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Part I:
The microscope
Sample preparation
Imaging
Part II:
Diffraction
Defects
Part III
Spectroscopy
Second electrons
sample Incoherent elastic From within the specimen (SEM)
backscattered electrons (SEM)
Characteristic
X-rays (EDS)
Auger electrons (XPS)
Visible light
Sample
Incoherent inelastic
Bremsstrahlung scattered electrons
X-rays (EDS) (EELS)
Direct beam
Incoherent elastic
(imaging, diffraction,
Coherent elastic forward scattered
EELS)
scattered electrons (STEM, Electrons (STEM,
Diffraction, EELS) diffraction,EELS)
The characteristic energy transitions
Observable with EELS and EDS
Valence electrons
M shell
L shell
K shell
3d
M shell 3p
3s Lα1
L2,3
2p
L shell
2s L1 EELS
Kα1 Kβ1 K
K shell 1s
EDS
M
L
Lα
kα
K
kβ
hν
L-edge (Si) M L K
– 2s and 2p orbital
Filled bands
Conduction band
Eb(L)=Eo-Eb(cond.band-L) Eb(K)=Eo-E(cond.band-K)
Energy Dispersive X-ray Spectroscopy
(EDS)
They removed the effects of variable specimen thickness by taking ratios of intensities
for elemental peaks and introduced a “k-factor” to relate the intensity ratio to
concentration ratio:
𝐶𝐴
𝐼𝐴
=𝐾 𝐴𝐵
𝐶𝐵 𝐼𝐵
Each pair of elements requires a different k-factor, which depends on detector efficiency,
ionization cross-section and fluorescence yield of the two elements concerned.
2. Sum peak:
Two photons will enter the detector at exactly the same time. The analyzer then
registers an energy corresponding to the sum of the two photons.
Condenser aperture
Fluorescent screen
Viewing screen
• Cherenkov losses
• Bremsstrahlung
• Plasmon losses
• Core losses
50xalh2_l ow.dat
h: Planck constant
Plasmon peak
N: n/V : Valence electron density
e: Elementary charge
2000
1900
1800
1700
Slice1
1600
1500
1400
1300
2 2
1200
𝐸 +𝐸 Counts
1100
√
1000
900
800
𝑎 𝑏
700
500
400
300
2
200
100
0
-5 0 5 10 15 20 25 30 35 40 45 50 55
Energy -Loss (eV)
Kundmann M., Introduction to EELS in TEM, EELS course 2005 San Francisco
Low-Loss EELS: Energy filtering
Kundmann M., Introduction to EELS in TEM, EELS course 2005 San Francisco
Low-Loss EELS: Energy filtering
Si
ITO
TEM image
Low-Loss EELS: Energy filtering
𝐼𝑝 t = thickness
𝑡=λ 𝑝 λp = plasmon mean free path
L-edge (Si) M L K
– 2s and 2p orbital
Filled bands
Conduction band
Eb(L)=Eo-Eb(cond.band-L) Eb(K)=Eo-E(cond.band-K)
Core-Loss EELS: Peak shape
STEM-SI EFTEM-SI
STEM-SI EFTEM-SI