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28377
iliicon N-Ch
Sil annel MOS
Cha OSFFET
Features
■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V
■ Ultra-low Gate charge(Typical 90nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This N-Channel enhancement mode power field effect transistors
are produced using Winsemi's proprietary, planar stripe ,DMOS
technology. This advanced technology has been especially tailored
to minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficiency switch mode power supplies.
Thermal Characteristics
Value
Symbol Parameter Units
Min Typ Max
RQJC Thermal Resistance , Junction -to -Case - - 0.46 ℃/W
RQJA Thermal Resistance , Junction-to -Ambient - - 40 ℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
K283
28377
Electrical Characteristics(Tc=25℃)
Characteristics Symbol Test Condition Min Type Max Unit
Gate leakage current IGSS VGS=±25V,V DS=0V - - ±100 nA
VDS=500V,VGS=0V - - 1 µA
Drain cut -off current IDSS
VDS=400V,Tc=125℃ 10
2/7
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Fig.1 On St
Staate Ch
Chaarac
actteristi
ticcs Fig.2 Transfer Curr
Curreent Ch
Chaarac
actteristi
ticcs
Fig.3 On-R es
esiistance Variation vs
n-Res Fig.4 Body Diode For ward Vol
Forw olttage
Dr
Draain Curr
Curreent and gate volt
oltaage Variation with Source Curr
Sourc Curreent and
Tem
empperature
aciitance Ch
Fig.5 Capac Chaarac
actteri
risstics Fig.6 Gate Ch
Chaarge Ch
Chaarac
actteristi
ticcs
3/7
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Fig.7 Br eak
Break
eakddown Vol
olttage Variation Fig.8 On-R es
esiistance Variation
n-Res
vs.Tem
emp perature
Fig..11 Transient Th
Fig Theerma
mall Res
espponse Cur
ons ve
Curv
4/7
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Fig.13 Res
Fig.1 esiisti
tivve Switching Tes
estt Circuit & Waveform
Circ
Fig.14
Fig.1 Un
Uncclam
ampped Indu
Induccti
tivve Switching estt
Tes Circuit
Circ &
5/7
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Fig.15 Pea
Fig.1 eakk Diode Rec
ecoovery dv/dt Tes
estt Circuit & Waveform
Circ
6/7
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TO-247 Packa
-24 ckagge Dim
Dimeension
Unit:mm
7/7
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