Professional Documents
Culture Documents
Semiconductor Device
Semiconductor Device
SECTION-a
14. Assertion : The resistivity of a semi-conductor increases with
temperature.
Reason : The atoms of semi-conductor vibrate with larger amplitude as
higher temperatures thereby increasing its resistivity.
(a) Both Assertion and Reason are correct and the Reason is a correct
explanation of the Assertion.
(b) Both Assertion and Reason are correct but Reason is not a correct
explanation of the Assertion.
(c) The Assertion is correct but Reason is incorrect.
(d) Both the Assertion and Reason are incorrect.
Assertion (A) : The depletion layer in the p-n junction is free from
mobile charge carriers.
Reason (R) : There is no electric field across the junction barrier.
(a) Both Assertion and Reason are correct and the Reason is a correct
explanation of the Assertion.
(b) Both Assertion and Reason are correct but Reason is not a correct
explanation of the Assertion.
(c) The Assertion is correct but Reason is incorrect.
(d) Both the Assertion and Reason are incorrect.
13. Assertion : If the temperature of a semiconductor is increased then
it’s resistance decreases.
Reason : The energy gap between conduction band and valence band is
very small.
(a) Both Assertion and Reason are correct and the Reason is a correct
explanation of the Assertion.
(b) Both Assertion and Reason are correct but Reason is not a correct
explanation of the Assertion.
(c) The Assertion is correct but Reason is incorrect.
(d) Both the Assertion and Reason are incorrect.
15. Assertion : The number of electrons in a p-type silicon
semiconductor is less than the number of electrons in a pure silicon
semiconductor at room temperature.
Reason : It is due to law of mass action.
(a) Both Assertion and Reason are correct and the Reason is a correct
explanation of the Assertion.
(b) Both Assertion and Reason are correct but Reason is not a correct
explanation of the Assertion.
(c) The Assertion is correct but Reason is incorrect.
(d) Both the Assertion and Reason are incorrect.
SECTION-b
Distinguish between n-type and p-type semiconductors.
Draw the voltage-current characteristic curve of a diode and mark its
important parameter.
Draw V I - characteristics of a p n - junction diode. Answer the following questions,
giving reasons:
(i) Why is the current under reverse bias almost independent of the applied potential
upto a critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name the important process that occurs during the formation of a p n
- junction. Explain briefly, with the help of a suitable diagram, how a p
n - junction is formed. Define the term ‘barrier potential’.
SECTION-C
Draw energy band diagram of n-typed and p-typed semiconductor at temperature T >0 K. Mark the donar and
acceptor energy level with their energies.
Distinguish between ‘Intrinsic’ and ‘extrinsic’ semiconductors?
23. What happens when a forward bias is applied to a p-n-junctions.
c
a
b
SECTION-E
What is rectifier ? How a p-n junction diode can be used in (1) forward
biased and (2) reverse biased mode ? Draw a labelled V -I characteristic of p
n - junction diode on a graph.
Draw the necessary energy band diagrams to distinguish between conductors,
semiconductors and insulators. How does the change in temperature affect the
behavior of these materials? Explain briefly.