Submitted by:

Japinder Pal Singh Kartic Joshi Kavish Gupta Abhimanyu Dhiman

It is programmable read only memory. It is a form of digital memory where the setting of each bit is locked by a fuse or antifuse. Such PROMs are used to store programs permanently. The key difference from a strict ROM is that the programming is applied after the device is constructed.

These types of memories are frequently seen in video game consoles, mobile phones, radiofrequency identification (RFID) tags, implantable medical devices, high-definition multimedia interfaces (HDMI) and in many other consumer and automotive electronics products.

A typical PROM comes with all bits reading as "1". Burning a fuse bit during programming causes the bit to read as "0". The memory can be programmed just once after manufacturing by "blowing" the fuses, which is an irreversible process. Blowing a fuse opens a connection while programming an antifuse closes a connection (hence the name). While it is impossible to "unblow" the fuses, it is often possible to change the contents of the memory after initial programming by blowing additional fuses, changing some remaining "1" bits in the memory to "0"s.

EPROM(Erasable programmable read only memory) EEPROM(Electrically erasable programmable memory).

Erasable PROM (EPROM)

Program with ultraviolet light Write multiple times, Read multiple times
Electrically Erasable PROM (EEPROM) Program with electrical signal Write multiple times, Read multiple times

It is erasable programmable read only memory. It is a type of memory chip that retains its data when its power supply is switched off. In other words, it is non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits.

Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light from a mercury-vapor light source. EPROMs are easily recognizable by the transparent fused quartz window in the top of the package, through which the siliconchip is visible, and which permits exposure to UV light during erasing.

Each storage location of an EPROM consists of a single field-effect transistor. Each field-effect transistor consists of a channel in the semiconductor body of the device. Source and drain contacts are made to regions at the end of the channel. An insulating layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited over the gate electrode.

The floating gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide. A control gate electrode is deposited and further oxide covers it.

To retrieve data from the EPROM, the address represented by the values at the address pins of the EPROM is decoded and used to connect one word (usually an 8-bit byte) of storage to the output buffer amplifiers. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting. Unlike EEPROMs, (Electrically Erasable Programmable Read-Only Memory) the programming process is not electrically reversible

. To erase the data stored in the array of transistors, ultraviolet light is directed onto the die. Photons of the UV light cause ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. Since the whole memory array is exposed, all the memory is erased at the same time. The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor fluorescent lighting over several years. Generally the EPROMs must be removed from equipment to be erased, since it's not usually practical to build in a UV lamp to erase parts incircuit.

 Advantage: It can be programmed with vital applications such as Operating Systems.

Disadvantage: Expensive