufactured by the semiconductor materials germanium, silicon and selenium. •Operation of diode can be classified in two ways, if it allows the current then it is forward biased otherwise it is reverse biased. Light Emitting Diode (LED) Specification Of LED 1. Low offset voltage:+-0.5mV 2. Low offset voltage drift:+-2microV/C 3. Low noise:33nV 4. High common mode rejection:110dB 5. Low bias current:+-10pA 6. Rail-to-rail output 7. Wide BW:1MHZ 8. High slew rate:3V/micro sec 9. Wide supply:+2.25V to+20V Schottky diode Specification of schottky diode 1. Max recurrent peak reverse voltage:40V 2. Maximum dc blocking voltage:40V 3. Avg forward current:15A 4. Peak FW surge current:500A 5. Maximum instantaneous reverse current:250mA 6. Maximum instantaneous FW vtg:0.5V 7. Reverse recovery time:1nS Step Recovery Diode Specification of step recovery diode 1. Wide selection of Tightend capacitance ranges 2. Low transition time 3. High efficiencies 4. Storage temperature:-65Cto+200C 5. Operating temperature:-55C to+150C 6. MIN vtg breakdown:15,20,30 and 40V at 10 micro A Tunnel Diode Specification of tunnel diode 1.Surface mount device avilable 2.Temperature stability,uniformity 3.Avilability in 5% or 10% tolerance on peak point current 4.Storage temperature:-65to+200C 5.Max reverse current:2.0mA Laser Diode Specification of laser diode 1. Operating temperature:-10 to 40C 2. Storage temp:-15 to 85C 3. Output power:5mW 4. MAX operating vtg:2.2 and 2.7V 5. Threshold current:30mA 6. Operating current:65 to 80mA Avalanche Diode Specification of Avalanche diode 1. Dc power dissipation: 400mW 2. Junction temperature:-65 to +175C 3. Voltage: 4.8min 5.1 typ 5.4 max PIN Diode Specification of pin diode 1.Low capacitance 2.High breakdown vtg 3.Sensitive photodetection 4.Carrier storage Gunn Diode Specification of gunn diode • BW:2% of RF center frequency • Operating frequency:1 to 100GHz • Output power:100 to 200w • Basic semicondctor:GaAs Zener diode Specification of zener diode 1. DC power dissipation:400mV 2. Junction temperature:-65 to+175C 3. Voltage:4.8min,5.1typ,5.4max