April 1998

FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
100 A, 30 V. RDS(ON) = 0.007 Ω @ VGS=10 V
RDS(ON) = 0.010 Ω @ VGS=5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.

_________________________________________________________________________________

Absolute Maximum Ratings T C = 25°C unless otherwise noted

Symbol Parameter FDP7030L FDB7030L Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1) 100 A
75
- Pulsed (Note 1) 300
PD Total Power Dissipation @ TC = 25°C 125 W
Derate above 25°C 0.83 W/°C
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
TL Maximum lead temperature for soldering purposes, 275 °C
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case 1.2 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

© 1998 Fairchild Semiconductor Corporation FDP7030L Rev.D1

Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 38 A 200 mJ
IAR Maximum Drain-Source Avalanche Current 38 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V

∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient

o
ID = 250 µA, Referenced to 25 C 36 mV/oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
TJ =125 °C 1 mA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 2 V

∆VGS(th)/∆TJ
o
Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 C -5 mV/oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 50 A 0.006 0.007 Ω
TJ = 125°C 0.009 0.011
VGS = 5 V, ID = 40 A 0.009 0.01
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
gFS Forward Transconductance VDS = 10 V, ID = 50 A 50 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 2150 pF
f = 1.0 MHz
Coss Output Capacitance 1290 pF
Crss Reverse Transfer Capacitance 420 pF
SWITCHING CHARACTERISTICS (Note 2)

tD(on) Turn - On Delay Time VDD = 15 V, ID = 75 A, 10 20 nS

Turn - On Rise Time VGS = 10 V, RGEN = 6 Ω 160 225 nS
tr
RGS = 10 Ω
tD(off) Turn - Off Delay Time 70 95 nS

tf Turn - Off Fall Time 140 195 nS

Qg Total Gate Charge VDS = 12 V 35 50 nC

ID = 50 A, VGS= 4.5 V
Qgs Gate-Source Charge 12 nC
Qgd Gate-Drain Charge 18 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current (Note 1) 100 A
ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 2) 300 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 50 A (Note 2) 1 1.3 V
TJ = 125°C 0.85 1.1
Notes
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

FDP7030L Rev.D1
Typical Electrical Characteristics

100 3
V GS = 10V 5.0
I D , DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
V GS =3.5V
8.0 4.5
80 6.0 2.5

R DS(ON) , NORMALIZED
4.0 4.0
60 2
4.5
40 1.5 5.0
3.5
6.0
20 8.0
1 10.0
3.0

0
0 0.5 1 1.5 2 2.5 0.5
0 20 40 60 80 100
V , DRAIN-SOURCE VOLTAGE (V)
DS I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate
Voltage.

0.025
1.6
ID = 50A ID =50A
DRAIN-SOURCE ON-RESISTANCE

R DS(ON) , ON-RESISTANCE (OHM)

V GS = 10V
RDS(ON) , NORMALIZED

1.4 0.02

1.2 0.015

25°C 125°C
1 0.01

0.8 0.005

0.6 0
-50 -25 0 25 50 75 100 125 150 175
2 4 6 8 10
TJ , JUNCTION TEMPERATURE (°C)
V GS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with

with Temperature. Gate-to-Source Voltage.

60 60
I S , REVERSE DRAIN CURRENT (A)

VDS = 10V VGS =0V

10
50
ID , DRAIN CURRENT (A)

TA = 125°C
40 1
25°C
30 0.1
T = -55°C
A -55°C
20 0.01
25

10 125°C
0.001

0
1 1.5 2 2.5 3 3.5 4 4.5 5 0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS , GATE TO SOURCE VOLTAGE (V)
VSD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDP7030L Rev.D1
 Typical Electrical Characteristics (continued)

10 5000
VGS , GATE-SOURCE VOLTAGE (V)

I D = 50A
VDS = 6.0V
3000
8 12V
24V Ciss

CAPACITANCE (pF)
2000

6 Coss

1000
4

500 Crss
2 f = 1 MHz
VGS = 0V
0 200
0 20 40 60 80
1 2 5 10 20 30
Q g , GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

500 8000
10
300 µs
10 SINGLE PULSE
0µ
s R θJC =1.2° C/W
I D , DRAIN CURRENT (A)

it 6000
100 Lim 1m TC = 25°C
N) s
(O 10
POWER (W)

50 R DS ms
10
0
20 DC ms 4000

10 V GS = 10V
5 SINGLE PULSE 2000
R θJC= 1.2 o C/W
2 T C = 25 °C
1 0
0.1 0.5 1 5 10 30 50 0.01 0.1 1 10 100 1000
V DS , DRAIN-SOURCE VOLTAGE (V)) SINGLE PULSE TIME (ms)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE

0.3 R θJC (t) = r(t) * RθJC

0.2
0.2 R θJC = 1.2 °C/W
0.1
0.1
0.05 P(pk)

0.05 t1
0.02 t2
0.03
0.01 TJ - TC = P * RθJC (t)
0.02
Duty Cycle, D = t1 /t2
Single Pulse
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
t 1 ,TIME (ms)

Figure 11. Transient Thermal Response Curve.

FDP7030L Rev.D1