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SEMICONDUCTOR DIODES

SEMICONDUCTOR DIODES
    

Introduction Ideal Diode Semiconductor Materials Extrinsic Materials Semiconductor Diode

SEMICONDUCTOR DIODES


Introduction
Diode is the simplest of semiconductor devices but plays a very vital role in electronics systems, with its characteristics that closely match those of a simple switch.  Diode schematic symbol:



where: Anode (+) Cathode (-) (-

SEMICONDUCTOR DIODES


Ideal Diode
An ideal diode is a perfect conductor (short-circuit) (shortin one direction, and a perfect resistor (close-circuit) (closein the other.  I-V characteristic curve


SEMICONDUCTOR DIODES


Ideal Diode (continuation)

SEMICONDUCTOR DIODES


Semiconductor Materials
Conductor any material that will support a generous flow of charge when a voltage source of limited magnitude is applied across its terminal.  Insulator any material that offers a very low level of conductivity under pressure from an applied voltage source.  Semiconductor therefore, a material that has a conductivity level somewhere between the extremes of an insulator and a conductor.


SEMICONDUCTOR DIODES


Semiconductor Materials (continuation)




Classification of Materials according to Conductivity Materials Conductivity


low intermediate high

# of valence e58 4 13

Insulator Semiconductor Conductor

SEMICONDUCTOR DIODES


Semiconductor Materials (continuation)




Characteristics of Semicon


With 4 valence e 

Silicon Germanium

Conductivity ( ) lies between conductor and insulator  Negative temperature coefficient (-) (


as the temperature (T) increases, the resistance (R) decreases

SEMICONDUCTOR DIODES


Semiconductor Materials (continuation)




Atomic Structure

Covalent bonding

SEMICONDUCTOR DIODES


Semiconductor Materials (continuation)


Intrinsic Materials are those semiconductors that have been carefully refined to reduce the impurities to a very low level essentially as pure as can be made available through modern technology.  Extrinsic Materials are those semiconductors that have been subjected to the doping process.  Doping - the addition of certain impurity atoms into the relatively pure semiconductor material.


SEMICONDUCTOR DIODES


Extrinsic Materials


N-type is created by introducing those impurity elements that have five valence electrons (pentavalent).
Pentavalent elements are those that belong to Group VA of the Periodic table (ie. phosphorus, antinomy, arsenic)  Donor atoms diffused impurities with five valence electrons


SEMICONDUCTOR DIODES


Extrinsic Materials (continuation)




2D Crystalline Structure of N-type NNet charge: neutral # of free e- > # of holes Minority carriers: holes Majority carriers: free eAt room temp, it is conductive At 100 C, it is more conductive Dopants: Phosphorus Arsenic Antinomy Bismuth

SEMICONDUCTOR DIODES


Extrinsic Materials (continuation)




P-type is formed by doping a pure germanium or silicon crystal with impurity atoms having three valence electrons (trivalent).
Trivalent elements are those that belong to Group IIIA of the Periodic table (ie. boron, gallium, indium)  Acceptor atoms diffused impurities with three valence electrons


SEMICONDUCTOR DIODES


Extrinsic Materials (continuation)




2D Crystalline Structure of P-type PNet charge: neutral # of free e- < # of holes Minority carriers: free eMajority carriers: holes At room temp, it is conductive Dopants: Boron Gallium Indium

SEMICONDUCTOR DIODES


Semiconductor Diode


Semiconductor diode is formed by simply bringing the N-type and P-type materials together. NP-

The electrons and holes in the region of the junction will combine resulting in a lack of carriers in the region near the junction.

SEMICONDUCTOR DIODES


Semiconductor Diode (continuation)

The region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region. The net charge on each side of the depletion region means that there is an intrinsic voltage drop across the junction.

SEMICONDUCTOR DIODES


Semiconductor Diode (continuation)




Biasing application of dc voltage of specific polarity to each terminal of the diode to acquire a certain operating condition.
No bias  Forward bias  Reverse bias


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