HGP045NE4SL P-1

45V N-Ch Power MOSFET

Feature VDS 45 V
◇ Optimized for high speed switching, Logic Level RDS(on),typ VGS=10V 3.5 mΩ
◇ Enhanced Body diode dv/dt capability RDS(on),typ VGS=4.5V 4.6 mΩ
◇ Enhanced Avalanche Ruggedness ID (Sillicon Limited) 114 A
◇ 100% UIS Tested, 100% Rg Tested
◇ Lead Free, Halogen Free
Application
◇ Synchronous Rectification in SMPS Drain
◇ Hard Switching and High Speed Circuit
◇ Power Tools TO-220
◇ UPS Gate
◇ Motor Control

Src
Part Number Package Marking
HGP045NE4SL TO-220 GP045NE4SL

Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)

Parameter Symbol Conditions Value Unit
TC=25℃ 114
Continuous Drain Current (Silicon Limited) ID A
TC=100℃ 80
Drain to Source Voltage VDS - 45 V
Gate to Source Voltage VGS - ±20 V
Pulsed Drain Current IDM - 350 A
Avalanche Energy, Single Pulse EAS L=0.3mH, TC=25℃ 60 mJ
Power Dissipation PD TC=25℃ 125 W
Operating and Storage Temperature TJ, Tstg - -55 to175 ℃

Absolute Maximum Ratings

Parameter Symbol Max Unit
Thermal Resistance Junction-Case RθJC 1.2 ℃/W
Thermal Resistance Junction-Ambient RθJA 50 ℃/W

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 HGP045NE4SL P-2

Electrical Characteristics at Tj=25℃ (unless otherwise specified)

Static Characteristics
Value
Parameter Symbol Conditions Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 45 - -
V
Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µA 1 1.8 2.2
VGS=0V, VDS=45V, Tj=25℃ - - 1
Zero Gate Voltage Drain Current IDSS µA
VGS=0V, VDS=45V, Tj=100℃ - - 100
Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, ID=20A - 3.5 4.5 mΩ
Drain to Source on Resistance RDS(on)
VGS=4.5V, ID=20A - 4.6 7.0 mΩ
Transconductance gfs VDS=5V, ID=20A - 40 - S
Gate Resistance RG VGS=0V, VDS Open, f=1MHz - 1.6 - Ω

Dynamic Characteristics
Input Capacitance Ciss - 2159 -
Output Capacitance Coss VGS=0V, VDS=20V, f=1MHz - 756 - pF
Reverse Transfer Capacitance Crss - 118 -
Total Gate Charge (10V) Qg (10V) - 42 -
Total Gate Charge (4.5V) Qg (4.5V) - 22 -
VDD=20V, ID=20A, VGS=10V nC
Gate to Source Charge Qgs - 4 -
Gate to Drain (Miller) Charge Qgd - 10 -
Turn on Delay Time td(on) - 12 -
Rise time tr VDD=20V, ID=20A, VGS=10V, - 10 -
ns
Turn off Delay Time td(off) RG=10Ω, - 41 -
Fall Time tf - 16 -

Reverse Diode Characteristics

Diode Forward Voltage VSD VGS=0V, IF=20A - 0.9 1.2 V
Reverse Recovery Time trr - 30 - ns
VR=20V, IF=20A, dIF/dt=200A/µs
Reverse Recovery Charge Qrr - 30 - nC

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 HGP045NE4SL P-3

Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage

120 12
10V 6V
110
8V 10
100 5V ID=20A

90
4V
80 8 125°C
3.5V

RDS(ON) (mΩ)
70

60 6
ID (A)

50

40 4 25°C
Vgs=3V
30

20 2

10

0 0
0 1 2 3 2 4 6 8 10

VDS (V) VGS (V)

Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature

6 2.2
ID=20A
2
5 VGS=10V
Normalized On-Resistance

VGS=4.5V 1.8
VGS=4.5V
4
1.6
RDS(ON) (mΩ)

VGS=10V
3 1.4

1.2
2
1

1 0.8
0 5 10 15 20 25 0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C)

Figure 5. Typical Transfer Characteristics Figure 6. Typical Source-Drain Diode Forward Voltage

20 1.E+02
VDS=5V

1.E+01
16 125°C

1.E+00
125℃ 25℃
25°C
12
1.E-01
IS (A)
ID(A)

1.E-02
8

1.E-03
4
1.E-04

0 1.E-05
1 1.5 2 2.5 3 3.5 4 0.3 0.5 0.7 0.9 1.1 1.3
VGS(V) VSD (V)

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 HGP045NE4SL P-4

Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Typical Capacitance vs. Drain-to-Source Voltage

10 10000

VDS=20V
ID=20A Ciss
8

Capacitance (pF)
1000
6
VGS (V)

Coss

4
100

2 Crss

0 10
0 10 20 30 40 50 0 10 20 30 40

Qg (nC) VDS (V)

Figure 9. Maximum Safe Operating Area Figure 10. Maximun Drain Current vs. Case Temperature

1000.0 140
Silicon Limited
10us
120
100.0 RDS(ON) limited

100us 100 Package Limited

Current rating ID(A)

10.0
1ms 80
DC
10ms
ID (A)

1.0 60
TJ(Max)=175°C
TC=25°C 40
0.1
20

0.0 0
0.01 0.1 1 10 100 1000 0 25 50 75 100 125 150 175

VDS (V) TCASE (℃)

Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Case

10
Duty=Ton/T
Peak TJ=TC+PDM.ZθJC.RθJC

RθJC=1.2℃/W
ZθJC Normalized Transient
Thermal Resistance

1
Duty=0.5

0.3

0.1
0.1
0.05

0.03

0.01
single pulse
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

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 HGP045NE4SL P-5

Inductive switching Test

Gate Charge Test

Uclamped Inductive Switching (UIS) Test

Diode Recovery Test

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 HGP045NE4SL P-6

Package Outline
TO-220, 3 leads

Dimentions in mm unless otherwise specified

Symbol Min Nom Max
A 9.66 9.97 10.28
A2 9.80 10.00 10.20
B 15.60 15.70 15.80
C 12.70 13.48 14.27
D 4.30 4.50 4.70
E 9.00 9.20 9.40
F 2.54
G1 1.32 1.52 1.72
G2 0.70 0.82 0.95
G3 0.45 0.52 0.60
H 3.50 3.60 3.70
I 2.70 2.80 2.90
J 15.70 15.97 16.25
K 2.20 2.40 2.60
L 1.15 1.27 1.40
N 6.40 6.60 6.80

Ver 1.0 Oct.2016