MCBSD Micro Computer Based System Design

Memory Hierarchy
Cost/Bit

Registers

Access speed

Cache

Main Memory

Fixed Disk CD-ROM CD-RW

Capacity
2

Tape

Floppy

Tuesday, January 24, 2012

Semiconductor memory Characteristics:

Access times (read, write, erase):  Faster is better (varies from few ns to hundreds of ns) Access Times Volatility:  Ability to retain data after power is removed. Power consumption:  Less is better ( varies from nw to mw). Density:  Larger is better ( bit/sq.micron, transistors/bit). Cost:  Cheaper the better.
Tuesday, January 24, 2012

Memory organisation
Memory words
m words

m n memory

n bits per word

memory external view

r/w
enable

Memory 2kx n

A0 Ak-1

Qn-1

Q0

Tuesday, January 24, 2012

Memory organisation
A memory chip typically has:

m x n : m words/locations of n bits each. k = Log2(m) address input pins or m = 2^k words e.g., 4,096 x 8 memory:
32,768 bits 12 address input pins 8 bidirectional data pins

Tuesday, January 24, 2012

Memory organisation (contd)

Problems A given memory chip has 14 address lines and 4 data pins. Find: a) organization b) capacity. A 512K memory chip has 8 pins for data. Find: a) organization b) no of address pins on the memory chip.
Tuesday, January 24, 2012

Semiconductor Memory
Memory types:
Semiconductor memory

ROM

RAM

PROM EPROM EEPROM Flash Mask PROM PROM

SRAM DRAM NVRAM

Tuesday, January 24, 2012

PROM (programmable ROM)

PROM is a user-programmable memory
PROM is also referred to as OTP (one-time programmable). Programming ROM, also called burning ROM- a ROM burner or ROM programmer. For every bit of the PROM, there exists a fuse. If the information burned into PROM is wrong, that PROM must be discarded since its internal fuses are blown permanently.

Tuesday, January 24, 2012

PROM storage cell

1-bit cell

Tuesday, January 24, 2012

EPROM (erasable programmable ROM)

In EPROM, one can program the memory chip and erase it thousands of times. A widely used EPROM is called UV-EPROM UV stands for ultra-violet. UV-EPROM erasure is time consuming, takes 20 minutes. All UV-EPROM chips have a window that is used to shine ultraviolet (UV) radiation to erase its contents. To burn the ROM, ROM burner use 12.5V or higher Vpp.
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UV-PROM

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Programming & erasing a EPROM

To program a UV-EPROM chip : To burn code or data into EPROM, the ROM burner uses 12.5 volts, Vpp. To erase a EPROM: Placed in EPROM erasure equipment to expose it to UV radiation for 15-20 minutes
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EEPROM (electrically programmable PROM) EEPROMs method of erasure is electrical and therefore instant. A single byte can be erased.
PROM does not require an external erasure and programming device. Circuitry to program EEPROM is incorporated on the system board.Vpp -12.5V & 5V.

Tuesday, January 24, 2012

Priya Sawant

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Flash memory EPROM

Popular since early 1990. The erasure method is electrical, is done in flash. Programming can be done on the system board. So commonly called flash memory. The major difference between EEPROM and flash memory is Entire contents are erased in flash memory. In some flash memories erasure can be done block by block.

Tuesday, January 24, 2012

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Flash memory (contd)

Can flash memory replace part of the hard disk as a mass storage medium?
Widely used as a way to upgrade PC BIOS ROM. Access time of flash memory -100 ns; disk access time - tens of milliseconds. Flash memorys program/erase cycles must become infinite like hard disks & RAM.
Program/erase cycle refers to the number of times that a chip can be erased and programmed before it becomes unusable. The program/erase cycle is 100,000 for flash and EEPROM, 1000 for UV-EPROM.

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Mask ROM
Mask ROM : Not user-programmable, contents are programmed by the IC manufacturer. UV-EPROM or flash memory are used in the development phase, mask ROM is used in the final version. If an error in the data/code is found, the entire batch must be thrown away. Many 8051 manufacturers support mask version of the ROM.

Tuesday, January 24, 2012

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