CEP9060R/CEB9060R

CEF9060R
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP9060R 55V 10.5mΩ 100A 10V
CEB9060R 55V 10.5mΩ 100A 10V
e
CEF9060R 55V 10.5mΩ 100A 10V

D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.

G
D

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 55 V
Gate-Source Voltage VGS ±20 V
e
Drain Current-Continuous ID 100 100 A
a f e
Drain Current-Pulsed IDM 300 300 A
Maximum Power Dissipation @ TC = 25 C 200 75 W
PD
- Derate above 25 C 1.3 0.5 W/ C
Single Pulsed Avalanche Energy d EAS 480 480 mJ
Single Pulsed Avalanche Current d IAS 50 50 A
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 0.75 2 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W

2004.September http://www.cetsemi.com
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 CEP9060R/CEB9060R
CEF9060R
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units 4

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 55 V
Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V 25 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 62A 8.8 10.5 mΩ
On-Resistance
Forwand Transconductance gFS VDS = 25V, ID = 62A 30 S
c
Dynamic Characteristics
Input Capacitance Ciss 2690 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 798 pF
Reverse Transfer Capacitance Crss 113 pF
Switching Characteristics c
Turn-On Delay Time td(on) 37 75 ns
Turn-On Rise Time tr VDD = 28V, ID = 62A, 18 45 ns
VGS = 10V, RGEN = 4.5Ω
Turn-Off Delay Time td(off) 67 120 ns
Turn-Off Fall Time tf 16 40 ns
Total Gate Charge Qg 60 80 nC
VDS = 44V, ID = 62A,
Gate-Source Charge Qgs VGS = 10V 16 nC
Gate-Drain Charge Qgd 21 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS 62 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 62A 1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 260µH, IAS = 50A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .

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 CEP9060R/CEB9060R
CEF9060R
120 120
VGS=10,8,7V

100 100
ID, Drain Current (A)

ID, Drain Current (A)

80 VGS=6V 80

60 60

40 VGS=5V 40
25 C
20 20
VGS=4V TJ=125 C
-55 C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 3 4 5 6 7

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

3600 2.2
ID=62A
RDS(ON), On-Resistance(Ohms)

VGS=10V
3000 1.9
Ciss
C, Capacitance (pF)

RDS(ON), Normalized

2400 1.6

1800 1.3

1200 1.0
Coss

600 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS
Gate-Source Threshold Voltage

VGS=0V
IS, Source-drain current (A)

1.2 ID=250µA

2
VTH, Normalized

1.1 10

1.0

0.9
1
10
0.8

0.7

0
0.6 10
-50 -25 0 25 50 75 100 125 150 0.2 0.6 1.0 1.4 1.8 2.2

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEP9060R/CEB9060R
CEF9060R
3
10 10
VDS=44V
VGS, Gate to Source Voltage (V)

8
ID=62A
4

ID, Drain Current (A)

RDS(ON)Limit
2 100µs
10
6 1ms
10ms
DC
4
1
10

2
TC=25 C
TJ=150 C
0 Single Pulse
0 10
0 10 20 30 40 50 60 -1 0 1 2
10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
0.05 t1
0.02 t2
0.01 1. RθJC (t)=r (t) * RθJC
Single Pulse 2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
-2
4. Duty Cycle, D=t1/t2
10
-2 -1 0 1 2 3 4
10 10 10 10 10 10 10

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve

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