Thermal Stability of Transparent

ITO/n-Ga2O3/n+-Ga2O3/ITO
Rectifiers
Xinyi Xia , Fan Ren , Md Abu Jafar Rasel , Aman Haque and S.J. Pearton
1 1 2 2 3

1. Department of Chemical Engineering, University of Florida, Gainesville FL 32611 USA

2. Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
3. Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611 USA

Background Experimental Method

Indium tin oxide (ITO) is a transparent electrical
(a) (b)
conductor that is rare in the materials world.  It is a
promising transparent contact for Ga2O3.
Applications for transparent contacts on Ga2O3
devices has the ability to probe single event
radiation upsets using pulsed laser.
ITO (100 nm)
Ionizing Particle Pulsed laser Pulsed laser Si-doped Ga2O3 Epi (10 µm)
Transparent Sn-doped Bulk Ga2O3 (650 µm)
Metal ITO (200 nm)
contact contact Figure 2.(a) plan view optical image of
front-side ITO Schottky contacts (b)
photograph of transparent ITO/n- Figure 3.Schematic of transparent
Ga2O3/n+-Ga2O3/ITO rectifier. ITO/n-Ga2O3/n+-Ga2O3/ITO rectifier.

Figure 1.Schematic of conventional way with ionizing The thermal stability of transparent ITO/n-Ga2O3/n+-Ga2O3/ITO rectifiers was investigated up
particles (left) and with the pulsed laser (right) to
initiating the single event effect. to 500℃ to study if the ITO contacts on Ga2O3 can withstand a high operating temperature.

Results and Discussions

Figure 4.Resistivity of 200 nm thick ITO Figure 5. Forward I-V characteristics of ITO/n- Figure 6. Schottky barrier height and diode ideality
deposited on Si, as a function of subsequent Ga2O3/n+-Ga2O3/ ITO rectifier as a function of factor of ITO contacts as a function of annealing
annealing temperature in N2 ambient. annealing temperature in N2 ambient. temperature in N2 ambient.

Figure 7. Plot of RON after different annealing Figure 8. Reverse current density as a function Figure 9. Reverse breakdown voltage as a
temperatures in N2 relative to the value at 300K. of annealing temperature in N2. function of annealing temperature in N 2.

The ITO performs as a rectifying contact on lightly doped n-type Ga 2O3, while it is an Ohmic contact on heavily doped n+ Ga2O3. These structures
are stable to annealing at 300°C, beyond which the forward current density and reverse breakdown voltage suffer significant degradation.

Acknowledgments
This research is sponsored by the Defense Threat Reduction Agency (DTRA) as part of the Interaction of Ionizing Radiation with Matter University
Research Alliance (IIRM-URA) under contract number HDTRA1-20-2-0002