P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8

ZVP2110A

D G

E-Line TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE -100 -230 -3 20 700 -55 to +150 UNIT V mA A V mW C

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) -750 8 125 100 35 10 7 15 12 15 -100 -1.5 -3.5 20 -1 -100 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD -25V, I D=-375mA V DS=-25V, V GS=0V, f=1MHz I D=-1mA, V GS=0V ID=-1mA, V DS= V GS V GS= 20V, V DS=0V V DS=-100 V, V GS=0 V DS=-80 V, V GS=0V, T=125C (2) V DS=-25 V, V GS=-10V V GS=-10V,I D=-375mA V DS=-25V,I D=-375mA

Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf

(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test.

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Switching times measured with 50 source impedance and <5ns rise time on a pulse generator

( 3 )

ZVP2110A
TYPICAL CHARACTERISTICS
-1.6 VGS= -20V -16V -12V -10V -9V -8V -0.8 -7V -0.6 -6V -0.4 -0.2 0 0 -10 -20 -30 -40 -5V -4.5V -4V -4V -3.5V -50 -1.6 VGS= -20V -16V -12V -1.2 -1.0 -0.8 -7V -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -5V -4.5V -4V -3.5V -10 -6V -10V -9V -8V

ID(On) - Drain Current (Amps)

ID(On) - Drain Current (Amps)

-1.4 -1.2 -1.0

-1.4

VDS - Drain Source Voltage (Volts)

VDS - Drain Source Voltage (Volts)

Output Characteristics

Saturation Characteristics

VDS-Drain Source Voltage (Volts)

-8

-1.6

ID(On) Drain Current (Amps)

-1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 -10 VDS=-10V

-6

-4 ID= -0.5A -0.25A 0 0 -2 -4 -6 -8 -0.1A -10

-2

VGS-Gate Source Voltage (Volts)

VGS-Gate Source Voltage (Volts)

Voltage Saturation Characteristics

RDS(on)-Drain Source On Resistance ()

Transfer Characteristics

100

2.6

Normalised RDS(on) and VGS(th)

2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 VGS=-10V ID=-0.375A

VGS=-4V

-5V 10

-7V -10V

-20V

R ce an ist es R e urc -So ain Dr

Gate Thresh old

) (on DS

VGS=VDS ID=-1mA Voltage VGS (th

)

10

100

1000

20 40 60 80 100 120 140 160 180C

ID-Drain Current (mA)

On-resistance v drain current

Normalised RDS(on) and VGS(th) vs Temperature

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ZVP2110A
TYPICAL CHARACTERISTICS
250 250 VDS=-10V

gfs-Transconductance (mS)

200 150 100 50 0 0 -0.2 -0.4 -0.6 -0.8

gfs-Transconductance (mS)

200 150 100 50 0 0 -2 -4 -6 -8 -10 VDS=-10V

-1.0

-1.2

-1.4

-1.6

ID- Drain Current (Amps)

VGS-Gate Source Voltage (Volts)

Transconductance v drain current

Transconductance v gate-source voltage

VGS-Gate Source Voltage (Volts)

0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS= -25V -50V -100V ID=- 0.5A

80

C-Capacitance (pF)

60 Ciss 40

20 Coss 0 0 -20 -40 -60 -80 Crss -100

VDS-Drain Source Voltage (Volts)

Q-Gate Charge (nC)

Capacitance v drain-source voltage

Gate charge v gate-source voltage

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