Physics and Modeling of Microelectronic Devices

MEL ZG631
Lecture-05
Dr. Nilesh Goel
BITS Pilani Department of Electrical and Electronics
BITS Pilani Dubai Campus
Pilani|Dubai|Goa|Hyderabad
nileshgoel@dubai.bits-Pilani.ac.in

1
Disclaimer

The material in this presentation is gathered from a large number of

textbooks, online and other resources. The copyright is held by the
respective authors. No originality of any nature is claimed here as this
material is available in public domain. The material is arranged in its
present form purely for instructional/educational purposes and should
not be used for any other purpose.
Nilesh Goel
MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 2
Outline Lecture-05 Carrier Transport Phenomenon
Carrier Drift
• Drift Current density
• Mobility
• Conductivity
• Velocity Saturation
Carrier Diffusion
• Diffusion Current Density
• Total Current Density
Graded Impurity Distribution
• Induced Electric Field
• The Einstein Relation
Hall Effect

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 3
Carrier Transport Phenomenon
■ Describe the mechanism of carrier drift and induced drift current due to an applied electric
field.

■ Define and describe the characteristics of carrier mobility.

■ Describe the mechanism of carrier diffusion and induced diffusion current due to a gradient
in the carrier concentration.

■ Define the carrier diffusion coefficient.

■ Describe the effects of a non-uniform impurity doping concentration in a semiconductor

material.

■ Discuss and analyze the Hall effect in a semiconductor material

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 4
Carrier Drift

• The process in which charge particles move because of an electric field is called drift.
• Charge particles will move at a velocity that is proportional to the electric field.

• The net drift of charge gives rise to a drift current.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 5
Drift Current Density
Volume charge density 𝜌 moving at an average drift velocity vd

mcp* is the conductivity effective mass of the hole.

where 𝜇p is the proportionality factor and is called the hole mobility.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 6
Drift Current Density
The mobility is an important parameter of the semiconductor since it
describes how well a particle will move due to an electric field.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 7
Problem
Question: Consider a gallium arsenide sample at 300 K with doping concentrations of Na=0 and Nd=1016
cm-3. Assume complete ionization and assume electron and hole mobility 8500 and 400 respectively.
Calculate the drift current density if the applied electric field is E=10 V/cm. Find Drift current density.
Solution:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 8
Mobility Effects

Integrating above we get

If 𝜏cp is the mean free path between two

Typical random behavior of a hole in a semiconductor
collisions, then
(a) without an electric field and (b) with an electric field

Average velocity of particles is

Mobility is impacted by lattice scattering (𝜇L) and
impurity ion scattering (𝜇I).

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 9
Mobility Effects

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 10
Mobility Effects

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 11
Learning Example
Electron mobility in silicon for:

Solution:-

NOTE: The results of this example show that the mobility values are strong functions of the doping
concentration and temperature. These variations must be taken into account in the design of
semiconductor devices.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 12
Conductivity

At higher temperatures, ni increases and begins to

dominate both the electron concentration and
conductivity.
For lower temperatures, the electron concentration
and conductivity decrease with decreasing temperature.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 13
Problems
Question: Determine the doping concentration and majority carrier mobility given the type and conductivity of a
compensated semiconductor. Consider compensated n-type silicon at T=300 K, with a conductivity of 16 (𝛺-cm)-
1 and an acceptor doping concentration of 10 17 cm-3. Determine the donor concentration and the electron mobility.

Solution:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 14
Homework Question
Question: Design a semiconductor resistor with a specified resistance to handle a given current
density. A silicon semiconductor at T=300 K is initially doped with donors at a concentration
of Nd=5x1015 cm-3. Acceptors are to be added to form a compensated p-type material. The
resistor is to have a resistance of 10 k𝛺 and handle a current density of 50 A/cm2 when 5 V is
applied.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 15
Velocity Saturation
At 300K

Saturation of Vd for Si & Ge

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 16
Velocity Saturation

GaAs:
Inter-valley transfer mechanism
results in a decreasing avg. Vd
of electrons with electric field.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 17
Carrier Diffusion

Charge particles move from a region of high concentration to a region of low concentration.
Such a flow of charge carriers is called carrier diffusion.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 18
Diffusion Current Density
Electron Diffusion Current Density is:- Hole Diffusion Current Density is:-

Question: Calculate the diffusion current density given a density gradient. Assume that, in an n-type gallium
arsenide semiconductor at T =300 K, the electron concentration varies linearly from 1x1018 to 7x1017 cm-3 over a
distance of 0.10 cm. Calculate the diffusion current density if the electron diffusion coefficient is Dn=225 cm2/s.
Solution:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 19
Total Current Density
Total current density due to drift and diffusion of both electrons and holes is:-

The electron mobility (𝜇n) is a measure, how well an electron moves in a semiconductor as a
result of the force of an electric field

Diffusivity (Dn) is a measure how well an electron moves in a semiconductor as a result of a

density gradient.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 20
Graded Impurity Distribution
There may be regions in a semiconductor which are Electric field for 1D is:
non-uniformly doped. Such a doping is called graded
doping.

Fermi level is constant for thermal equilibrium so

when we take the derivative with respect to x

Energy-band diagram for a semiconductor in thermal

equilibrium with a non-uniform donor
impurity concentration.
MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 21
Practice Question
Question: Determine the induced electric field in a semiconductor in thermal equilibrium, given a linear
variation in doping concentration. Assume that the donor concentration in an n-type semiconductor at
T=300 K is given by Nd(x)=1016 -1019x (cm-3) where x is given in cm and ranges between 0<x <1𝜇m
Solution:

NOTE: We may recall from our previous discussion of drift current that fairly small electric fields can
produce significant drift current densities, so that an induced electric field from non-uniform doping can
significantly influence semiconductor device characteristics.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 22
The Einstein Relation
This is the relation between two fundamental Question: Determine the diffusion coefficient
properties, diffusivity and mobility. given the carrier mobility. Assume that the
At Equilibrium :- mobility of a particular carrier is 1000 cm2/V-
s at T = 300K.
Solution:

Using:
NOTE: Although this example is fairly simple and
straightforward, it is important to keep in mind the
relative orders of magnitude of the mobility and
diffusion coefficient. The diffusion coefficient is
approximately 40 times smaller than the mobility at
room temperature.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 23
The Hall Effect
It is a consequence of the forces that are exerted
on moving charges by electric & magnetic fields.
Applications in Semiconductor:
• Sign of charge carrier → distinguish between p-
type or n-type semiconductor
• Charge carrier density
• Charge carrier mobility
• Energy gap

Force on a particle having a charge q and moving

in a magnetic field is Induced electric field in the y direction is called the
Hall field. The Hall field produces a voltage across the
The magnetic field force will be exactly balanced semiconductor which is called the Hall voltage.
by the induced electric field force: where EH is assumed positive in the +y direction and VH
is positive with the polarity shown above.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 24
The Hall Effect
In a p-type semiconductor, in which holes are the For an n-type semiconductor, the Hall voltage is given
majority carrier, the Hall voltage will be positive. by
In an n-type semiconductor, in which electrons are the
majority carrier, the Hall voltage will have the opposite
polarity.
Using last two equations, we can write
For a p-type semiconductor, we can write
For a p-type semiconductor, the drift velocity of holes
can be written as

Current density is:

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 25
Hall Effect Equations Summary

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 26
Hall Effect Practice Question
Question: Determine the majority carrier concentration and mobility, given Hall effect parameters.
Consider the geometry shown above. Let L=10-1cm, W=10-2cm, and d=10-3cm. Also assume that Ix=1.0
mA, Vx=12.5 V, Bz=500 gauss = 5x10-2 tesla, and VH = - 6.25 mV.
Solution:

NOTE: It is important to note that the MKS units must be used consistently in the Hall effect equations
to yield correct results.

MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus BITS Pilani, Deemed to be University under Section 3 of UGC Act, 1956 27
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Thank You
See you next class
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MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus