ECEG-2131 (AEI): Diode Characteristics and modeling

Addis Ababa Institute of Technology (AAIT) School of Electrical and

Computer Engineering
Learning Outcomes

 At the end of the lecture, students should

be able to know about:
 Introduction to Diode.
 Semiconductor Diode.
 Ideal Diode vs Actual Diode.
 Modeling the Diode Forward Characteristic.
 Diode datasheet.

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What is Diode?
 Nonlinear device. (No linear r/ship b/n V & I)
 Two electrodes called the anode (+) and the
cathode (-).
 Conduct current in 1 direction only.
 Made with semiconductor materials such as
silicon, germanium, or selenium.
 Used as rectifiers, signal limiters, voltage
regulators, switches, signal modulators, signal
mixers, signal demodulators, and oscillators

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The pn Junction: At equilibrium

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The pn Junction: At equilibrium

The only elements left in the depletion region are ionized

donor or acceptor impurities.

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The pn Junction: Reverse Biased

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The pn Junction: Forward Biased

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What is Diode?

 The i–v characteristic of the ideal diode is

highly nonlinear.
 A nonlinear curve that consists of straight-line
segments is said to be piecewise linear.
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Ideal Diode
Equivalent Circuit Equivalent Cct in the FB
i ID
AnodeD Cathode

vD VD
ID ID > 0, VD = 0, R = 0

Equivalent Cct in the RB

Reverse Bias Forward Bias
(RB) ID
(FB)

0 VD
VD
I – V characteristic VD < 0, ID = 0, R =∞

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Example 1
 Find the values of I & V in the circuits of
Fig 1a and Fig 1b. Assume the diode is ideal.
+5V +5V

2.5 k 2.5 k

I I
V V Answers
(a) 2mA, 0 V
(b) 0 mA, 5 V
Fig 1a Fig 1b

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Diode Application: Rectifiers

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Diode Application: Logic Gate

OR gate AND gate

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Actual Diode

Three Distinct Regions

 Forward Bias, V > 0
D

 Reverse Bias, VD < 0

 Breakdown, VD < -vzk
VT VD
i
AnodeD Cathode

VD

Terminal or I – V characteristics

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Actual Diode
Forward-Bias Region
• ID exponentially & described by,
 VD nVT 
ID
I D  I s  e  1
VT  Knee, threshold,
firing potential  VD 
VT= 0.7V(Si),
I D  I se nVT
for I D >Is
0.3V(Ge)
kT
VT 
q
VD
VT Source:M Haris

I-V Characteristic
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Actual Diode
VD
kT
I D  I se nVT
VT 
q

Forward i–v characteristic varies with temperature.

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Actual Diode

Reverse-Bias and Breakdown Region

 Reverse Bias Region is described by,

I D  I s when VD < 0 and take note R = 

 Breakdown Region is when,

VD  Vzk
Zener breakdown voltage

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Actual Diode
Temperature Effects

• Temperature variation will

affect the magnitude of VD,
ID & IS .

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Actual Diode
DC or Static Resistance

• Exist when applying dc voltage

source across a diode. ID

VD
RD 
ID

ID VD

VD

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Actual Diode
Example 2
Determine the dc resistance levels for the diode at
ID = 2mA and at VD = - 10 V I (mA) D

a) At ID = 2mA, VD = 0.5V 20

VD 0.5V
RD    250 10
I D 2mA
b) At VD = -10 V, ID = -1 uA
-10V 2
VD 10V VD(V)
RD    10 M 1uA 0.5V 0.8V

I D 1uA
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 Modeling the Diode Forward Chx.
 Purpose: analyze circuit to find VD and ID
 Five models (refer, Sedra & Smith)
a) Exponential ( Load-line /Graphical)
b) Piecewise – linear
c) Constant Voltage Drop/ Simplified/ 0.7-V
d) Ideal- diode
e) Small-signal

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Exponential Model
 Exponential is the most accurate.
 But difficult to use due to nonlinearity.

Characteristic and operation defined by:

 VD nVT 
I D  I s  e  1
 
E  VD  I D R By KVL
 Solve these 2 eqtns using Load-line @ graphical.

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Load-Line/Graphical Analysis

(Q pt = Point of operation)

 Change level of R, intersection vertical , diff point of

intersection on axes.
 Extend line to x-y axis, gives IDQ and VDQ
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Load-Line Analysis
Example 3 Homework!
Diode characteristic of Figure a is given in Figure b
Determine a) VDQ b) IDQ c) VR

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 Piece-Wise Linear Model
 Simpler than Load-line analysis.
 Equivalent diode circuit using straight-line approximation.
 VT values?
-Only FB, VT  0.3V (Ge) or 0.7V (Si) or 1.2V (GaAs)
VT rav ID
ID
0.7V Ideal Diode
rav
VD
From the plot,
VD
ID= 0, VD <VT rav 
I D pt to pt VT
VD
ID= VD - VT /rav, VD >VT
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 Constant Voltage Drop/ Simplified/
Approximate
 Reduce diode model by assuming average resistance
rav, to be very small and can be ignored.
VT ID

Ideal Diode rav= 0 Ohm

ID 0.7V
VD
 During RB, diode O/C
VT VD
 VT values?
-Only FB, VT  0.3V(Ge) or 0.7V(Si) or 1.2V(GaAs)

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Ideal Model
 Further reduce diode model.
 Remove/Ignore rav and VT.
 During Forward-Bias, consider as a short
circuit.
I D
 During RB, diode O/C

Reverse Bias Forward Bias

(RB) (FB)
ID VD
0

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Class Exercise
Example 4
Given VDD = 5 V, R = 1 k, VT = 0.7 V, rav=20 . Find ID
and VD under the following assumptions:
a) Piecewise-linear
a) Simplified model
b) Ideal-diode model
R
ID

VT
VDD

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Small-Signal Model
 When sinusoidal (AC) input is
applied during FB operation
 Varying input will move
Q-point, therefore current
& voltage

Vd
rd 
I d
AC or Dynamic Resistance

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Small-Signal Model ID(mA)
Example 5
From the I-V curve, determine
The ac resistance at ID = 2mA 20

I d  4mA  0mA  4mA

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Vd  0.76V  0.65V  0.11V
4
Vd 0.11V
rd    27.5 2
VD(V)
I d 4mA 0.65V 0.76V

When considering the resistance of the semiconductor,

26mV
rd 
'
 rB rB  Body Resistance
ID
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Small-Signal Model

Average AC Resistance ID

For a broad swing of the

input signal.

Vd DId
rav 
I d
VD
DVd

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Diode Data Sheets
 For proper utilization of the material, each
parameter need to be considered carefully
when using a diode.
 The Forward Voltage, VF.
 The Maximum Forward Current, IF.
 The Reverse Saturation Current, IR.
 The Reverse-Voltage Rating (PIV).
 The Maximum Power Dissipation (P = IDVD).
 Capacitance Levels.
 Reverse Recovery Time, trr.
 Operating Temperature Range.
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What to Do This Week?

 Reading Assignment
 Types of Diodes
 Diode applications.

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