Uploads by Testste

3.3 KV SiC Power Module with Low Switching Loss

QTR Ch8 - Wide Bandgap TA Feb-13-2015

013006_1_online

Single-Event Effects in Silicon Carbide High Voltage Power Devices

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC.

Wide Band-Gap Semiconductor Based Power Electronics for Energy.

Infineon-Reliability of SiC Power Semiconductors-Whitepaper-V01 02-En