Semiconductor

Laser
NAMES OF PROJECT MEMBERS:

Mayank Singhal (2028062)

Md Shifwan Khan (2028063)
Nigar Hussain (2028065)
Oindrila Ajha (2028066)
Priyavrat Tripathi (2028070)
TABLE OF CONTENTS

01 02
INTRODUCTION PRINCIPLE

03 04
CLASSIFICATION HOMOJUNCTION
Homojunction & Its Principle, Construction,
Heterojunction Diode Lasers Working & Drawbacks
TABLE OF CONTENTS

05 06
HETEROJUNCTION CHARACTERISTICS
Its Principle, Construction, Working,
Characteristics & Applications

07 08
COMPARISON ADVANTAGES
Homojunction &
Heterojunction
TABLE OF CONTENTS

09 10
DISADVANTAGES APPLICATIONS
 01
INTRODUCTION
INTRODUCTION

● Semiconductor laser (the first laser diode) was

demonstrated in 1962 by two US groups led by
Robert N. Hall at the General Electric research
center and by Marshall Nathan at the IBM T.J.
Watson Research Center.
● The semiconductor laser is made in mass
quantities from wafers of gallium arsenide or
similar crystals.
 02
PRINCIPLE
 PRINCIPLE

When the p-N Junction diode is Forward Biased (i.e) the p

end of the diode is connected to the positive terminal of the
battery and the N end is connected to the negative terminal
of the battery. The poles and electrons diffuse through the
junction and combine with each other; meanwhile light
radiations or photons are radiated. This is called
Recombination Radiation.
 03
CLASSIFICATION
 Classification

Homojunction Heterojunction
Diode Laser Diode Laser

Single Double
Heterojunction Heterojunction
 04
HomoJunction
 HOMOJUNCTION
SEMICONDUCTOR LASER
It is a diode laser. When PN junction is formed with single crystalline material. Then it is called as Homojunction
semiconductor laser.
Example: Ga As laser
Principle: When P-N junction diode is forward bias, at Junction holes and electron recombination occurs. Due to
recombination photons are emitted. This emitted photon stimulate further recombination and hence a laser output
obtained.
Construction: P-N junction diode laser is formed by heavily doped
GaAs with Ge (P-type) and GaAs with T(n type). The diode is extremely
small in size with 500 μm long and about 100 μm wide and thick. The
top and bottom face are provided with ohmic contact. The front and real
faces are polished parallel to each other and perpendicular to the plane
of the junction. This polished faces constitute a optical resonator.
 Working

● Since n-region and p-region are heavily

doped, the fermi level of p-region lies
within the valence band and fermi level of Fig: Energy level diagram
n-region lies within the conduction band.
At junction, the fermi level is uniform as
shown in figure.
 Drawbacks of
Homojunction Semiconductor

Homojunction devices require materials that can be doped both p- and n-type.
Many photovoltaic materials can be doped either p-type or n-type, but not
both. Again, because heterojunctions don't have this constraint, many
promising photovoltaic materials can be investigated to produce optimal cells.

Also, a high band gap window layer reduces the cell's series resistance. The
window material can be made highly conductive, and the thickness can be
increased without reducing the transmittance of light. As a result, light-
generated electrons can easily flow laterally in the window layer to reach an
electrical contact.
 05
HeteroJunction
 HETEROJUNCTION
SEMICONDUCTOR LASER
Heterojunction laser are those in which P end is made up of one type of semiconductor material and N end is
made up of another type of semiconductor material.
Example: GaAlAS Diode Laser
Principle: When a PN junction diode is forward biased, the electrons from the n region and holes from the p
region recombine with each other at the junction. During recombination process, light is released from certain
specified direct band gap semiconductors.
Construction:
Consists of five layers mainly:
1.GaAs- p type.
2.GaAlAs- p type.
3.GaAs- p type (active region).
4.GaAlAs- n type.
5.GaAs- n type.
 Working

● The end faces of the third layer is highly

polished and perfectly parallel to each
Fig: Energy level diagram
other to reflect the laser beam,one end is
partially polished to release the
continuous beam.
CHARACTERISTICS:
1. Active medium : PN junctions made from different layers.
2. Pumping method : Direct conversion method
3. Power output : The power output of laser beam is 1 mW
4. Nature of the Output : Continuous waveform
5. Wavelength of the output : Nearly 8000o A

APPLICATIONS:
1. This type of laser is mostly used in optical applications
2. It is widely used in computers, especially on CD-ROMs.
 06
CHARACTERISTICS
 Characteristics
● Most C lasers operate in 0.8 -0.9 Um or 1 - 1.7 Um spectral region
● Wavelength of emission determined by the band gap
● Different sc materials used for different spectral regions
● 0.8 - 0.9 Um : Based on Gallium Arsenide
● 1 - 1.7 Um : Based on indium Phosphide (lnP)
● Pumping method : Direct Conversion
● Hígh powerlasers usually (1 mV)
 07
COMPARISON
 COMPARISON
HOMOJUNCTION DIODE HETEROJUNCTION DIODE
LASER LASER
● P and n regions are made of the same ● P and n regions are made up of
diode material different diode material
● Active medium single-crystal of PN ● Active medium third layer of p type
Diode material among the five layers
● Pulse beam ● Continuous beam
● Wavelength 8300 Å from to 8500 Å ● Wavelength:8400 Å
● Example GaAs,InP ● Example: GaAs/GaAlAs,InP/InAIp
 08
ADVANTAGES
 ADVANTAGES

● Lightweight and portable.

● Battery supported ; easily replaceable
● Capability of direct modulation into Gigahertz region
● Small size and low cost
● Capability of Monolithic integration with electronic circuitry
● Compatibility with optical fibres
 09
DISADVANTAGES
 DISADVANTAGES

● Due to relatively low power production, these lasers are not suited to typical laser
applications
● The temperature affects greatly the output of the laser
● Beam divergence is much greater as compared to all other lasers
● Cooling system required in some cases
 10
APPLICATIONS
 APPLICATIONS

● Fiber optic communications

● Barcode readers
● Laser pointers
● Disc reader
● Laser printing and scanning
● Directional lighting sources
THANKS!

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