Minimization of Fluctuation of

Solar Cell Characteristics Above

Room Temperature using InN

Presented by:

Ali Hasan (202810002)

Shamim Hossain (183810015)
Md.Mahafus Hossain (183810003) Supervised by:
Dr. Md. Abdullah Al Humayun
Associate Professor, Department of EEE
Eastern University, Bangladesh
 OUTLINE
2

Introduction
Objective
Construction
Table Parameters
Materials & Methods
Result & Discussion
Future Work & Goal
3
INTRODUCTION

 Firstly ,effect of temperature of solar cell characteristics has been analyzed using Ge,
InN, and Si based semiconductor material. These characteristics are

 Open circuit voltage ,

 Short circuit current

 Output power

 Secondly, rate of change of these characteristics has also been analyzed.

 Finally, from the outcome of the comparative analysis it is ascertained that InN solar
cell is the most promising one.
4 Basic of Solar Cell

 The solar cell is the semiconductor device that converts the light energy into

electrical energy through the photovoltaic effect.

 Properties (short circuit current, Open circuit voltage, maximum power &

Efficiency).

 Solar cell used in Solar car, Space station , Satellite, PV power plant ,Residentials

home system.
5 OBJECTIVE

• To achieve best output efficiency of solar cell

• To find out suitable semiconductor material to design

solar cell with improved performance.

• To design rate of change Current, Voltage and Power with

respect to temperature of solar cell.
6 Construction & Working Principle

• Solar cell consists of n-type and p-type

semiconductor layer and hence there is
formation of p-n junction.

• The surface is coated with anti-reflection

coating to avoid the loss.

• A Proper metal contacts are made on the

n-type & p-type side of the semiconductor
for electrical connected.
Figure 1 : Basic Structure of Solar Cell
7 Parameters Table:
TABLE-1: PARAMETERS USED FOR Ge, InN & Si [1,2]

Material Ge InN Si
Eg(0)(eV) 0.7437 0.700 1.170
γ(meV/K) 0.477 0.414 0.473
β 235 545 636

[1] Van Zeghbroeck, B. V. (2010). Principles of semiconductor devices and

heterojunctions. Prentice Hall.

[2] Humayun, M. A., Rashid, M. A., Malek, F. A., & Hussain, A. N. (2012). Effect of lattice
constant on band-gap energy and optimization and stabilization of high-temperature In x
Ga1− x N quantum-dot lasers. Journal of Russian Laser Research, 33(4), 387-394.
8 Methods:
    
 RESULT AND DISCUSSION

Figure 2: The open circuit voltage of solar cell with respect to temperature. The Dash line, Dot line & Solid
line represents the open circuit voltage using Ge, InN and Si based solar cell respectively.
 RESULT AND DISCUSSION

Figure 3: Rate of change of open circuit voltage of solar cell with respect to temperature. The Dash line, Dot
line & solid line represents the open circuit voltage fluctuation using Ge, InN and Si based solar cell
respectively
 RESULT AND DISCUSSION

10

Figure 4: The short circuit current of solar cell with respect to temperature. The Dash line, Dot line & Solid
line represents the short circuit current variation using Ge, InN and Si based solar cell respectively
 RESULT AND DISCUSSION

10

Figure 5: The rate of change of short circuit current of solar cell with respect to temperature. The Dash
line, Dot line & Solid line represents the short circuit current variation using Ge, InN and Si based solar
cell respectively.
 RESULT AND DISCUSSION

11

Figure 6: The output power of solar cell with respect to temperature. The Dash line, Dot line & Solid line are
represents the output power fluctuation using Ge, InN and Si based solar cell respectively
 RESULT AND DISCUSSION

11

Figure 7: Rate of change of output power of solar cell with respect to temperature. The Dash line, Dot line &
Solid line represents the output power fluctuation using Ge, InN & Si based solar cell respectively
12 CONCLUSION

 This study highlights the improvement of the stability of the major three characteristics of
solar cell above room temperature.

 The comparison of the numerical results ascertain that the rate of change of open circuit
voltage, short circuit current and the output power have been reduced appreciably above
room temperature by using InN solar cell .

It is ascertained that InN material will be a suitable material for the improvement of solar
cell characteristics above room temperature.
13
FUTURE SCOPE

 Our researchers are looking for more environment friendly sources of energy ever
discovered. Solar energy is clean and is abundantly available.
 The proper utilization of solar energy is the major challenge to the researchers in
the period of modern science and technology particularly to protect global
warming and fossil fuel depletion.
THANK YOU !