Introduction

•Diodes are electronic components functions

as a one-way valve it means it allow current to
flow in one direction.
•These diodes are manufactured by the
semiconductor materials germanium, silicon
and selenium.
•Operation of diode can be classified in two
ways, if it allows the current then it is forward
biased otherwise it is reverse biased.
Light Emitting Diode
(LED)
 Specification Of LED
1. Low offset voltage:+-0.5mV
2. Low offset voltage drift:+-2microV/C
3. Low noise:33nV
4. High common mode rejection:110dB
5. Low bias current:+-10pA
6. Rail-to-rail output
7. Wide BW:1MHZ
8. High slew rate:3V/micro sec
9. Wide supply:+2.25V to+20V
Schottky diode
 Specification of schottky diode
1. Max recurrent peak reverse voltage:40V
2. Maximum dc blocking voltage:40V
3. Avg forward current:15A
4. Peak FW surge current:500A
5. Maximum instantaneous reverse
current:250mA
6. Maximum instantaneous FW vtg:0.5V
7. Reverse recovery time:1nS
Step Recovery Diode
 Specification of step recovery diode
1. Wide selection of Tightend capacitance
ranges
2. Low transition time
3. High efficiencies
4. Storage temperature:-65Cto+200C
5. Operating temperature:-55C to+150C
6. MIN vtg breakdown:15,20,30 and 40V at 10
micro A
Tunnel Diode
 Specification of tunnel diode
1.Surface mount device avilable
2.Temperature stability,uniformity
3.Avilability in 5% or 10% tolerance on peak
point current
4.Storage temperature:-65to+200C
5.Max reverse current:2.0mA
Laser Diode
 Specification of laser diode
1. Operating temperature:-10 to 40C
2. Storage temp:-15 to 85C
3. Output power:5mW
4. MAX operating vtg:2.2 and 2.7V
5. Threshold current:30mA
6. Operating current:65 to 80mA
Avalanche Diode
 Specification of Avalanche
diode
1. Dc power dissipation: 400mW
2. Junction temperature:-65 to +175C
3. Voltage: 4.8min
5.1 typ
5.4 max
PIN Diode
 Specification of pin diode
1.Low capacitance
2.High breakdown vtg
3.Sensitive photodetection
4.Carrier storage
Gunn Diode
 Specification of gunn diode
• BW:2% of RF center frequency
• Operating frequency:1 to 100GHz
• Output power:100 to 200w
• Basic semicondctor:GaAs
Zener diode
Specification of zener diode
1. DC power dissipation:400mV
2. Junction temperature:-65 to+175C
3. Voltage:4.8min,5.1typ,5.4max