HGB105N15SL , HGP105N15SL P-1

150V N-Ch Power MOSFET

Feature
◇ High Speed Power Smooth Switching, Logic Level VDS 150 V
◇ Enhanced Body diode dv/dt capability RDS(on),typ TO-263 8.7 mΩ
◇ Enhanced Avalanche Ruggedness RDS(on),typ TO-220 9 mΩ
◇ 100% UIS Tested, 100% Rg Tested ID (Sillicon Limited) 122 A
◇ Lead Free ID (Package Limited) 120 A

Application
◇ Synchronous Rectification in SMPS
◇ Hard Switching and High Speed Circuit Drain
◇ Power Tools TO-263 TO-220 Pin2
◇ UPS
◇ Motor Control Gate
Pin 1

Src
Part Number Package Marking Pin3

HGB105N15SL TO-263 B105N15SL

HGP105N15SL TO-220 P105N15SL

Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)

Parameter Symbol Conditions Value Unit
TC=25℃ 122
Continuous Drain Current (Silicon Limited)
ID TC=100℃ 86 A
Continuous Drain Current (Package Limited) TC=25℃ 120
Drain to Source Voltage VDS - 150 V
Gate to Source Voltage VGS - ±20 V
Pulsed Drain Current IDM - 400 A
Avalanche Energy, Single Pulse EAS L=0.4mH, TC=25℃ 500 mJ
Power Dissipation PD TC=25℃ 333 W
Operating and Storage Temperature TJ, Tstg - -55 to175 ℃

Absolute Maximum Ratings

Parameter Symbol Max Unit
Thermal Resistance Junction-Case RƟJC 0.45 ℃/W
Thermal Resistance Junction-Ambient RƟJA 60 ℃/W

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 HGB105N15SL , HGP105N15SL P-2

Electrical Characteristics at Tj=25℃ (unless otherwise specified)

Static Characteristics
Value
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 150 - -
V
Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µA 1 1.9 3
VGS=0V, VDS=150V, Tj=25℃ - - 1
Zero Gate Voltage Drain Current IDSS µA
VGS=0V, VDS=150V, Tj=100℃ - - 100
Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, ID=20A TO-263 - 8.7 10.2
VGS=10V, ID=4.5A TO-263 - 9.5 12.3
Drain to Source on Resistance RDS(on) mΩ
VGS=10V, ID=20A TO-220 - 9 10.5
VGS=10V, ID=4.5A TO-220 - 9.8 12.5
Transconductance gfs VDS=5V, ID=20A - 80 - S
Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 0.7 - Ω

Dynamic Characteristics
Input Capacitance Ciss - 4059 -
Output Capacitance Coss VGS=0V, VDS=75V, f=1MHz - 302 - pF
Reverse Transfer Capacitance Crss - 11 -
Total Gate Charge Qg (10V) - 57 -
Total Gate Charge Qg (4.5V) - 26 -
VDD=75V, ID=20A, VGS=10V nC
Gate to Source Charge Qgs - 12 -
Gate to Drain (Miller) Charge Qgd - 10 -
Turn on Delay Time td(on) - 20 -
Rise time tr VDD=75V, ID=20A, VGS=10V, - 10 -
ns
Turn off Delay Time td(off) RG=10Ω, - 32 -
Fall Time tf - 12 -

Reverse Diode Characteristics

Diode Forward Voltage VSD VGS=0V, IF=20A - 0.9 1.2 V
Reverse Recovery Time trr - 95 - ns
VR=75V, IF=20A, dIF/dt=100A/µs
Reverse Recovery Charge Qrr - 285 - nC

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 HGB105N15SL , HGP105N15SL P-3

Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage

150 6V 4.5V 24
10V ID=20A
4V
3.5V 20
120

125°C
16
90

RDS(ON) (mΩ)
12
ID (A)

25°C
60

Vgs=3V 8

30
4

0
0 1 2 3 4 0
2 4 6 8 10
VDS (V)
VGS (V)

Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature

20 2.4
ID=20A
2.2
VGS=10V
Normalized On-Resistance

15 2

1.8 VGS=4.5V
VGS=4.5V

10 1.6
RDS(ON) (mΩ)

VGS=10V 1.4

5 1.2

0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C)

Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage

20 1.E+02
VDS=5V

16 1.E+01
125°C

25℃ 25°C
125℃
12 1.E+00
IS (A)
ID(A)

8 1.E-01

4 1.E-02

0 1.E-03
1 1.5 2 2.5 3 3.5 4 0.0 0.2 0.4 0.6 0.8 1.0

VGS(V) VSD (V)

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 HGB105N15SL , HGP105N15SL P-4

Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Typical Capacitance vs. Drain-to-Source Voltage

10 10000
VDS=75V
ID=20A
Ciss
8
1000

Capacitance (pF)
6
VGS (V)

Coss
100

4
Crss
10
2

0 1
0 10 20 30 40 50 60 0 20 40 60 80 100

Qg (nC) VDS (V)

Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature

150
Silicon Limited
10µs

100.0 120
100µs
RDS(ON) limited
Package Limited
Current rating ID(A)

1ms
10.0 90
DC 10ms
ID (A)

1.0 60

TJ(Max)=175°C
0.1 TC=25°C 30

0.0 0
0.01 0.1 1 10 100 0 25 50 75 100 125 150 175

VDS (V) TCASE (℃)

Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Case

10
Duty=Ton/T
Peak TJ=TC+PDM.ZθJC.RθJC

RθJC=0.45℃/W
ZθJC Normalized Transient
Thermal Resistance

1
Duty=0.5

0.3

0.1
0.1
0.05

0.03

0.01
single pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1

Pulse Width (s)

Ver 1.0 Aug.2017

 HGB105N15SL , HGP105N15SL P-5

Inductive switching Test

Gate Charge Test

Uclamped Inductive Switching (UIS) Test

Diode Recovery Test

Ver 1.0 Aug.2017

 HGB105N15SL , HGP105N15SL P-6

TO-220, 3 leads

Dimentions in mm unless otherwise specified

Symbol Min Nom Max
A 9.66 9.97 10.28
A2 9.80 10.00 10.20
B 15.60 15.70 15.80
C 12.70 13.48 14.27
D 4.30 4.50 4.70
E 9.00 9.20 9.40
F 2.54
G1 1.32 1.52 1.72
G2 0.70 0.82 0.95
G3 0.45 0.52 0.60
H 3.50 3.60 3.70
I 2.70 2.80 2.90
J 15.70 15.97 16.25
K 2.20 2.40 2.60
L 1.15 1.27 1.40
N 6.40 6.60 6.80

TO-263, 2 leads

Dimentions in mm unless otherwise specified

Symbol Min Nom Max
A 9.66 9.97 10.28
B 1.02 1.17 1.32
C 8.59 9.00 9.40
D1 1.14 1.27 1.40
D2 0.70 0.83 0.95
D3 5.08
E 15.09 15.24 15.39
F 1.15 1.28 1.40
G 4.30 4.50 4.70
H 2.29 2.54 2.79
I 0.25
K 1.30 1.45 1.60
a1 0.45 0.55 0.65
a2(degree) 0° 8°

Ver 1.0 Aug.2017