Professional Documents
Culture Documents
Air
gap
Drive
Ith
PEAK
TTL Array
Switching -12
INPUT Drive* Array
Driver
Is
PEAK current
set
V sense
Diff. Amp.
Rsense
Power
-12
Converter
Vc Loop
P.W.M.
Filter
See:
1. B. Santarelli and M. Thompson, U.S. Patent #5,123,023, "Laser Driver with Plural Feedback Loops," issued June 16, 1992
2. M. Thompson, U.S. Patent #5,444,728, "Laser Driver Circuit," issued August 22, 1995
3. W. T. Plummer, M. Thompson, D. S. Goodman and P. P. Clark, U.S. Patent #6,061,372, “Two-Level Semiconductor Laser
Driver,” issued May 9, 2000
4. Marc T. Thompson and Martin F. Schlecht, “Laser Diode Driver Based on Power Converter Technology,” IEEE
Transactions on Power Electronics, vol. 12, no. 1, Jan. 1997, pp. 46-52
Power Electronics Introduction to Power Electronics 10
Magnetically-Levitated Flywheel Energy Storage
• For NASA; P = 100W, energy storage = 100 W-hrs
S N N S
Flywheel (Rotating)
N
N S S
Stator Winding
N S
N
S
N S
N
S
N S S N
S N N S
r
M. T. Thompson, R. D. Thornton and A. Kondoleon, “Flux-canceling electrodynamic maglev suspension: Part I. Test fixture
design and modeling,” IEEE Transactions on Magnetics, vol. 35, no. 3, May 1999 pp. 1956-1963
Reference: http://www.magnetarcorp.com
Reference: S. Druyea, S. Islam and W. Lawrance, “A battery management system for stand-alone photovoltaic energy
systems,” IEEE Industry Applications Magazine, vol. 7, no. 3, May-June 2001, pp. 67-72
Reference: P. Maige, “A universal power supply integrated circuit for TV and monitor applications,” IEEE Transactions
on Consumer Electronics, vol. 36, no. 1, Feb. 1990, pp. 10-17
Reference: H. Matsuki, Y. Yamakata, N. Chubachi, S.-I. Nitta and H. Hashimoto, “Transcutaneous DC-DC
converter for totally implantable artificial heart using synchronous rectifier,” IEEE Transactions on Magnetics,
vol. 32 , no. 5, Sept. 1996, pp. 5118 - 5120
Reference: http://www.cameca.fr/doc_en_pdf/oral_sims14_schuhmacher_ims1270improvements.pdf
Reference: N. Holonyak, Jr., “The Silicon p-n-p-n Switch and Controlled Rectifier (Thyristor),” IEEE Transactions on
Power Electronics, vol. 16, no. 1, January 2001, pp. 8-16
Reference: B. J. Baliga, “Trends in Power Semiconductor Devices,” IEEE Transactions on Electron Devices, vol. 43,
no. 10, October 1996, pp. 1717-1731
Power Electronics Introduction to Power Electronics 41
Selected History of Power Switching Devices
• 1982 - Insulated Gate Bipolar Transistor (IGBT) introduced
Reference: B. J. Baliga, “Trends in Power Semiconductor Devices,” IEEE Transactions on Electron Devices, vol. 43,
no. 10, October 1996, pp. 1717-1731
Power Electronics Introduction to Power Electronics 42
Review of Basic Circuit Concepts
• Some background in circuits
• Laplace notation
• First-order and second-
order systems
• Resonant circuits,
damping ratio, Q
• Reference for this
material: M.
T. Thompson, Intuitive Analog
Circuit Design, Elsevier, 2006
(course book for ECE529) and
Power Quality in Electrical
Systems, McGraw-Hill, 2007 by
A. Kusko and M. Thompson
R1
+ R
vi + R2 vo +
- + R2
vi (s - v o(s)
-
) 1/(Cs) -
C
R2 1
Cs R2Cs 1
vo (s)
H (s) vi (s) (R1 R2 )Cs 1
R 1 R2 1
Cs
R 2.2 Risetime
h
1
h
Bandwidth R 0.35
f
h
fh
2
Power Electronics Introduction to Power Electronics 46
First-Order Step and Frequency Response
Step Response
0.8
Amplitude
0.6
0.4
0.2
0
0 1 2 3 4 5 6
Time (sec.)
Bode Diagrams
0
Phase (deg); Magnitude
-10
-20
-20
-40
-60
(dB)
-80
-1 0 1
10 10 10
Frequency(rad/sec)
1
Natural frequency n LC
Damping ratio
n RC 1 R 1 R
2 2 L 2 Zo
C
Power Electronics Introduction to Power Electronics 48
Second-Order System Frequency Response
1
H ( j )
2 ⎛
2 ⎞⎟
j
n ⎜⎝⎜1 n2 ⎠⎟
1
H ( j )
⎛ 2 ⎞
2 ⎛ 2 2
⎞⎟
2 ⎟
⎜⎝ n ⎟⎠⎟ ⎜1 n ⎠
⎜
⎝⎜
⎛ 2
⎜ ⎞
1 ⎞⎝
n ⎠ ⎛ 2
H ( j ) tan ⎛⎟ tan ⎝⎜⎜
1 n
2
⎞⎟ 2
n 2 ⎟⎠
⎟ ⎜⎜1 2 ⎟
⎝ n⎠
30
20
10
0
-10
-20
Phase (deg); Magnitude
-30
-40
0
(dB)
-50
-100
-150
-1 0 1
10 10 10
Frequency(rad/
sec)
H 1
n 2
(s)
H (s) 2 n
1
H (s) 2
n
Q
1.8
1.6
1.4
1.2
Amplitude
0.8
0.6
0.4
0.2
00 1 2 3 4 5 6 7 8 9 10
Time (sec.)
n
x
x x
2 poles
x j n
+
vc C L
-
Now, we can find the resonant frequency by guessing that the voltage v(t) is
sinusoidal with v(t) = Vosint. Putting this into the equation for capacitor voltage
results in:
1
2 sin(t) LC
sin(t )
This means that the resonant frequency is the standard (as expected) resonance:
1
r2
LC
Power Electronics Introduction to Power Electronics 56
Energy Methods
iL
+
vc C L
-
1 1 2
CVo LI o
2
2 2
+
vc C L
-
What does this mean about the magnitude of the inductor current ? Well,
we can solve for the ratio of Vo/Io resulting in:
Vo
L
Io CZ
o
+
vc C L
-
1
1 1
v (s)
H (s) vo(s) Cs LCs RCs 1 s 2
2
i 1 2s 1
R Ls Cs 2
n
n
1
n
LC
n RC 1 R 1 R
2Z
L o
2
Power Electronics C
Introduction to Power Electronics 60
2
Resonant Circuit --- Underdamped
• With “small” resistor, circuit is underdamped
1
n 200 Mrad /
sec LC
f n 31.8 MHz
L
Z o C 5Ω
n RC 1 1 R
L 2 Zo
R 0.001
2
C
Power Electronics Introduction to Power Electronics 61
2
Resonant Circuit --- Underdamped Results
•This circuit is very underdamped, so we expect step
response to oscillate at around 31.8 MHz
• Expect peaky frequency response with peak near
31.8 MHz 1
n 200 Mrad /
sec LC
f n 31.8 MHz
L
Z 5Ω
o
C
RC 1 1 R
L 2 Zo
n
0.001
R
2 C
Power Electronics Introduction to Power Electronics 62
2
Resonant Circuit --- Underdamped Results,
Step Response
• Rings at around 31.8 MHz
expressed as v(t) = 15
0
Vpksin(t) 10
0
• = radian frequency 0
(rad/sec) -
50
• = 2f where f is in -
100
•VHz
RMS = Vpk/sqrt(2) = -
150
peaks at ±170V
[sec.
⎛ L
tan ⎜⎝ 1
R
⎞ ⎠ ⎟
- Phasor representation
- Angle
⎛⎜Im( A)
tan 1
⎝ ⎟ ⎠
⎞ Re( A)
- Magnitude of A
A Re( A) 2
Im( A) 2
I (3.5)2 (4.2)2
5.5A
180o
4.2 ⎞
tan1 ⎛⎜⎝ 50.2o
3.5
180o ⎠⎟ 50.2o 129.8o
5.5A129.8o
Power Electronics Introduction to Power Electronics 78
Converting from Polar to Rectangular Form
Re A A cos(
)
ImA A sin( )
Power Electronics Introduction to Power Electronics 79
Power
• “Power” has many shapes and forms
– Real power
– Reactive power
• Reactive power does not do real work
– Instantaneous power
p(t) v(t)i(t)
– Peak instantaneous power
– Average power
p(t) 1 T v(t)i(t)dt
T 0
V2
p(t)
PF 2R
VRMS I RMS ⎜ V ⎞⎛ V ⎟ 1
⎛
⎝
⎞
⎟⎜ 2 ⎝⎠ R 2
⎠
Power Electronics Introduction to Power Electronics 86
Causes of Low Power Factor --- Reactive Load
• Example: purely inductive load
– Voltage and currents 90o out of
phase
v(t) V sin t
V
i(t) L cost
V2
p(t) v(t)i(t) sin t cost
L
p(t) 0
⎜ 4 ⎟
THD ⎝ ⎞2 2⎠ 0.483
⎜ 4
⎛
⎞ 2
⎟
⎝
⎠
• Symmetrical triangle wave: THD = 12.1%
Power Electronics Introduction to Power Electronics 106
Half-Wave Rectifier, Resistive Load
• Simplest, cheapest rectifier
•Line current has DC component; this current appears in
neutral
• High harmonic content, Power factor = 0.7
P.F. Pavg
VRMS I RMS
VRMS V pk RI pk
2 2
1
I RMS I pk
2
2 2
I pk
R
PF
P 4 0.707
VRMS I RMS ⎛⎜ I ⎞⎛ ⎟⎜I pk 1
⎝
pk ⎠⎟ ⎠
R 2 ⎞ 2 2
Power Electronics Introduction to Power ⎝
Electronics 108
Half-Wave Rectifier, Resistive Load --- Spectrum
of Load Voltage
0.5
-0.5
-1
-1.5
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
1:10 Vout
120 VAC
AC
Reg.
C bus
ΔVbus
IL
I
• For <Vbus> = 7V and Io = 10A,
120Cbus
– Dropout voltage of regulator P = 20 Watts !
• Typically 0.25-1V
Switching Vo
Vbus
AC
Reg.
Cbus
+
Vi RL
vo(t) -
Vi
<vo(t)>
t
DT T T+DT
D L
+
Vi C RL
vo(t) -
Pout Ploss
L Vo
Vcc
+
C R
vc