Cross Training

Junbin
2014/03/12

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Cross Training

 MOS Operation
 INV Operation
 NAND2 Operation

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Introduction of MOFET

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MOS Operation (ID-VDS)

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MOS Operation (ID-VDS)

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MOS Operation (ID-VGS)

ID

VG

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 Channel-Length Modulation
𝑉 𝐷𝑆 ≥ 𝑉 𝑂𝑉 =𝑉 𝐺𝑆 −𝑉 𝑡𝑛
The voltage (VDS) accelerates the electrons that reach the drain end of the channel.
The channel length is in effect reduced, from L to L-ΔL.

( )
1 𝑊 2 1 𝑊 λ′
𝐼 𝐷= 𝑘′𝑛
2 𝐿− ∆ 𝐿
( 𝑉 𝐺𝑆 −𝑉 𝑡 ) 𝐼 𝐷 = 𝑘′ 𝑛 1+ 𝑉 𝐷𝑆 ( 𝑉 𝐺𝑆 −𝑉 𝑡 )
2
2 𝐿 𝐿
1 𝑊 1 2 1 𝑊
¿ 𝑘′ 𝑛
2 𝐿 1 − ( ∆ 𝐿/ 𝐿)
( 𝑉 𝐺𝑆 − 𝑉 𝑡 ) 2
¿ 𝑘′ 𝑛 ( 𝑉 𝐺𝑆 −𝑉 𝑡 ) ( 1+ λ 𝑉 𝐷𝑆 )
2 𝐿
≅
1
2
𝑘 ′𝑛
𝑊
𝐿
1+ (
∆𝐿
𝐿
( )
𝑉 𝐺𝑆 −𝑉 𝑡 )
2

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Channel-Length Modulation

1 𝑊 2
𝐼 𝐷 = 𝑘′ 𝑛 ( 𝑉 𝐺𝑆 −𝑉 𝑡 ) ( 1+λ 𝑉 𝐷𝑆 )
2 𝐿
When ID=0, VDS = -1 / λ = -VA

For a given process, VA is proportional to the channel length L.

We can isolate the dependence of VA on L by expressing it as
𝑉 𝐴=𝑉 ′❑𝐴 𝐿

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Cross Training

 MOS Operation
 INV Operation
 NAND2 Operation

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INV Operation

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INV Operation

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Switching Point

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Switching Point

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Dynamic Operation

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Dynamic Operation

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Cross Training

 MOS Operation
 INV Operation
 NAND2 Operation

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NAND2 Operation

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NAND2 Operation

VDD

NAND
A B Y
0 0 1
Y 0 1 1
1 0 1
1 1 0
A

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 NAND2 Operation
VDD VDD

NAND NAND
A B Y A B Y
0 0 1 0 0 1
Y 0 1 1 Y 0 1 1
1 0 1 1 0 1
1 1 0 1 1 0
A=0 A=0

B=0 B=1

VDD VDD

NAND NAND
A B Y A B Y
0 0 1 0 0 1
Y 0 1 1 Y 0 1 1
1 0 1 1 0 1
1 1 0 1 1 0
A=1 A=1

B=0 B=1

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