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of 5 % Zn doped
BaCe0.7Zr0.1Y0.15Zn0.05O3-δ industrial
based thin film proton conducting
minerals for IT-SOFC
Ahmed Afif Bin Abedin
Faculty of Integrated Technologies
Universiti Brunei Darussalam
AUTHORS
• Overview
• Experimental & results
• Future work
• Conclusion
Overview
A novel method for the preparation of a thin film proton-conducting electrolyte is
presented.
The present work deals with the fabrication of 5 % Zn doped BaCe0.7Zr0.1Y0.15 Zn0.05O3-δ
(BCZYZn15) thin film electrolyte. Electrolyte materials were prepared by an acetate-
methoxyethanol solution method and examined by multilayer (4, 6, 8 times) coating on
silicon and anode (NiO- BaCe0.7Zr0.1Y0.15 Zn0.05O3-δ ) substrate at different temperatures.
A thin, dense, crack free BCZYZn15 electrolyte film was successfully obtained on a
dense anode by spin coating. Postmortem analysis by scanning electron microscope
(SEM) revels that no crack on 6 layers coating at 1100°C. Furthermore, this work shows
that, Zn doped BaCe0.7Zr0.1Y0.15 Zn0.05O3-δ dense thin film could be good industrial mineral
for IT-SOFC.
Samples
BaCe0.7Z0.1Y0.15Zn0.05O3-δ (BCZYZn15)-NiO, Where x = 0.15
electrolyte supported anode
• Sample Preparation
• XRD
• SEM
Preparation of solution:
Barium, Cerium, Zirconium acetate, Yttrium nitrate hexahydrate, Zinc Nitrate
Sample Preparation hexahydrate, Acetylacetone, polyvinylpyrrolidone, polyethylene glycol,
acetic acid, ammonium hydroxide and 2-Methoxyethanol were used to
prepare the BCZYZn solution.
Powders preparation:
o BaCe0.7Zr0.1Y0.15 Zn0.05O3-δ powders were
First, Ba-Ac and Ce-Ac powders was dissolved in acetic acid two separate
synthesized by Solid state reaction (SSR) method.
beaker at 230-250 ℃ and then cooled down to the room temperature.
Next, Zr-Ac, Y(NO3)3. 6H2O, Zn(NO3)2.6H2O, Acac, PVP, and PEG were added to
o Stoichiometric amount of BaCO3, CeO2, ZrO2, Y2O3 the solution and dissolved with stirring.
and ZnO were mixed by ball milling with acetone.
The pH of the solution was then adjusted to 4 with the addition of
o The finely ground dried materials were fired at
ammonium hydroxide. 2-Methoxyethanol was added to improve the
1000°C for 8 h and pellet sintered at 1200°C for 8
h. The final sintering temperature was 1400°C for wettability of the solution.
10 h. Thin film electrolyte preparation:
o NiO and BaCe0.7Zr0.1Y0.15 Zn0.05O3-δ powders with • First single crystal silicon were used as substrates for BCZYZn15 thin film
the 6:4 weight ratio and sintered at 1400°C for 10 deposition.
h. • The substrates were spin coated with chemical solution at the speed of
3000 rpm for 60 s using a Laurell spin-coater. After that, the coated substrates
were dried on a hot plate at 300 °C for 10 min.
• Subsequently, the samples were rapidly sintered in a pre-heated tube furnace.
Processing time and temperature were varied for parameter optimization. For
comparison, conventional sintering with ramping rate of 10 °C/min was also
carried out.
• After silicon substrate, NiO-BCZYZn15 anode substrate was used for final
characterization.
XRD
(a) BCZY2 and (b) BCZY3 with 5 mol% ZnO on BCZY4 with 5 mol% ZnO on anode substrate (c) 6
anode substrate with 6 layer coating layer & (d) 8 layer coaing
• solution 2 is better than others. • solution 4 is comparatively better solution and
that coating 6 is better than 4 and 8. All images
• The sintering is good. Grain compositions
show phase separation: one phase contains more
distribute properly. No secondary phase.
crack while the other one contains more pores.
Sintering is excellent except overgrowth of
grains. • Temp at 1100 ℃.
• Crack is visible.
Conclusion
• In this study, 5% Zn doped BaCe0.7Z0.1Y0.15Zn0.05O3 proton conducting
thin film electrolyte was successfully fabricated at relatively low
sintering temperature. It could be good industrial mineral for IT-SOFC
Next steps and future work
• To test power density & current density.
• To compare with other samples in same series.
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